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TID Damage MechanismsPrimary Damage Source Ionization Damage Charged particles + photons Oxide charging + interface traps- EB Spacer & STI FETs: V T shifts, leakage HBTs: I B leakage, circuit bias shiftSecondary Damage Source Displacement Damage Neutral + charged particles Vacancies + interstitials Dopant de-activationJohn D. Cressler, 5/25/10 8
IBM Technology NodesTechnology Node Peak f T (GHz) Peak f MAX (GHz) BV CEO (V) W E (µm) 1 st -generation (5AM) 50 70 3.3 0.52 nd -generation (7HP) 120 100 2.5 0.23 rd -generation (8HP) 207 285 1.7 0.124 th -generation (9T) 350 307 1.2 0.125AM & 7HP 8HP & 9T[5] D.C. Ahlgren et. al., in Proc. IEEE BCTM pp. 143-46, 2001. [6] B. Jagannathan et. al., IEEE EDL , vol. 23, no. 5, pp. 258-60, May 2002.John D. Cressler, 5/25/10 9
Page 1 and 2: Radiation Effects inSiGe DevicesSta
Page 3 and 4: SiGe Strain EngineeringThe Bright I
Page 6 and 7: EE Electronics Space-Based Electron
Page 10 and 11: TID Damage (Forward-mode) G/R traps
Page 12 and 13: Scaling Effects ΔI B /I B0 has a n
Page 14 and 15: SiGe TID Summary SiGe HBTs are inhe
Page 16 and 17: Single Event Effects• Observed SE
Page 18 and 19: TRIBICC Measurements• Directly Ca
Page 20 and 21: Outline• SiGe HBT Technology & Ex
Page 22 and 23: NRING IBICC Results• Charge Colle
Page 24 and 25: Exterior Transients• Transients I
Page 26 and 27: Circuit Implications• Digital vs.
Page 28 and 29: Microbeam Results• Two Distinguis
Page 30 and 31: Shift Register Simulations• Model
Page 32 and 33: Modeling & Measurement• IMC with
Page 34 and 35: Digital CircuitsSimple device modif
Page 36 and 37: Circuit SET Modeling• Approaches
Page 38 and 39: SET in a SiGe BGR• Transient resp
Page 40 and 41: Mixed-mode vs. Spectre• Schematic
Page 42 and 43: Publications2009 Papers[1] A. Appas
Page 44 and 45: PublicationsMore 2009 Papers[14] M.

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