RF Power LDMOS Transistor

P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 1840 MHz
0
–1
51
0
–1
62
IMAGINARY ()
51.5
–2
52
E 52.5
–3
53
P
54.5 54 53.5
–4
55
–5
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
REAL ()
Figure 16. P1dB Load Pull Output Power Contours (dBm)
IMAGINARY ()
–2
68
E
66
–3
64 62
P
–4
60
58
54
–5
56 58
56
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
REAL ()
Figure 17. P1dB Load Pull Efficiency Contours (%)
0
0
IMAGINARY ()
–1
–1
18
–28
–44
–2
–2
17.5
17
–42
E
–30
E
–3
–3
–40
16.5
P
P
–38
–4
–4
15
15.5
16
16
–34
–36
–32
–5
–5
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
REAL ()
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
Figure 19. P1dB Load Pull AM/PM Contours ()
IMAGINARY ()
NOTE:
P
E
= Maximum Output Power
= Maximum Drain Efficiency
RF Device Data
Freescale Semiconductor, Inc.
A2T18H410 -24SR6
11