Diplomarbeit Diplom-Ingenieur - Institut für Halbleiter
Diplomarbeit Diplom-Ingenieur - Institut für Halbleiter
Diplomarbeit Diplom-Ingenieur - Institut für Halbleiter
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and increases the height of the PbTe material lines. The increase of the local layer<br />
thickness can be seen in Fig. 4.2. The image shows a cross-sectional specimen of an<br />
originally 5nm epi-layer sample. The PbTe wires contracts until the thickness of the<br />
Figure 4.2: BF TEM image of an annealed PbTe layer recorded slightly away from the<br />
[110] zone axis on a cross sectional specimen of series #31. Growth direction was along<br />
the [001] axis. The sample was originally a 5 nm SQW and was annealed at 320°C for<br />
10min, which was not sufficient for complete precipitation. The sample contains still<br />
interconnected 2D part with a height form 5 to 20 nm. The lateral dimension shrinks for<br />
thicker layers. Dot-shaped material with sharp interfaces can be seen in the 20 nm layer.<br />
Figure 4.3: Images of several constrictions of the PbTe wires during the dot<br />
precipitation. The images were recorded on a cross section specimen of series #5, as-<br />
grown sample. (a) shows a DF image, (b) and (c) show BF images. The layer was<br />
originally 5nm thick. The dot material already shows sharp interface to the host material.<br />
The shape of the separated material shows larger in-plane dimensions than height.