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- Page 1: ELECTRONIC AND STRUCTURAL PROPERTIE
- Page 6 and 7: vTable of ContentsAbstract………
- Page 8 and 9: 7.4 Electrical properties of rubren
- Page 10 and 11: 2the interface. For efficient charg
- Page 12: 4change the surface energy. The sur
- Page 15 and 16: 7A larger negative gate voltage ind
- Page 17 and 18: 9[46]. The charge transport mechani
- Page 19 and 20: 11double bonds of carbon-carbon bon
- Page 21 and 22: 131.3.2.1 PentaceneThe pentacene mo
- Page 23 and 24: 15rubrene molecule in the gas phase
- Page 25: 17[17] H. Ishii, K. Sugiyama, E. It
- Page 29 and 30: 21Chapter 2Channel Formation in Sin
- Page 31 and 32: 23This value was comparable to thos
- Page 33 and 34: 25The sheet resistance in the four-
- Page 35 and 36: 27representing mobility of pentacen
- Page 37 and 38: 29to 1.2 ML. After the coverage exc
- Page 39 and 40: 31trap density and the two dimensio
- Page 41 and 42: 33experiment. The drain current at
- Page 43 and 44: 35Increasing the pentacene coverage
- Page 45 and 46: 37(a)sheet conductance (1/Ω)2.5 10
- Page 47 and 48: 392.5(b)). The change in mobility a
- Page 49 and 50: 412.7 References[1] J. M. Shaw and
- Page 51 and 52: 43[33] J. Takeya, C. Goldmann, S. H
- Page 53 and 54: 45surface normal in the two phases.
- Page 55 and 56: 47next higher orbital. Each peak ca
- Page 57 and 58: 49Here, θ is the photon incidence
- Page 59 and 60: 51plane of the surface we would obs
- Page 61 and 62: 53deposited at a low deposition rat
- Page 63 and 64: 5521.5M B/M TF10.500.01 0.1 1Deposi
- Page 65 and 66: 57Chapter 4Functional Self-Assemble
- Page 67 and 68: 59Einμmol= N ( )(4.1)εε d0 molHe
- Page 69 and 70: 61Fig. 4.1 shows AFM images of an a
- Page 71 and 72: 63(a) (a)(b)Flourinated SAMPentacen
- Page 73 and 74: 65Debye and the length of the molec
- Page 75 and 76: 67the literature [24, 26]. The turn
- Page 77 and 78:
69form the conducting channel. A po
- Page 79 and 80:
71(a)(b)80-NH 2+C 60SAM60- drain cu
- Page 81 and 82:
732 10 -8 -20 0 20 40 60-drain curr
- Page 83 and 84:
75As summarized in Table 4.1, scan
- Page 85 and 86:
77drain voltage. The change in the
- Page 87 and 88:
79Pentacene thin films deposited on
- Page 89 and 90:
81[2] S. H. Kim, J. H. Lee, S. C. L
- Page 91 and 92:
83Chapter 5Self-assembled Dipolar C
- Page 93 and 94:
85Fig. 5.2: XPS spectra of function
- Page 95 and 96:
87In Fig. 5.4(b), the drain current
- Page 97 and 98:
89directions. In the scan from 50 V
- Page 99 and 100:
91reaction of the device in the DR1
- Page 101 and 102:
93100 V, the polarization of the DR
- Page 103 and 104:
95gate voltage can cause the photog
- Page 105 and 106:
97Chapter 6Ambipolar Rubrene Thin F
- Page 107 and 108:
99from the C-H bending bands (out o
- Page 109 and 110:
101the size of rubrene islands.6.2.
- Page 111 and 112:
103region is 0.67 based on the perc
- Page 113 and 114:
105three dimensional growth of rubr
- Page 115 and 116:
107(a)(b)0.000110 -80.0001210 -78 1
- Page 117 and 118:
109(a)(b)-1 10 -10 0-20 V-30 V-2 10
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111Phys. Rev. Lett. 93, 086602 (200
- Page 121 and 122:
113Chapter 7Enhanced Hole Mobility
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115(a)(b)SourceRubrenePolystyreneDr
- Page 125 and 126:
117(a)(b)Fig. 7.3: AFM image of rub
- Page 127 and 128:
119small average thickness play a v
- Page 129 and 130:
121electrodes is much smaller than