RF Power LDMOS Transistor

P3dB - TYPICAL CARRIER SIDE LOAD PULL CONTOURS — 1840 MHz
IMAGINARY ()
–1
–1.5
–2
50.5
–2.5
E
51
–3
51.5
–3.5
P
53 52.5 52
–4
49.5
50
–4.5
–5
0.5 1 1.5 2 2.5 3 3.5
REAL ()
Figure 12. P3dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
–1
–1.5
–2
72 70
–2.5
E
68
–3
66
–3.5
P
64
–4
62
–4.5
60
56 58
–5
0.5 1 1.5 2 2.5 3 3.5
REAL ()
Figure 13. P3dB Load Pull Efficiency Contours (%)
66
–1
–1.5
–2
20.5
–1
–1.5
–2
–30
–28
–20
–26 –24 –22
–18
IMAGINARY ()
–2.5
–3
–3.5
–4
–4.5
P
16.5
17
17.5
E
18.5
18
20
19.5
19
IMAGINARY ()
–2.5
–3
–3.5
–4
–4.5
P
E
–14
–16
–5
0.5 1 1.5 2 2.5 3 3.5
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
–5
0.5 1 1.5 2 2.5 3 3.5
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
A2T18H410 -24SR6
10
RF Device Data
Freescale Semiconductor, Inc.