Characterization of vacancy-type defects in silicon using deep level ...

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Hence, the capacitance after removing the pulse becomesC (t) =AεqN2Veffdr= Aεq(Nd− n2VrT( t))and assuming N
In reality, the procedure outlined in Figure 9 for extracting the DLTS signal is rather sensitiveto noise in the capacitance measurements and instead, a sampling (weighting) function, w(t) ,of the type shown in Figure 10 is frequently used. This sampling function is of lock-in typeand the DLTS signal, S(t i ), is deduced according toS(t i ) =1tit + td∫tdiΔC(t)w(t)dtwhere t d is a delay time of the capacitance meter. For t d
Page 1 and 2: Department of Physicshttp://www.uio
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Page 7: In accordance with section I.(b), l
Page 11 and 12: II.(c) Instrumentation for the meas

Characterization of vacancy-type defects in silicon using deep level ...

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