EPC GaN Transistor Application Readiness Phase One Testing Standard relatively
EPC GaN Transistor Application Readiness: Phase One Testing
EPC GaN Transistor Application Readiness: Phase One Testing
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RELIABILITY REPORT<br />
<strong>Phase</strong> <strong>One</strong> <strong>Testing</strong><br />
Appendix V: HTGB @ 125˚C<br />
<strong>EPC</strong>1001 HTGB 6 V at 125˚C<br />
Normalized RDS(ON)<br />
HTGB 6 V <strong>EPC</strong>1001 R DS(ON) vs. Stress Time<br />
2.0<br />
1.8<br />
1.6<br />
1.4<br />
1.2<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
0.0<br />
1 10 100 1000<br />
Stress Hours<br />
IGSS @ 5 V (µA)<br />
HTGB 6 V <strong>EPC</strong>1001 I GSS @ 5 V vs. Stress Time<br />
5000<br />
4500<br />
4000<br />
3500<br />
3000<br />
2500<br />
2000<br />
1500<br />
1000<br />
500<br />
0<br />
1 10 100 1000<br />
Stress Hours<br />
Normalized VTH<br />
HTGB 6 V <strong>EPC</strong>1001 V TH vs. Stress Time<br />
2.0<br />
1.8<br />
1.6<br />
1.4<br />
1.2<br />
1.0<br />
0.8<br />
0.6<br />
0.4<br />
0.2<br />
0.0<br />
1 10 100 1000<br />
Stress Hours<br />
IDSS @ 100 V (µA)<br />
HTGB 6 V <strong>EPC</strong>1001 I DSS vs. Stress Time<br />
300<br />
250<br />
200<br />
150<br />
100<br />
50<br />
0 1 10 100 1000<br />
Stress Hours<br />
<strong>EPC</strong> – EFFICIENT POWER CONVERSION CORPORATION | WWW.<strong>EPC</strong>-CO.COM | COPYRIGHT 2011 | | PAGE 12
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