ANNO 2010 - dipartimento di fisica della materia e ingegneria ...
ANNO 2010 - dipartimento di fisica della materia e ingegneria ...
ANNO 2010 - dipartimento di fisica della materia e ingegneria ...
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C O N G R E S S I I N T E R N A Z I O N A L I<br />
A. Testa, S.De Caro, S. Panarello, S. Patanè, R. Letor, S. Russo, S. Poma, D. Patti, (<strong>2010</strong>).<br />
Comparative reliability assessment of Planar and Trench Gate Power MOSFETs for Automotive<br />
Applications. POWER ELECTRONICS INTELLIGENT MOTION POWER QUALITY (PCIM China<br />
<strong>2010</strong>) Shanghai, China 1 – 3 June <strong>2010</strong><br />
A. Testa, S. De Caro, S. Panarello, S. Patane’, R. Letor, S. Russo, D. Patti (<strong>2010</strong>). Lifetime estimation<br />
of Super-junction Power MOSFETs under short circuit and repeated avalanche operations . POWER<br />
ELECTRONICS INTELLIGENT MOTION POWER QUALITY (PCIM China <strong>2010</strong>) Shanghai, China 1<br />
– 3 June <strong>2010</strong><br />
S. Stelitano, S. Savasta, S. Patane’, G. De Luca, L. Monsu' Scolaro (<strong>2010</strong>). Optical Properties of<br />
Tetra(4-methoxyphenyl)porphyrin Thin Films and Their Applications. International conference on<br />
Porphyrins and Phthalocyanines (ICPP-6) Santa Ana Pueblo, New Mexico (USA) 04-09 Luglio <strong>2010</strong><br />
A. Testa, S. De Caro, S. Patane’, S. Panarello, S. Russo, D. Patti, S. Poma, (<strong>2010</strong>). Reliability<br />
Assessment on Power MOSFETs Working in Energy Absorption Mode. ECCE <strong>2010</strong>, Energy<br />
Conversion congress & EXPO Atlanta, GeorgiaUSA September 12-16, <strong>2010</strong><br />
A. Testa, S. De Caro, S. Panarello , S. Patane’, R. Letor, S. Russo, S. Poma, D. Patti (<strong>2010</strong>). Reliability<br />
assessment of Low-Voltage MOSFETs driving inductive loads. ISIE <strong>2010</strong>, International Symposium on<br />
Industrial Electronics Bari, Italy July 4-7, <strong>2010</strong><br />
Z. Marinkovic, G. Crupi, A. Caddemi, V. Markovic, “Development of a Neural Approach for Bias-<br />
Dependent Scalable Small-Signal Equivalent Circuit Modeling of GaAs HEMTs”, Procee<strong>di</strong>ngs of<br />
European Microwave Integrated Circuit Conference EUMIC <strong>2010</strong>, Paris, Sept. <strong>2010</strong>, pp.182-185.<br />
G. Crupi, A. Caddemi, D. M. Schreurs, A. Raffo, G. Avolio, S.M. Homayouni, G. Vannini, “Non-<br />
Quasi-Static Modeling of the Intrinsic Y22 for GaN, Si, and GaAs mm-Wave FET Technologies”,<br />
Procee<strong>di</strong>ngs of European Radar Conference EuRAD <strong>2010</strong>, Paris, Sept. <strong>2010</strong>, pp.316-319.<br />
D. M. Schreurs, M. Homayouni, G. Avolio, G. Crupi, A. Caddemi, “Capabilities and Limitations of<br />
Equivalent Circuit Models for Modeling Advanced Si FET Devices” (invited), Procee<strong>di</strong>ngs of the 17th<br />
International Conference on Mixed Design of Integrated Circuits and Systems - MIXDES <strong>2010</strong>,<br />
Wroclaw, Poland, June <strong>2010</strong>, pp.70-74.<br />
W. Wiatr, A. Caddemi, G. Crupi, D. M. Schreurs, A. Mercha, "Source-Pull Characterization of<br />
FinFET Noise", Procee<strong>di</strong>ngs of the 17th International Conference on Mixed Design of Integrated<br />
Circuits and Systems - MIXDES <strong>2010</strong>, Wroclaw, Poland, June <strong>2010</strong>, pp.425-430.<br />
Z. Marinkovic, G. Crupi, A. Caddemi, V. Markovic, "On the neural approach for FET small-signal<br />
modelling up to 50 GHz", Procee<strong>di</strong>ngs of the 10th Symposium on Neural Network Applications in<br />
Electrical Engineering - NEUREL <strong>2010</strong>, Belgrade, Serbia, Sept. <strong>2010</strong>, pp.89-92.<br />
M. Homayouni, D. M. M.-P. Schreurs, G. Crupi, G. Avolio, and B. Nauwelaers, “Evaluation of<br />
lookup table non-quasi-static nonlinear models at microwave and mm-wave frequencies,” IEEE<br />
DFMIE - Rapporto attività <strong>2010</strong><br />
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