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TFDU4203 Integrated Low Profile Transceiver Module for Telecom ...

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<strong>TFDU4203</strong>Vishay SemiconductorsOptoelectronic CharacteristicsReceiverTested <strong>for</strong> the following parameters (V CC = 2.4 V to 5.5 V, - 25 °C to + 85 °C, unless otherwise stated).Parameter Test Conditions Symbol Min Typ. Max UnitMinimum detection thresholdirradiance (logic high receiverinput irradiance)Maximum detection thresholdirradiance| α | ≤ ± 15 °,V CC = 2.0 V to 5.5 VE e, min 25(2.5)50(5)mW/m 2(µW/cm 2 )2.0 V, 25 °C tested E e, min 50 100 mW/m 2| α | ≤ ± 90 °, V CC = 5 V E e, max 3300(330)| α | ≤ ± 90 °, V CC = 3 V E e, max 8000(800)5000(500)15000(1500)W/cm 2(µW/cm 2 )W/cm 2(µW/cm 2 )Logic low receiver inputirradianceE e, max,low 4(0.4)mW/m 2(µW/cm 2 )Output voltage RXD active, C = 15 pF V OL 0 0.5 Vnon active, C = 15 pF V OH V CC - 0.5 VOutput current RXD V OL < 0.5 V 4 mARise time at load C = 15 pF, R = 2.2 kΩ t r 20 70 nsFall time at load C = 15 pF, R = 2.2 kΩ t f 20 70 nsRxd signal electrical outputpulse widthOutput delay time (RXD),leading edge optical input toelectrical outputJitter, leading edge of outputsignalOutput delay time (RXD), trailingedge optical input to electricaloutput2.4 kbit/s, input pulse width1.41 µs to 3/16 of bit duration115.2 kbit/s, input pulse width1.41 µs to 3/16 of bit durationt p 1.41 20 µst p 1.41 4.5 µsoutput level =t dl 1 2 µs0.5 x V CC at 40 mW/m 2over a period of 10 bit,115.2 kbit/st j 400 nsoutput level =t dt 6.5 µs0.5 x V CC at 40 mW/m 2Power on time, SD recovery0.1 1 mstimeLatency t L 100 200 µsDocument Number 82542Rev. 1.6, 04-Oct-06www.vishay.com197

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