RF Power LDMOS Transistor

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R1 Z1 C1 D68602 A2T18H410 Rev. 4 C7 V DDA C3 C5 V GGB C2 C8 R2 C4 C6 R3 CUT OUT AREA C9 C14 C10 C11 C12 C13 C19 C15 C16 C17 C18 V DDB V DDA Figure 2. A2T18H410 -24SR6 Test Circuit Component Layout Table 6. A2T18H410 -24SR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C7, C9, C14, C16, C19 10 uF Chip Capacitors C5750X7S2A106M230KB TDK C2, C8, C10, C15 12 pF Chip Capacitors ATC100B120JT500XT ATC C3 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C4, C6 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC C5, C11 1.0 pF Chip Capacitors ATC100B1R0CT500XT ATC C12 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C13 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC C17, C18 470 uF, 63 V Electrolytic Capacitors MCGPR63V477M13X26 Multicomp R1 50 Termination CW12010T0050GBK ATC R2, R3 2.7 , 1/4 W Chip Resistors CRCW12062R7FKEA Vishay Z1 1700–2000 MHz Band, 5 dB Directional Coupler X3C19P1-05S Anaren PCB Rogers RO4350B, 0.020, r =3.66 D68602 MTL A2T18H410 -24SR6 4 RF Device Data Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS 17.8 56 V DD =28Vdc,P out =71W(Avg.),I DQA = 800 mA 17.7 V GSB = 0.8 Vdc, Single--Carrier W--CDMA, 3.84 MHz 54 17.6 Channel Bandwidth, Input Signal PAR = 9.9 dB @ 52 D 0.01% Probability on CCDF 17.5 50 17.4 G ps 48 17.3 17.2 17.1 17 PARC –27 –30 –33 –36 –1.4 –1.6 –1.8 –2 16.9 ACPR –39 –2.2 16.8 –42 –2.4 1760 1780 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Figure 3. Single -Carrier Output Peak -to -Average Ratio Compression (PARC) Broadband Performance @ P out = 71 Watts Avg. G ps , POWER GAIN (dB) D , DRAIN EFFICIENCY (%) ACPR (dBc) PARC (dB) IMD, INTERMODULATION DISTORTION (dBc) –10 –20 –30 –40 –50 –60 V DD =28Vdc,P out = 8 W (PEP), I DQA = 800 mA V GSB = 0.8 Vdc, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz IM3--U IM5--U IM7--L IM3--L IM5--L IM7--U –70 1 10 100 500 TWO--TONE SPACING (MHz) Figure 4. Intermodulation Distortion Products versus Two -Tone Spacing G ps , POWER GAIN (dB) 17.8 17.6 17.4 17.2 17 16.8 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 1 0 –1 –2 –3 –4 –1 dB = 55 W D ACPR V DD =28Vdc,I DQA = 800 mA, V GSB =0.8Vdc f = 1840 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth –2 dB = 78.1 W –3 dB = 100 W PARC G ps 60 55 50 45 40 35 D DRAIN EFFICIENCY (%) –30 –32 –34 –36 –38 –40 ACPR (dBc) 16.6 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF –5 30 25 50 75 100 125 150 P out , OUTPUT POWER (WATTS) Figure 5. Output Peak -to -Average Ratio Compression (PARC) versus Output Power –42 RF Device Data Freescale Semiconductor, Inc. A2T18H410 -24SR6 5
Page 1 and 2: Freescale Semiconductor Technical D
Page 3: Table 4. Electrical Characteristics
Page 7 and 8: Table 7. Carrier Side Load Pull Per
Page 9 and 10: P1dB - TYPICAL CARRIER SIDE LOAD PU
Page 11 and 12: P1dB - TYPICAL PEAKING LOAD PULL CO
Page 13 and 14: PACKAGE DIMENSIONS RF Device Data F
Page 15 and 16: PRODUCT DOCUMENTATION, SOFTWARE AND

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