- Page 1: ELECTRONIC AND STRUCTURAL PROPERTIE
- Page 7 and 8: vi4.1 Introduction ……………
- Page 9 and 10: 1Chapter 1Introduction1.1 Organic/i
- Page 11 and 12: 3In addition, the surface propertie
- Page 14 and 15: 61.2.1 Device operationIt is import
- Page 16 and 17: 8flat band voltage in an OFET is op
- Page 18 and 19: 10The metal evaporation was followe
- Page 20 and 21: 12molecular weight. Organic semicon
- Page 22 and 23: 141.3.2.2 RubreneRubrene (C 42 H 28
- Page 24 and 25: 161.4 References[1] J. M. Shaw and
- Page 26 and 27: 18[31] R. W. Zehner, B. F. Parsons,
- Page 28 and 29: 201 (1994).[61] A. F. Hebard, M. J.
- Page 30 and 31: 22threshold voltage.The structural
- Page 32 and 33: 24microscopy (AFM).During the depos
- Page 34 and 35: 26In addition to these continuous m
- Page 36 and 37: 28Fig. 2.1: (a) Drain current and (
- Page 38 and 39: 30believed to result from impuritie
- Page 40 and 41: 32Fig. 2.2: Atomic force microscope
- Page 42 and 43: 34significantly lower than descendi
- Page 44 and 45: 36that the pentacene film was biase
- Page 46 and 47: 38Charge transport in the accumulat
- Page 48 and 49: 40between the metal electrodes and
- Page 50 and 51: 42[17] L. J. van der Pauw, Philips
- Page 52 and 53:
44Chapter 3Orientation of Pentacene
- Page 54 and 55:
46from the TEY results. The absorpt
- Page 56 and 57:
48Fig. 3.2: The NEXAFS spectrum fro
- Page 58 and 59:
50(a)(b)Fig. 3.3: The NEXAFS spectr
- Page 60 and 61:
52(a)(b)(c)(d)absorption intensity9
- Page 62 and 63:
54The other explanation for the dep
- Page 64 and 65:
56provide insight in relating trans
- Page 66 and 67:
58make donor-acceptor interfaces fo
- Page 68 and 69:
60(a)(b)200 nmFig. 4.1: AFM images
- Page 70 and 71:
62functionalized self assembled mon
- Page 72 and 73:
64the threshold voltage is due to t
- Page 74 and 75:
6610 -6 -60 -40 -20 0 20 40 60- dra
- Page 76 and 77:
68The attachment of C 60 molecules
- Page 78 and 79:
70For the pentacene FETs with C 60
- Page 80 and 81:
724.6 Gate electric field effect on
- Page 82 and 83:
743.5 10 -7 -20 0 20 40 60 803 10 -
- Page 84 and 85:
76saturated threshold voltage shift
- Page 86 and 87:
78of 10, 20 and 50 V in the dark be
- Page 88 and 89:
80The change in the growth of the p
- Page 90 and 91:
82[14] J. K. Mwaura, M. R. Pinto, D
- Page 92 and 93:
84DR19 was immobilized on the SiO 2
- Page 94 and 95:
86are 30 nm and 40 nm, respectively
- Page 96 and 97:
88(a)dark1 mW/cm 23 mW/cm 24.5 mW/c
- Page 98 and 99:
907060threshold voltage shift (V)50
- Page 100 and 101:
92∆U=-(µ DR19 )/(A DR19 ε 0 ε
- Page 102 and 103:
94We have found spectroscopic evide
- Page 104 and 105:
96[3] M. E. van der Boom, G. Evmene
- Page 106 and 107:
98We have studied the electrical pr
- Page 108 and 109:
100rubrene and SiO 2 substrate is l
- Page 110 and 111:
102The intensity of the peak in TEY
- Page 112 and 113:
104V1 2= π h (3r− h)(6.1)3The ra
- Page 114 and 115:
106drain current was observed for g
- Page 116 and 117:
108the current. The small contact a
- Page 118 and 119:
110to rubrene.The role of the Cr ad
- Page 120 and 121:
112H. Friend, Nature, 434, 194 (200
- Page 122 and 123:
114There have been attempts in seve
- Page 124 and 125:
116(a)(b)Fig. 7.2: (a) AFM image of
- Page 126 and 127:
118Seth King of Paul Lyman’s grou
- Page 128 and 129:
120(a)(b)10 -6 00.00050.0003- drain
- Page 130:
122[2] S. Seo, B. N. Park, and P. G