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from original nonparabolicity. A set of unphysical fast oscillation eigenfunctions in confined states of heterostructures are
removed.
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Hamiltonian Functions; Vectors (Mathematics); Solution; Eigenvectors
20030025297 NASA Glenn Research Center, Cleveland, OH, USA
Synthesis and Characterization of Thin Film Lithium-Ion Batteries Using Polymer Electrolytes
Maranchi, Jeffrey P.; Kumta, Prashant N.; Hepp, Aloysius F.; Raffaelle, Ryne P.; [2002]; 1 pp.; In English; Centennial Meeting
of the Electrochemical Society, 15 May 2002, Philadelphia, PA, USA; Copyright; Avail: CASI; A01, Hardcopy
The present paper describes the integration of thin film electrodes with polymer electrolytes to form a complete thin film
lithium-ion battery. Thin film batteries of the type, LiCoO2 [PAN, EC, PC, LiN(CF3SO2)2] SnO2 have been fabricated. The
results of the synthesis and characterization studies will be presented and discussed.
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Metal Ions; Thin Films; Lithium Batteries; Electrolytes; Polymers; Fabrication; Synthesis (Chemistry)
20030025756 NASA Goddard Space Flight Center, Greenbelt, MD, USA
EEE Links, Volume 9, No. 1, January 2003 Focus on Plastic Parts
January 2003; 46 pp.; In English; No Copyright; Avail: CASI; A03, Hardcopy
The January 2003 issue of Electronic, Electromechanical, Electric (EEE) Links is presented. The Programmable Logic
Application Notes column has been reinstated in this newsletter. Written by Rich Katz of NASA’s Office of Logic Design
(OLD), the application notes offer technical tips intended to prevent flight design errors and enhance research, development,
and use of programmable logic and elements for space flight applications. An archive of these notes columns from previous
issues of EEE Links is available at http://www.klabs.org/richcontent/eeelink s/EEE Links.htm.
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Plastics; Electromechanical Devices; Periodicals; Components; Microelectronics; Electric Equipment
20030031367 NASA Goddard Space Flight Center, Greenbelt, MD, USA
Switching Oxide Traps
Oldham, Timothy R.; [2003]; 18 pp.; In English; No Copyright; Avail: CASI; A03, Hardcopy
We consider radiation-induced charge trapping in SiO2 dielectric layers, primarily from the point of view of CMOS
devices. However, SiO2 insulators are used in many other ways, and the same defects occur in other contexts. The key studies,
which determined the nature of the oxide charge traps, were done primarily on gate oxides in CMOS devices, because that
was the main radiation problem in CMOS at one time. There are two major reviews of radiation-induced oxide charge trapping
already in the literature, which discuss the subject in far greater detail than is possible here. The first of these was by McLean
et al. in 1989, and the second, ten years later, was intended as an update, because of additional, new work that had been
reported. Basically, the picture that has emerged is that ionizing radiation creates electron-hole pairs in the oxide, and the
electrons have much higher mobility than the holes. Therefore, the electrons are swept out of the oxide very rapidly by any
field that is present, leaving behind any holes that escape the initial recombination process. These holes then undergo a polaron
hopping transport toward the Si/SiO2 interface (under positive bias). Near the interface, some fraction of them fall into deep,
relatively stable, long-lived hole traps. The nature and annealing behavior of these hole traps is the main focus of this paper.
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Silicon Dioxide; Dielectrics; Cmos; Holes (Electron Deficiencies); Switching; Trapping
20030031368 Lockheed Martin Missiles and Space, Sunnyvale, CA, USA NASA Goddard Space Flight Center, Greenbelt,
MD, USA
NiH2 Cycle Life Study
Hollandsworth, Roger P.; Armantrout, Jon D.; Rao, Gopalakrishna M.; [2002]; 30 pp.; In English; 2002 NASA Aerospace
Battery Workshop, 19-21 Nov. 2002, Huntsville, AL, USA
Contract(s)/Grant(s): NAS8-32697; NAS5-5000; Copyright; Avail: CASI; A03, Hardcopy
Cycle life studies have been performed at Eagle Picher Technologies (EPT), on HST Mantech design cells with various
pedigrees of slurry and dry sinter processed electrodes, to evaluate peak load voltage performance during generic load profile
testing. These tests provide information for determining voltage and capacity fade (degradation) mechanisms, and their impact
on nickel hydrogen cell cycle life. Comparison of peak load voltage fade, as a function of State of Charge and cycle life, with
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