Senior Design Expo 2022

Applied Physics & Applied Mathematics
Laser-Induced Crystallization of Multilayer Amorphous Si Thin Films
Jonathan Katz
Laser recrystallization of amorphous silicon shows promise as an alternative pathway of GAA-
FET manufacture, but further questions need to be answered to fully assess the viability of the
approach. It appears that recrystallization of the silicon layers within a multilayer substrate is
possible and could be consistently achieved with greater control of conditions and parameters. This
process would further the development of transparent or in-situ display transistors, as well as
providing an alternative pathway for GAA-FET manufacture within a laboratory environment.
Laser Synthesis and Processing of Silicon Carbide
Alexander Killips
Advisor: James S. Im
Laser induced synthesis and processing of silicon carbide (SiC) was studied by irradiating a thin
carbon layer on top of silicon, as well as amorphous SiC (a-SiC). The carbon coated silicon was
prepared by evaporating carbon threads onto amorphous Si. The amorphous SiC was procured by
sputtering SiC onto a glass substrate. Each sample was then laser irradiated and studied via Optical
and Raman spectroscopy. The carbon layer was delaminated when irradiated by the laser.
Therefore, we were unable to synthesize SiC from the starting material. When the a-SiC was
irradiated with the laser, above a threshold energy density, a color change and Raman spectral shift
was observed. We suggest that the SiC underwent some crystallization to a nano-crystalline
microstructure, based on what the observations indicate. Further research is required to
demonstrate the feasibility of laser annealing of SiC for device use.
Keywords: Silicon Carbide, Laser Irradiation
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