epdf.pub_nanotechnology-and-nanoelectronics-materials-devic

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AbbreviationsXVPADOX Pattern-dependent oxidationPDMS PolydimethylsiloxanePEPlasma etchingPECVD Plasma-enhanced chemical vapor depositionPET PolyethyleneterephthalatePLPhotoluminescencePLAD Plasma dopedPMMA PolymethylmethacrylatePREVAIL Projection reduction exposure with variable axis immersion lensesPTFE Polytetrafluorethylene (Teflon ® )PVD Physical vapor depositionQCLQSEQWIPRAMRBSRCARFRHEEDRIERITDRTARTBTRTDSAMSCALPELSCZSEMSETSFILSHTSIASIMOXSIMSSLSMDSOISOSSTMSWNTTATEDTEMTEOSTFTTMAHTSIQuantum cascade laserQuantum size effectQuantum well infrared photodetectorRandom access memoryRutherford backscattering spectrometryRadio Corporation of America (Company)Radio frequencyReflection high-energy electron diffractionReactive ion etchingResonant interband tunneling diodeRapid thermal annealingResonant tunneling bipolar transistorResonant tunneling diodeSelf-assembling monolayerScattering with angular limitation projection electron beam lithographySpace charge zoneScanning electron microscopySingle electron transistorStep and flash imprint lithographySingle hole transistorSemiconductor Industry AssociationSeparation by implantation of oxygenSecondary ion mass spectroscopySuperlatticeSurface-mounted deviceSilicon on insulatorSilicon on sapphireScanning tunneling microscope / microscopySingle wall nanotubesThermal analysisTransferred electron deviceTransmission electron microscopyTetraethylorthosilicateThin film transistorTetramethylammonium hydroxideTop surface imaging
XVIAbbreviationsTTLTUBEFETUHVULSIUVTransistor-transistor logicSingle carbon nanotube field-effect transistorUltrahigh vacuumUltra large scale integrationUltravioletVHF Very high frequency (30–300 MHz; 10–1 m)VLSI Very large scale integrationVMT Velocity-modulated transistorV-PADOX Vertical pattern-dependent oxidationVPE Vapor phase epitaxyXORXRDZMEExclusive orX-ray diffractionZeolite modified electrode
Page 1 and 2: W. R. Fahrner (Editor)Nanotechnolog
Page 3 and 4: Prof. Dr. W. R. FahrnerUniversity o
Page 5 and 6: ContentsContributors...............
Page 7 and 8: ContentsIX7 Nanostructuring .......
Page 9 and 10: ContributorsProf. Dr. rer. nat. Wol
Page 11: XIVAbbreviationsHBTHELHEMTHITHOMOHR
Page 15 and 16: 2 1 Historical Development1.2 Moore
Page 17 and 18: 2 Quantum Mechanical Aspects2.1 Gen
Page 19 and 20: 2.3 Formation of the Energy Gap 7st
Page 21 and 22: 2.4 Preliminary Considerations for
Page 23 and 24: 2.4 Preliminary Considerations for
Page 25 and 26: 2.5 Confinement Effects 13continuit
Page 27 and 28: 2.6 Evaluation and Future Prospects
Page 29 and 30: 18 3 Nanodefectsvacancies can form
Page 31 and 32: 20 3 NanodefectsIt should be noted
Page 33 and 34: 22 3 NanodefectsChf , Chf1(the norm
Page 35 and 36: 24 3 Nanodefectsq nivthg( x)NT( x)E
Page 37 and 38: 26 3 NanodefectsThe reason for the
Page 39 and 40: 28 3 Nanodefectsbidden band can be
Page 41 and 42: 30 3 NanodefectsFig. 3.18 Reverse r
Page 43 and 44: 32 3 Nanodefectsthe semiconductor.
