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PhD thesis - Evans Research Group - University of Wisconsin-Madison

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32Fig. 2.2: Atomic force microscope images <strong>of</strong> pentacene island formation on SiO 2substrates at pentacene coverages <strong>of</strong> (a) 0.30 ML, (b) 0.60 ML, (c) 0.75 ML, (d) 0.92 ML,(e) 1.15 ML, and (f) 1.24 ML.The heights <strong>of</strong> the islands are 1.58±0.06 nm. These heights are measured using linescans from the AFM images. This value is comparable to the interplanar spacing <strong>of</strong>pentacene molecules grown on SiO 2 , where pentacene molecules are slightly inclined withrespect to the normal <strong>of</strong> the substrate. In XRD experiments interplanar spacing <strong>of</strong> thesingle crystal pentacene was 14.5 Å. For pentacene films deposited in vacuum the heightwas 15.4 Å [26-28].The charge transport in the submonolayer regime was studied by analyzing the currentvoltagecharacteristic curves at two submonolayer coverages (0.72 ML, 0.9 ML), duringpauses in the deposition. The results <strong>of</strong> the electrical measurements are shown in Fig. 2.3.Figure 2.3(a) shows the drain current as a function <strong>of</strong> pentacene coverage during this

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