40between the metal electrodes and the pentacene monolayers. The large difference betweenthe mobilities observed with two and four terminals shows that the vast majority <strong>of</strong> thetotal resistance was assigned to the contact resistance between metal and pentacene.Even though the second layer islands did not come into contact, the sheet conductanceand mobility increased with increased coverage. The second layer islands can contribute toelectrical charge transport by adding a parallel conduction path and locally reducing theresistance <strong>of</strong> areas covered by a second layer island. The improvement in the two-terminalmobility μ fet observed in two-terminal devices could be caused by either the largeimprovement in the channel mobility or, more likely, by improvements in the physicallyincomplete contact between the metal and the pentacene.2.6 ConclusionsWe have found that pentacene monolayer transistors are sensitive probes <strong>of</strong> the chargetransport in pentacene. Molecular layers <strong>of</strong> organic semiconductor can be incorporated intonumerous applications such as OLEDs and organic solar cells. The transport <strong>of</strong> carriers inthe layers can affect the performance <strong>of</strong> the device. Our system can be applied to study theelectrical properties <strong>of</strong> other organic semiconductor materials that could potentially beused as a charge transport layer in the devices. The effects <strong>of</strong> crystal structure andmorphology <strong>of</strong> organic semiconductors at low coverages grown under different depositionconditions on charge transport in organic semiconductors can be explored more precisely.
412.7 References[1] J. M. Shaw and P. F. Seidler, IBM J. Res. Dev. 45, 3 (2001).[2] C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).[3] J. Zaumseil and H. Sirringhaus, Chem. Rev. 107, 1296 (2007).[4] G. Horowitz, J. Mater. Res. 19, 1946 (2004).[5] T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).[6] M. Daraktchiev, A. von Mühlenen1, F. Nüesch, M. Schaer, M. Brinkmann, M. Bussac,and L. Zuppiroli, New J. <strong>of</strong> Phys. 7, 133 (2005).[7] D. Guo, S. Ikeda, K. Saiki, H. Miyazoe, and K Terashima, J. Appl. Phys. 99, 094502-1(2006).[8] D. M. DeLongchamp, S. Sambasivan, D. A. Fischer , E. K. Lin , P. Chang , A. R.Murphy , J. M. J. Fréchet, and V. Subramanian. Adv. Mater. 17, 2340 (2005).[9] J. Lee, J. H. Kim, and S. Im, J. Appl. Phys. 95, 3733 (2004).[10] J. Veres, S. Ogier, and G. Lloyd, Chem. Mater. 16, 4543 (2004).[11] R. J. Chesterfield, J. C. McKeen, C. R. Newman, C. D. Frisbie, P. C. Ewbank, K. R.Mann, and L. L. Miller, J. Appl. Phys. 95, 6396 (2004).[12] G. Horowitz and M. E. Hajlaoui, Adv. Mater. 12, 1046 (2000).[13] A. B. Chwang and C. D. Frisbie, J. Phys. Chem. B 104, 12202 (2000).[14] G. Horowitz, M. E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. 87, 4456 (2000).[15] F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. de Leeuw, Phys.Rev. Lett. 92, 116802 (2004).[16] C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
- Page 1: ELECTRONIC AND STRUCTURAL PROPERTIE
- Page 6 and 7: vTable of ContentsAbstract………
- Page 8 and 9: 7.4 Electrical properties of rubren
- Page 10 and 11: 2the interface. For efficient charg
- Page 12: 4change the surface energy. The sur
- Page 15 and 16: 7A larger negative gate voltage ind
- Page 17 and 18: 9[46]. The charge transport mechani
- Page 19 and 20: 11double bonds of carbon-carbon bon
- Page 21 and 22: 131.3.2.1 PentaceneThe pentacene mo
- Page 23 and 24: 15rubrene molecule in the gas phase
- Page 25 and 26: 17[17] H. Ishii, K. Sugiyama, E. It
- Page 27 and 28: 19[46] M. Vissenberg and M. Matters
- Page 29 and 30: 21Chapter 2Channel Formation in Sin
- Page 31 and 32: 23This value was comparable to thos
- Page 33 and 34: 25The sheet resistance in the four-
- Page 35 and 36: 27representing mobility of pentacen
- Page 37 and 38: 29to 1.2 ML. After the coverage exc
- Page 39 and 40: 31trap density and the two dimensio
- Page 41 and 42: 33experiment. The drain current at
- Page 43 and 44: 35Increasing the pentacene coverage
- Page 45 and 46: 37(a)sheet conductance (1/Ω)2.5 10
- Page 47: 392.5(b)). The change in mobility a
- Page 51 and 52: 43[33] J. Takeya, C. Goldmann, S. H
- Page 53 and 54: 45surface normal in the two phases.
- Page 55 and 56: 47next higher orbital. Each peak ca
- Page 57 and 58: 49Here, θ is the photon incidence
- Page 59 and 60: 51plane of the surface we would obs
- Page 61 and 62: 53deposited at a low deposition rat
- Page 63 and 64: 5521.5M B/M TF10.500.01 0.1 1Deposi
- Page 65 and 66: 57Chapter 4Functional Self-Assemble
- Page 67 and 68: 59Einμmol= N ( )(4.1)εε d0 molHe
- Page 69 and 70: 61Fig. 4.1 shows AFM images of an a
- Page 71 and 72: 63(a) (a)(b)Flourinated SAMPentacen
- Page 73 and 74: 65Debye and the length of the molec
- Page 75 and 76: 67the literature [24, 26]. The turn
- Page 77 and 78: 69form the conducting channel. A po
- Page 79 and 80: 71(a)(b)80-NH 2+C 60SAM60- drain cu
- Page 81 and 82: 732 10 -8 -20 0 20 40 60-drain curr
- Page 83 and 84: 75As summarized in Table 4.1, scan
- Page 85 and 86: 77drain voltage. The change in the
- Page 87 and 88: 79Pentacene thin films deposited on
- Page 89 and 90: 81[2] S. H. Kim, J. H. Lee, S. C. L
- Page 91 and 92: 83Chapter 5Self-assembled Dipolar C
- Page 93 and 94: 85Fig. 5.2: XPS spectra of function
- Page 95 and 96: 87In Fig. 5.4(b), the drain current
- Page 97 and 98: 89directions. In the scan from 50 V
- Page 99 and 100:
91reaction of the device in the DR1
- Page 101 and 102:
93100 V, the polarization of the DR
- Page 103 and 104:
95gate voltage can cause the photog
- Page 105 and 106:
97Chapter 6Ambipolar Rubrene Thin F
- Page 107 and 108:
99from the C-H bending bands (out o
- Page 109 and 110:
101the size of rubrene islands.6.2.
- Page 111 and 112:
103region is 0.67 based on the perc
- Page 113 and 114:
105three dimensional growth of rubr
- Page 115 and 116:
107(a)(b)0.000110 -80.0001210 -78 1
- Page 117 and 118:
109(a)(b)-1 10 -10 0-20 V-30 V-2 10
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111Phys. Rev. Lett. 93, 086602 (200
- Page 121 and 122:
113Chapter 7Enhanced Hole Mobility
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115(a)(b)SourceRubrenePolystyreneDr
- Page 125 and 126:
117(a)(b)Fig. 7.3: AFM image of rub
- Page 127 and 128:
119small average thickness play a v
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121electrodes is much smaller than