Page 45 and 46: 34 3 Nanodefects3.3.4 Light-emittin
Page 47 and 48: 36 3 Nanodefectsdensity of the mate
Page 49 and 50: 38 3 NanodefectsIn diamond electron
Page 51 and 52: 40 4 Nanolayersvapor pressure devel
Page 53 and 54: 42 4 NanolayersFig. 4.4 DC voltage
Page 55 and 56: 44 4 Nanolayerssubstrate and plasma
Page 57 and 58: 46 4 NanolayersFig. 4.10Block diagr
Page 59 and 60: 48 4 NanolayersThe constituents of
Page 61 and 62: 50 4 NanolayersFig. 4.14 Ga-As phas
Page 63 and 64:
52 4 NanolayersTable 4.1 (cont’d)
Page 65 and 66:
54 4 NanolayersThe beam can be posi
Page 67 and 68:
56 4 NanolayersFig. 4.18 (a) Electr
Page 69 and 70:
58 4 NanolayersFig. 4.21 Dependency
Page 71 and 72:
60 4 NanolayersTable 4.2 Ranges, st
Page 73 and 74:
62 4 NanolayersFig. 4.22Oxide thick
Page 75 and 76:
64 4 NanolayersFig. 4.25Structure o
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66 4 NanolayersFig. 4.28 Michelson
Page 79 and 80:
68 4 NanolayersFig. 4.30Sample prep
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70 4 NanolayersFig. 4.33Geometric a
Page 83 and 84:
72 4 NanolayersThe theory of Fresne
Page 85 and 86:
74 4 NanolayersFig. 4.37 Dielectric
Page 87 and 88:
76 4 NanolayersFig. 4.41 Atomic for
Page 89 and 90:
78 4 Nanolayers2 sin [ M ( a k) /
Page 91 and 92:
80 4 NanolayersElectron diffraction
Page 93 and 94:
82 4 NanolayersAnother well-known v
Page 95 and 96:
84 4 NanolayersCr +CrO +Cu +P +Ga +
Page 97 and 98:
86 4 NanolayersFig. 4.54 Auger emis
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88 4 NanolayersDoping Level, Conduc
Page 101 and 102:
90 4 NanolayersFig. 4.59Specific re
Page 103 and 104:
92 4 NanolayersFig. 4.62High freque
Page 105 and 106:
94 4 NanolayersFig. 4.65 Bevel of a
Page 107 and 108:
96 4 Nanolayers(iii) Rutherford bac
Page 109 and 110:
98 4 NanolayersFig. 4.70 RBS spectr
Page 111 and 112:
100 4 NanolayersReflection, absorpt
Page 113 and 114:
102 4 Nanolayersthe image of a mult
Page 115 and 116:
104 4 Nanolayerscharge) can flow ov
Page 117 and 118:
5 Nanoparticles5.1 Fabrication of N
Page 119 and 120:
5.1 Fabrication of Nanoparticles 10
Page 121 and 122:
Page 123 and 124:
Page 125 and 126:
5.2 Characterization of Nanoparticl
Page 127 and 128:
5.3 Applications of Nanoparticles 1
Page 129 and 130:
5.4 Evaluation and Future Prospects
Page 131 and 132:
122 6 Selected Solid States with Na
Page 133 and 134:
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Page 137 and 138:
Page 139 and 140:
Page 141 and 142:
Page 143 and 144:
Page 145 and 146:
Page 147 and 148:
Page 149 and 150:
Page 151 and 152:
7 Nanostructuring7.1 Nanopolishing
Page 153 and 154:
7.1 Nanopolishing of Diamond 145Rem
Page 155 and 156:
7.1 Nanopolishing of Diamond 147For
Page 157 and 158:
7.1 Nanopolishing of Diamond 149Int
Page 159 and 160:
7.2 Etching of Nanostructures 151Fi
Page 161 and 162:
7.2 Etching of Nanostructures 153Fi
Page 163 and 164:
7.3 Lithography Procedures 155Fig.
Page 165 and 166:
7.3 Lithography Procedures 157The U
Page 167 and 168:
Page 169 and 170:
Page 171 and 172:
7.3 Lithography Procedures 163EUV m
Page 173 and 174:
Page 175 and 176:
Page 177 and 178:
7.3 Lithography Procedures 169er su
Page 179 and 180:
7.3 Lithography Procedures 171X-ray
Page 181 and 182:
7.4 Focused Ion Beams 173doses can
Page 183 and 184:
7.4 Focused Ion Beams 175with which
Page 185 and 186:
7.4 Focused Ion Beams 177Fig. 7.32b
Page 187 and 188:
7.4 Focused Ion Beams 179organic sa
Page 189 and 190:
7.4 Focused Ion Beams 181to a limit
Page 191 and 192:
7.4 Focused Ion Beams 183overcompen
Page 193 and 194:
7.4 Focused Ion Beams 185A further
Page 195 and 196:
7.4 Focused Ion Beams 187graphite a
Page 197 and 198:
7.5 Nanoimprinting 189A detailed di
Page 199 and 200:
7.5 Nanoimprinting 191Fig. 7.37wide
Page 201 and 202:
7.5 Nanoimprinting 193and the monom
Page 203 and 204:
7.6 Atomic Force Microscopy 195cess
Page 205 and 206:
7.7 Near-Field Optics 197in the pro
Page 207 and 208:
7.7 Near-Field Optics 199As another
Page 209 and 210:
202 8 Extension of Conventional Dev
Page 211 and 212:
Page 213 and 214:
Page 215 and 216:
Page 217 and 218:
Page 219 and 220:
Page 221 and 222:
214 9 Innovative Electronic Devices
Page 223 and 224:
Page 225 and 226:
Page 227 and 228:
Page 229 and 230:
Page 231 and 232:
Page 233 and 234:
Page 235 and 236:
Page 237 and 238:
Page 239 and 240:
Page 241 and 242:
Page 243 and 244:
Page 245 and 246:
References1 Historic Development1.
Page 247 and 248:
References 24132. Ulyashin AG, Ivan
Page 249 and 250:
References 24323. ed, p 670, Teubne
Page 251 and 252:
References 245book of Nanostructure
Page 253 and 254:
References 247140. Klug HP, Alexand
Page 255 and 256:
References 249and optical propertie
Page 257 and 258:
References 251219. Weima JA, Fahrne
Page 259 and 260:
References 253258. Jaszewski RW, Sc
Page 261 and 262:
References 255138 „Mikroelektroni
Page 263 and 264:
References 257326. Kawamura Y, Asai
Page 265 and 266:
References 259364. Ralph DC, Black
Page 267 and 268:
IndexMajor references are given in
Page 269 and 270:
Index 263electron, secondary 41, 17
Page 271 and 272:
Index 265LEED, see low energy elect
Page 273 and 274:
Index 267quantum well infrared phot
Page 275 and 276:
Index 269Wwafer scan procedure 157w
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