EC6201_uw

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where I – diode current I o – diode reverse saturation current at room temperature V – external voltage applied to the diode Ƞ - a constant, 1 for Ge and 2 for Si V T = kT/q = T/11600, thermal voltage K – Boltzmann‘s constant (1.38066x10^-23 J/K) q – charge of electron (1.6x10^-19 C) T – temperature of the diode junction At room temperature (T=300 K), V T = 26mV. Substituting this value in current equation, For germanium diode, For silicon diode, since Ƞ =1 for Ge since Ƞ =2 for Si. If the value of applied voltage is greater than unity, then the equation of diode current for germanium, and for silicon, when the diode is reverse biased, its current equation may be obtained by changing the sign of voltage V. Thus diode current with reverse bias is
If V >> V T then the term e (-V/ Ƞ VT)
Page 1 and 2: FATIMA MICHAEL COLLEGE OF ENGINEERI
Page 3 and 4: temperature leads to an increase in
Page 5 and 6: THE PN JUNCTION The total charge on
Page 7 and 8: If one side of crystal pure semicon
Page 9: Forward currents V V P ( 0 ) p ( e
Page 13 and 14: (a) Exess hole concentration varyin
Page 15 and 16: As soon as equilibrium is disturbed
Page 17 and 18: Electrons forming covalent bonds of
Page 19 and 20: Forward recovery time is defined is
Page 21 and 22: In clamping networks used as DC Res
Page 23 and 24: Transistor currents - The arrow is
Page 25 and 26: • A very small number of carriers
Page 27 and 28: As the voltages applied to the base
Page 29 and 30: (5) The collector current is theref
Page 31 and 32: In CB configuration a variation of
Page 33 and 34: Input Characteristics It is defined
Page 35 and 36: Transistor parameters in CE configu
Page 37 and 38: To determine input characteristics,
Page 39: Hybrid-Pi Model Bipolar transistors
Page 42: The h-parameter model is defined by
Page 45 and 46: We can also write the emitter curre
Page 47 and 48: Gummel-Poon Model The Gummel-Poon m
Page 49 and 50: Multi Emitter Transistor (Transisto
Page 51 and 52: If the channel is doped with a dono
Page 53 and 54: • With a steady gate-source volta
Page 55 and 56: The metal-oxide semiconductor field
Page 57 and 58: Fig 2. n - channel depletion type M
Page 59 and 60: The SiO 2 layer is still present to
Page 61 and 62:
Fig 3. Change in channel and deplet
Page 63 and 64:
UNIT IV SPECIAL SEMICONDUCTOR DEVIC
Page 65 and 66:
Zener diode A Zener diode is a type
Page 67 and 68:
VARACTOR DIODE A varactor diode is
Page 69 and 70:
ENERGY BAND DIAGRAM Energy-band dia
Page 71 and 72:
- Hence tunneling current is maximu
Page 73 and 74:
laser (often another diode laser) a
Page 75 and 76:
LDR: A photoresistor or light-depen
Page 77 and 78:
UNIT V POWER DEVICES AND DISPLAY DE
Page 79 and 80:
Silicon Controlled Rectifier (SCR)
Page 81 and 82:
The SCR can be made to conduct heav
Page 83 and 84:
Construction The diac can be constr
Page 85 and 86:
When switch S is closed, the gate c
Page 87 and 88:
There is also the existence of two
Page 89 and 90:
A digit on an LCD display may have
Page 91 and 92:
‣Used for image sensing circuits.
Page 93 and 94:
same figure, a sketch of the photot
Page 95 and 96:
Fig 1. (a) cross section; (b) top v
Page 97 and 98:
phototransistor in the same package
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