Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
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Curvature measurements <strong>in</strong> TSSEL reactors<br />
Challenge: In TSSEL reactors optical access is limited<br />
� slightly modified w<strong>in</strong>dow with conical light path <strong>and</strong> larger<br />
top w<strong>in</strong>dow is advantageous (but st<strong>and</strong>ard view-port work).<br />
Showerhead hole is unchanged! No <strong>in</strong>fluence on growth!<br />
First EpiCurve set-up used at TSSEL:<br />
s<strong>in</strong>gle w<strong>in</strong>dow used for multiple wafer curvature monitor<strong>in</strong>g:<br />
The two beams are closely spaced<br />
� resolution limitted to: ± 10km -1<br />
High rotation speed compared to Aix 200/4<br />
� short time to get data, large jitter<br />
� enhanced position determ<strong>in</strong>ation needed (trigger<strong>in</strong>g to wafer centre)
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