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radiation effects in sige devices - Institute for Space and Defense ...

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Progress & PlansNo-cost Extension Granted to 8/31/10Cont<strong>in</strong>ue Our Exploration of Device-level SiGe Harden<strong>in</strong>g• Near-term broadbeam heavy ion experiment planned- Inverse-mode cascode shift registers- SiGe on SOI shift registers• Characterization of self-heat<strong>in</strong>g <strong>effects</strong> <strong>in</strong> SiGe on SOI - new Agilent pulse-mode measurement system will support this• Cont<strong>in</strong>ue to <strong>in</strong>vestigate device-circuit <strong>in</strong>teractions (mixed-signal)• Cont<strong>in</strong>ue to hone TCAD <strong>for</strong> address<strong>in</strong>g circuit response Much Learned! ….. Much to be Done Still!Wish List – a follow-on MURI – h<strong>in</strong>t, h<strong>in</strong>t!John D. Cressler, 5/25/10 41

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