BPY 62 NPN-Silizium-Fototransistor Silicon NPN Phototransistor ...

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BPY 62Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischenZiffern gekennzeichnet.The phototransistors are grouped according to their spectral sensitivity and distinguishedby arabian figures.BezeichnungDescriptionSymbolSymbolWertValueEinheitUnit-2 -3 -4 -5Fotostrom, λ = 950 nmPhotocurrentE e = 0.5 mW/cm 2 , V CE = 5 VE v = 1000 Ix, Normlicht/standard lightA,V CE = 5 VI PCE 0.5 ... 1.0I PCE 3.00.8 ... 1.64.61.25 ... 2.57.2≥ 2.011.4mAmAAnstiegszeit/AbfallzeitRise and fall timeI C = 1 mA, V CC = 5 V, R L = 1 kΩt r , t f 5 7 9 12 µsKollektor-Emitter-SättigungsspannungCollector-emitter saturation voltageI C = I 1) PCEmin × 0.3,E e = 0.5 mW/cm 2 V CEsat 150 150 160 180 mVStromverstärkungCurrent gainE e = 0.5 mW/cm 2 , V CE = 5 VI PCE 170 270 420 670I PCB1)1)I PCEmin ist der minimale Fotostrom der jeweiligen GruppeI PCEmin is the min. photocurrent of the specified groupSemiconductor Group 241
BPY 62Relative spectral sensitivityS rel = f (λ)PhotocurrentI PCE = f (E e ), V CE = 5 VTotal power dissipationP tot = f (T A )Output characteristicsI C = f (V CE ), I B = ParameterOutput characteristicsI C = f (V CE ), I B = ParameterDark currentI CEO = f (V CE ), E = 0PhotocurrentI PCE /I PCE25o= f (T A ), V CE = 5 VDark currentI CEO /I CEO25 o = f (T A ), V CE = 25 V, E = 0Collector-emitter capacitanceC CE = f (V CE ), f = 1 MHz, E = 0Semiconductor Group 242
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BPY 62 NPN-Silizium-Fototransistor Silicon NPN Phototransistor ...

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