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BD239/A/B/C NPN Epitaxial Silicon Transistor - EBG - Darmstadt

BD239/A/B/C NPN Epitaxial Silicon Transistor - EBG - Darmstadt

BD239/A/B/C NPN Epitaxial Silicon Transistor - EBG - Darmstadt

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<strong>BD239</strong>/A/B/C <strong>NPN</strong> EPITAXIAL SILICON TRANSISTOR<br />

MEDIUM POWER LINEAR AND SWITCHING<br />

APPLICATIONS<br />

• Complement to BD240/A/B/C respectively<br />

ABSOLUTE MAXIMUM RATINGS<br />

Characteristic Symbol Rating Unit<br />

Collector-Emitter Voltage : <strong>BD239</strong><br />

: <strong>BD239</strong>A<br />

: <strong>BD239</strong>B<br />

: <strong>BD239</strong>C<br />

Collector Emitter Voltage : <strong>BD239</strong><br />

: <strong>BD239</strong>A<br />

: <strong>BD239</strong>B<br />

: <strong>BD239</strong>C<br />

Emitter Base Voltage<br />

Collector Current (DC)<br />

Collector Current (Pulse)<br />

Base Current<br />

Collector Dissipation (TC=25°C)<br />

Junction Temperature<br />

Storage Temperature<br />

VCEO<br />

VCER<br />

VEBO<br />

ELECTRICAL CHARACTERISTICS (TC =25°C)<br />

* Pulse Test: PW =350μs, duty Cycle≤2.0% Pulsed<br />

IC<br />

IC<br />

IB<br />

PC<br />

TJ<br />

TSTG<br />

45<br />

60<br />

80<br />

100<br />

55<br />

70<br />

90<br />

115<br />

5<br />

2<br />

4<br />

0.6<br />

30<br />

150<br />

-65 ~ 150<br />

V<br />

V<br />

V<br />

V<br />

V<br />

V<br />

V<br />

V<br />

V<br />

A<br />

A<br />

A<br />

W<br />

°C<br />

°C<br />

Characteristic Symbol Test Conditions Min Typ Max Unit<br />

*Collector Emitter Sustaining Voltage : <strong>BD239</strong><br />

: <strong>BD239</strong>A<br />

: <strong>BD239</strong>B<br />

: <strong>BD239</strong>C<br />

Collector Cutoff Current : <strong>BD239</strong>/A<br />

: <strong>BD239</strong>B/C<br />

Collector Cutoff Current : <strong>BD239</strong><br />

: <strong>BD239</strong>A<br />

: <strong>BD239</strong>B<br />

: <strong>BD239</strong>C<br />

Emitter Cutoff Current<br />

*DC Current Gain<br />

*Collector Emitter Saturation Voltage<br />

*Base Emitter On Voltage<br />

©1999 Fairchild Semiconductor Corporation<br />

VCEO(sus)<br />

ICEO<br />

ICES<br />

IEBO<br />

hFE<br />

VCE(sat)<br />

VBE(on)<br />

IC = 30mA, IB = 0<br />

VCE = 30V, IB = 0<br />

VCE = 60V, IB = 0<br />

VCE = 45V, VBE = 0<br />

VCE = 60V, VBE = 0<br />

VCE = 80V, VBE = 0<br />

VCE = 100V, VBE = 0<br />

VEB = 5V, IC = 0<br />

VCE = 4V, IC = 0.2A<br />

VCE = 4V, IC = 1A<br />

IC = 1A, IB = 0.2A<br />

VCE = 4V, IC = 1A<br />

TO-220<br />

1.Base 2.Collector 3.Emitter<br />

45<br />

60<br />

80<br />

100<br />

40<br />

15<br />

0.3<br />

0.3<br />

0.2<br />

0.2<br />

0.2<br />

0.2<br />

1<br />

0.7<br />

1.3<br />

V<br />

V<br />

V<br />

V<br />

mA<br />

mA<br />

mA<br />

mA<br />

mA<br />

mA<br />

mA<br />

V<br />

V<br />

Rev. B


TRADEMARKS<br />

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is<br />

not intended to be an exhaustive list of all such trademarks.<br />

DISCLAIMER<br />

ACEx<br />

CoolFET<br />

CROSSVOLT<br />

E 2 CMOS TM<br />

FACT<br />

FACT Quiet Series<br />

FAST ®<br />

FASTr<br />

GTO<br />

HiSeC<br />

LIFE SUPPORT POLICY<br />

ISOPLANAR<br />

MICROWIRE<br />

POP<br />

PowerTrench<br />

QS<br />

Quiet Series<br />

SuperSOT-3<br />

SuperSOT-6<br />

SuperSOT-8<br />

TinyLogic<br />

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER<br />

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD<br />

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT<br />

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT<br />

RIGHTS, NOR THE RIGHTS OF OTHERS.<br />

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT<br />

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.<br />

As used herein:<br />

1. Life support devices or systems are devices or<br />

systems which, (a) are intended for surgical implant into<br />

the body, or (b) support or sustain life, or (c) whose<br />

failure to perform when properly used in accordance<br />

with instructions for use provided in the labeling, can be<br />

reasonably expected to result in significant injury to the<br />

user.<br />

PRODUCT STATUS DEFINITIONS<br />

Definition of Terms<br />

2. A critical component is any component of a life<br />

support device or system whose failure to perform can<br />

be reasonably expected to cause the failure of the life<br />

support device or system, or to affect its safety or<br />

effectiveness.<br />

Datasheet Identification Product Status Definition<br />

Advance Information<br />

Preliminary<br />

No Identification Needed<br />

Obsolete<br />

Formative or<br />

In Design<br />

First Production<br />

Full Production<br />

Not In Production<br />

This datasheet contains the design specifications for<br />

product development. Specifications may change in<br />

any manner without notice.<br />

This datasheet contains preliminary data, and<br />

supplementary data will be published at a later date.<br />

Fairchild Semiconductor reserves the right to make<br />

changes at any time without notice in order to improve<br />

design.<br />

This datasheet contains final specifications. Fairchild<br />

Semiconductor reserves the right to make changes at<br />

any time without notice in order to improve design.<br />

This datasheet contains specifications on a product<br />

that has been discontinued by Fairchild semiconductor.<br />

The datasheet is printed for reference information only.

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