Characterization of vacancy-type defects in silicon using deep level ...

III. Definition of tasks• Determine the energy position and electron capture cross section of the dominant electronstates in the energy band gap of proton-irradiated high purity epitaxial silicon (n-type)• Determine the concentration and generation rate of the dominant electron states as afunction of proton dose• On the basis of comparison with literature data, identify the origin of the dominantelectron states• Perform isothermal annealing studies to determine the thermal stability and annealingkinetics of the dominant electron states• Conclude about the radiation hardness of the investigated samples (devices/detectors) andpossibly predict their lifetime in (i) the Large Hadron Collider (LHC) at CERN and (ii) asatellite exposed to the Van Allen radiation belt.IV. References[1] B.G. Streetman and S. Banerjee, Solid State Electronic Devices, Prentice HallInternational Inc., 6 th edition (2006).[2] See for example, M. Mikelsen, Thermal evolution of irradiation induced defects in Siliconand Silicon Carbide, PhD thesis, University of Oslo (2007), and references therein.[3] J.W. Corbett, G.D. Watkins, R.M. Chrenko and R.S. McDonald, Phys. Rev. 121, 1015(1961); G.D. Watkins and J.W. Corbett, Phys. Rev. 121, 1001 (1961).[4] J.W. Corbett and G.D. Watkins, Phys. Rev. Lett. 7, 314 (1961); G.D. Watkins and J.W.Corbett, Phys. Rev. 138, A543 (1965).[5] W. Shockley and W.T. Read, Phys. Rev 87, 835 (1952).[6] D.V. Lang, J. Appl. Phys. 45, 3023 (1974).[7] Institute of Electronic Materials Technology (ITME), Warszaw, Poland.12