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kerf-free wafering - Avsusergroups.org

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SiGen’s Novel Solution: PolyMaxIon ImplantationInitiation and PropagationCleaved Wafer20-150μm• A two-step process:1. Implant light ions into c-Si shaped brick• Form sub-surface cleave layer• Implant small initiation area with higher dose2. Controlled Cleave with energy beam• Initiate cleave in high dose area• Propagate crack across brick area to release wafer• Repeat on newly exposed brick surface©2011 Silicon Genesis Corporation. All rights reserved NCCAVS Joint User Group Meeting - On Photovoltaic Technologies

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