PhD thesis - Evans Research Group - University of Wisconsin-Madison
PhD thesis - Evans Research Group - University of Wisconsin-Madison
PhD thesis - Evans Research Group - University of Wisconsin-Madison
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22threshold voltage.The structural properties <strong>of</strong> polycrystalline pentacene layers can be correlated withcharge carrier mobility in OFETs [3, 7, 8]. A high degree <strong>of</strong> structural order in organicsemiconductors is required to achieve high field effect mobilities in OFETs. Stronginteractions between π orbitals between molecules found in well-ordered organicsemiconducting films can provide efficient carrier transport pathways in organicsemiconductors. A large number <strong>of</strong> studies have been focused on devices using thick films<strong>of</strong> organic semiconductors [9-11]. The effect <strong>of</strong> the grain boundary on the field effectmobility <strong>of</strong> carriers in polycrystalline organic films has been extensively studied. Inoligothiophene FETs, the mobility <strong>of</strong> holes increased linearly with grain size, which showsgrain boundaries can act as a bottle neck in transporting charges [12].Thick film devices, however, are not well suited to explore the charge transport layerbecause the layers above the accumulation layer add to the structural complexity <strong>of</strong> thepentacene layers without shedding any light on charge transport in devices.Chwang et al. studied electrical properties <strong>of</strong> single grains <strong>of</strong> sexithiophene as a function<strong>of</strong> the total thickness <strong>of</strong> the semiconductor film [13]. In these devices, the mobility <strong>of</strong>charge carriers was 10 -4 cm 2 /Vs, which is two orders <strong>of</strong> magnitude lower than typical thickfilm devices [14] and the thickness did not influence the mobility. They demonstrated thatthe sexithiophene FET is contact limited and this results in a large voltage drop at thecontact between gold and the sexithiophene film. Dinelli et al. showed that the mobility <strong>of</strong>holes in sexithienyl thin film transistors did not increase with increasing film thicknessafter the 2 nd molecular layer was completed [15]. The saturated mobility was 0.043 cm 2 /Vs.