RF Power LDMOS Transistor
1MmmaC4
1MmmaC4
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TYPICAL CHARACTERISTICS<br />
G ps , POWER GAIN (dB)<br />
22<br />
20<br />
18<br />
16<br />
V DD =28Vdc,I DQA = 800 mA, V GSB =0.8Vdc<br />
Single--Carrier W--CDMA<br />
1805 MHz<br />
G ps<br />
1880 MHz<br />
1840 MHz<br />
1805 MHz<br />
1840 MHz<br />
1805 MHz<br />
1880 MHz<br />
14<br />
20<br />
1880 MHz<br />
1840 MHz<br />
12<br />
10<br />
3.84 MHz Channel Bandwidth, Input Signal<br />
10<br />
PAR = 9.9 dB @ 0.01% Probability on CCDF<br />
0<br />
1<br />
10 100 500<br />
P out , OUTPUT POWER (WATTS) AVG.<br />
Figure 6. Single -Carrier W -CDMA <strong>Power</strong> Gain, Drain<br />
Efficiency and ACPR versus Output <strong>Power</strong><br />
D<br />
ACPR<br />
60<br />
50<br />
40<br />
30<br />
D , DRAIN EFFICIENCY (%)<br />
0<br />
–10<br />
–20<br />
–30<br />
–40<br />
–50<br />
–60<br />
ACPR (dBc)<br />
22<br />
20<br />
18<br />
Gain<br />
GAIN (dB)<br />
16<br />
14<br />
12<br />
V DD =28Vdc<br />
P in =0dBm<br />
I DQA = 800 mA<br />
V GSB =0.8Vdc<br />
10<br />
1600 1680 1760 1840 1920 2000 2080 2160 2240<br />
f, FREQUENCY (MHz)<br />
Figure 7. Broadband Frequency Response<br />
A2T18H410 -24SR6<br />
6<br />
<strong>RF</strong> Device Data<br />
Freescale Semiconductor, Inc.
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