EC6201_uw

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connected to the source terminal. However, many discrete devices provide an additional terminal labeled SS, resulting in a four-terminal device, such as that appearing in Fig. 1 The source and drain terminals are connected through metallic contacts to n-doped regions linked by an n-channel as shown in the figure. The gate is also connected to a metal contact surface but remains insulated from the n-channel by a very thin silicon dioxide (SiO 2 ) layer. SiO 2 is a particular type of insulator referred to as a dielectric that sets up opposing (as revealed by the prefix di-) electric fields within the dielectric when exposed to an externally applied field. Fig. 1 n – channel depletion type MOSFET There is no direct electrical connection between the gate terminal and the channel of a MOSFET. It is the insulating layer of SiO2 in the MOSFET construction that accounts for the very desirable high input impedance of the device. Basic Operation and Characteristics In Fig. 2 the gate-to-source voltage is set to zero volts by the direct connection from one terminal to the other, and a voltage VDS is applied across the drain-to-source terminals. The result is an attraction for the positive potential at the drain by the free electrons of the n-channel and a current similar to that established through the channel of the JFET. In fact, the resulting current with V GS = 0 V continues to be labeled IDSS, as shown in Fig. 3.
Fig 2. n – channel depletion type MOSFET with V GS = 0 V Fig 3. Drain and transfer characteristics
Page 1 and 2:
FATIMA MICHAEL COLLEGE OF ENGINEERI
Page 3 and 4:
temperature leads to an increase in
Page 5 and 6: THE PN JUNCTION The total charge on
Page 7 and 8: If one side of crystal pure semicon
Page 9 and 10: Forward currents V V P ( 0 ) p ( e
Page 11 and 12: If V >> V T then the term e (-V/ Ƞ
Page 13 and 14: (a) Exess hole concentration varyin
Page 15 and 16: As soon as equilibrium is disturbed
Page 17 and 18: Electrons forming covalent bonds of
Page 19 and 20: Forward recovery time is defined is
Page 21 and 22: In clamping networks used as DC Res
Page 23 and 24: Transistor currents - The arrow is
Page 25 and 26: • A very small number of carriers
Page 27 and 28: As the voltages applied to the base
Page 29 and 30: (5) The collector current is theref
Page 31 and 32: In CB configuration a variation of
Page 33 and 34: Input Characteristics It is defined
Page 35 and 36: Transistor parameters in CE configu
Page 37 and 38: To determine input characteristics,
Page 39: Hybrid-Pi Model Bipolar transistors
Page 42: The h-parameter model is defined by
Page 45 and 46: We can also write the emitter curre
Page 47 and 48: Gummel-Poon Model The Gummel-Poon m
Page 49 and 50: Multi Emitter Transistor (Transisto
Page 51 and 52: If the channel is doped with a dono
Page 53 and 54: • With a steady gate-source volta
Page 55: The metal-oxide semiconductor field
Page 59 and 60: The SiO 2 layer is still present to
Page 61 and 62: Fig 3. Change in channel and deplet
Page 63 and 64: UNIT IV SPECIAL SEMICONDUCTOR DEVIC
Page 65 and 66: Zener diode A Zener diode is a type
Page 67 and 68: VARACTOR DIODE A varactor diode is
Page 69 and 70: ENERGY BAND DIAGRAM Energy-band dia
Page 71 and 72: - Hence tunneling current is maximu
Page 73 and 74: laser (often another diode laser) a
Page 75 and 76: LDR: A photoresistor or light-depen
Page 77 and 78: UNIT V POWER DEVICES AND DISPLAY DE
Page 79 and 80: Silicon Controlled Rectifier (SCR)
Page 81 and 82: The SCR can be made to conduct heav
Page 83 and 84: Construction The diac can be constr
Page 85 and 86: When switch S is closed, the gate c
Page 87 and 88: There is also the existence of two
Page 89 and 90: A digit on an LCD display may have
Page 91 and 92: ‣Used for image sensing circuits.
Page 93 and 94: same figure, a sketch of the photot
Page 95 and 96: Fig 1. (a) cross section; (b) top v
Page 97 and 98: phototransistor in the same package
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