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radiation effects in sige devices - Institute for Space and Defense ...

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Circuit SET Model<strong>in</strong>g• Approaches to simulat<strong>in</strong>g circuit SET:1. Inject analytical double exponential transient 2. Inject computed 3D TCAD transients at “worst-case” biases3. Inject computed 3D TCAD transients at circuit nodal biases4. Full mixed-mode simulation (3D TCAD with<strong>in</strong> Spectre)• Under what conditions will these diverge?‒ Spectre-only simulations will not always capture real SET‒ Full mixed-mode can capture feedback <strong>effects</strong>‒ Depends on temp., bias, circuit topology, analog vs. RF…Key: Need to validate simulations aga<strong>in</strong>stmeasured dataJohn D. Cressler, 5/25/10 36

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