radiation effects in sige devices - Institute for Space and Defense ...

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SiGe Success Story• Unconditionally Stable, UHV/CVD SiGe Epitaxial Base• SiGe = SiGe HBT + Si CMOS for Highly Integrated Solutions• 100% Si Manufacturing Compatibility• Rapid Generation Evolution Incorporating C-SiGe Processes4 th 3 rd 1 st 2 nd SiGe = III-V Speed + Si ManufacturingWin-Win!50 nmGe(x)John D. Cressler, 5/25/10 4
Page 1 and 2: Radiation Effects inSiGe DevicesSta
Page 3: SiGe Strain EngineeringThe Bright I
Page 7 and 8: Outline• SiGe HBT Technology & Ex
Page 9 and 10: IBM Technology NodesTechnology Node
Page 11 and 12: ac Performance Metrics No change in
Page 13 and 14: Temperature Dependence Hole transpo
Page 17 and 18: SEE Experiments• Traditionally, I
Page 19 and 20: TRIBICC Board Designs• Board Desi
Page 21 and 22: N-Ring SiGe HBTs• Competing N+ Ju
Page 23 and 24: NRING TRIBICC Results• TRIBICC Sh
Page 25 and 26: 3-D TCAD Simulations• Transient c
Page 27 and 28: SOI vs. Bulk Platforms• SOI (Buri
Page 29 and 30: TRIBICC Measurements36-MeV Oxygen I
Page 31 and 32: Inverse-Mode CascodeDe-couple sensi
Page 33 and 34: Biasing the C-TapSolution: Capaciti
Page 37 and 38: SET in a SiGe BGR• Bandgap voltag
Page 39 and 40: True Mixed-mode SET• CFDRC MixCad
Page 41 and 42: Progress & PlansNo-cost Extension G
Page 43 and 44: PublicationsMore 2009 Papers[8] R.M
Page 45: PublicationsMore 2010 Papers[20] S.

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