WEARABLE/IMPLANTABLE

SESSION 7
Tuesday February 2 nd , 8:30 AM
Nonvolatile Memory Solutions
Session Chair: Sungdae Choi, SK hynix, Icheon, Korea
Associate Chair: Jin-Man Han, Samsung Electronics, Hwaseong, Korea
8:30 AM
7.1 256Gb 3b/Cell V-NAND Flash Memory with 48 Stacked WL Layers
D. Kang, W. Jeong, C. Kim, D-H. Kim, Y. S. Cho, K-T. Kang, J. Ryu, K-M. Kang, S. Lee, W. Kim,
H. Lee, J. Yu, N. Choi, D-S. Jang, J-D. Ihm, D. Kim, Y-S. Min, M-S. Kim, A-S. Park, J-I. Son,
I-M. Kim, P. Kwak, B-K. Jung, D-S. Lee, H. Kim, H-J. Yang, D-S. Byeon, K-T. Park, K-H. Kyung,
J-H. Choi, Samsung Electronics, Hwaseong, Korea
9:00 AM
7.2 4Mb STT-MRAM-Based Cache with Memory-Access-Aware Power
DS1 Optimization and Write-Verified-Write / Read-Modified-Write Scheme
H. Noguchi 1 , K. Ikegami 1 , S. Takaya 1 , E. Arima 2 , K. Kushida 1 , A. Kawasumi 1 , H. Hara 1 , K. Abe 1 ,
N. Shimomura 1 , J. Ito 1 , S. Fujita 1 , T. Nakada 2 , H. Nakamura 2
1
Toshiba, Kawasaki, Japan; 2 University of Tokyo, Tokyo, Japan
9:30 AM
7.3 A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw
BER by Over 100× for Storage-Class Memory Applications
W-S. Khwa 1,2 , M-F. Chang 2 , J-Y. Wu 1 , M-H. Lee 1 , T-H. Su 1,3 , K-H. Yang 3 , T-F. Chen 3 , T-Y. Wang 1 ,
H-P. Li 1 , M. BrightSky 4 , S. Kim 4 , H-L. Lung 1 , C. Lam 4
1
Macronix International, Hsinchu, Taiwan; 2 National Tsing Hua University, Hsinchu, Taiwan
3
National Chiao Tung University, Hsinchu, Taiwan
4
IBM T. J. Watson Reseach Center, Yorktown Heights, NY
Break 10:00 AM
10:15 AM
7.4 A 256b-Wordlength ReRAM-Based TCAM with 1ns Search Time and
14× Improvement in FOM Using 2.5T1R Cell and Region-Splitter
Sense Amplifier
C-C. Lin 1,2 , J-Y. Hung 1 , W-Z. Lin 1 , C-P. Lo 1 , Y-N. Chiang 1 , H-J. Tsai 3 , G-H. Yang 3 , Y-C. King 1 ,
C. J. Lin 1 , T-F. Chen 3 , M-F. Chang 1
1
National Tsing Hua University, Hsinchu, Taiwan; 2 TSMC, Hsinchu, Taiwan
3
National Chiao Tung University, Hsinchu, Taiwan
10:45 AM
7.5 A 128Gb 2b/cell NAND Flash Memory in 14nm Technology with
t PROG =640μs and 800Mb/s I/O Rate
S. Lee, J-Y. Lee, I-H. Park, J. Park, S-W. Yun, M-S. Kim, J-H. Lee, M. Kim, K. Lee, T. Kim,
B. Cho, D. Cho, S. Yun, J-N. Im, H. Yim, K-H. Kang, S. Jeon, S. Jo, Y-L. Ahn, S-M. Joe,
S. Kim, D-K. Woo, J. Park, H-W. Park, Y. Kim, J. Park, Y. Choi, M. Hirano, J-D. Ihm,
B. Jeong, S-K. Lee, M. Kim, H. Lee, S. Seo, H. Jeon, C-H. Kim, H. Kim, J. Kim, Y. Yim,
H. Kim, D-S. Byeon, H-J. Yang, K-T. Park, K-H. Kyung, J-H. Choi
Samsung Electronics, Hwaseong, Korea
11:15 AM
7.6 A 90nm Embedded 1T-MONOS Flash Macro for Automotive
Applications with 0.07mJ/8kB Rewrite Energy and Endurance Over
100M Cycles Under T j of 175°C
H. Mitani 1 , K. Matsubara 1 , H. Yoshida 1 , T. Hashimoto 2 , H. Yamakoshi 2 , S. Abe 2 , T. Kono 1 ,
Y. Taito 1 , T. Ito 1 , T. Krafuji 1 , K. Noguchi 1 , H. Hidaka 1 , T. Yamauchi 1
1
Renesas Electronics, Kodaira, Japan; 2 Renesas Electronics, Hitachinaka, Japan
11:45 AM
7.7 A 768Gb 3b/cell 3D-Floating-Gate NAND Flash Memory
T. Tanaka 1 , M. Helm 2 , T. Vali 3 , R. Ghodsi 2 , K. Kawai 1 , J-K. Park 2 , S. Yamada 1 , F. Pan 2 , Y. Einaga 1 ,
A. Ghalam 2 , T. Tanzawa 1 , J. Guo 2 , T. Ichikawa 1 , E. Yu 2 , S. Tamada 1 , T. Manabe 1 , J. Kishimoto 1 ,
Y. Oikawa 1 , Y. Takashima 1 , H. Kuge 1 , M. Morooka 1 , A. Mohammadzadeh 2 , J. Kang 2 , J. Tsai 2 ,
E. Sirizotti 3 , E. Lee 2 , L. Vu 2 , Y. Liu 2 , H. Choi 2 , K. Cheon 2 , D. Song 2 , D. Shin 2 , J. H. Yun 2 ,
M. Piccardi 2 , K-F. Chan 2 , Y. Luthra 2 , D. Srinivasan 2 , S. Deshmukh 2 , K. Kavalipurapu 2 , D. Nguyen 2 ,
G. Gallo 3 , S. Ramprasad 2 , M. Luo 2 , Q. Tang 2 , M. Incarnati 3 , A. Macerola 3 , L. Pilolli 3 ,
L. De Santis 3 , M. Rossini 3 , V. Moschiano 3 , G. Santin 3 , B. Tronca 3 , H. Lee 2 , V. Patel 2 , T. Pekny 2 ,
A. Yip 2 , N. Prabhu 4 , P. Sule 4 , T. Bemalkhedkar 4 , K. Upadhyayula 4 , C. Jaramillo 4
1
Micron, Tokyo, Japan; 2 Micron, Milpitas, CA; 3 Micron, Avezzano, Italy; 4 Intel, Folsom, CA
Conclusion 12:15 PM
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