radiation effects in sige devices - Institute for Space and Defense ...

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Scaling Effects ΔI B /I B0 has a near-linear (D 1 ) dose dependence Thinner BE-spacer + raised extrinsic base smaller ΔI B /I B0 Similar trends for ΔI B /I B0 at J C =1 µA/µm 2 and V BE =0.6 V5AM & 7HP8HP & 9TJohn D. Cressler, 5/25/10 12
Temperature Dependence Hole transport slowed at 77 K increase in self trapping Oxide trapped charge increases and interface traps decreaseJohn D. Cressler, 5/25/10 13
Page 1 and 2: Radiation Effects inSiGe DevicesSta
Page 3 and 4: SiGe Strain EngineeringThe Bright I
Page 6 and 7: EE Electronics Space-Based Electron
Page 8 and 9: TID Damage MechanismsPrimary Damage
Page 10 and 11: TID Damage (Forward-mode) G/R traps
Page 14 and 15: SiGe TID Summary SiGe HBTs are inhe
Page 16 and 17: Single Event Effects• Observed SE
Page 18 and 19: TRIBICC Measurements• Directly Ca
Page 20 and 21: Outline• SiGe HBT Technology & Ex
Page 22 and 23: NRING IBICC Results• Charge Colle
Page 24 and 25: Exterior Transients• Transients I
Page 26 and 27: Circuit Implications• Digital vs.
Page 28 and 29: Microbeam Results• Two Distinguis
Page 30 and 31: Shift Register Simulations• Model
Page 32 and 33: Modeling & Measurement• IMC with
Page 34 and 35: Digital CircuitsSimple device modif
Page 36 and 37: Circuit SET Modeling• Approaches
Page 38 and 39: SET in a SiGe BGR• Transient resp
Page 40 and 41: Mixed-mode vs. Spectre• Schematic
Page 42 and 43: Publications2009 Papers[1] A. Appas
Page 44 and 45: PublicationsMore 2009 Papers[14] M.

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