Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
Strains and stresses in GaN heteroepitaxy â sources and ... - Laytec
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Summary<br />
• EpiCurve gives new <strong>in</strong>sight <strong>in</strong>to the growth of <strong>GaN</strong><br />
• It is suited for optimis<strong>in</strong>g stra<strong>in</strong> <strong>and</strong> to locate<br />
difficulties <strong>in</strong> growth<br />
• For stra<strong>in</strong>ed ternary alloys the concentrations <strong>and</strong><br />
critical layer thicknesses can be determ<strong>in</strong>ed<br />
• A higher resolution can be achieved even on vertical<br />
TSSEL reactors by larger beam separation
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