Switching diode - Datasheet Catalog
Switching diode - Datasheet Catalog
Switching diode - Datasheet Catalog
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Diodes<br />
<strong>Switching</strong> <strong>diode</strong><br />
1N4148 / 1N4150 / 1N4448 / 1N914B<br />
∗This product is available only outside of Japan.<br />
Applications<br />
High-speed switching<br />
Features<br />
1) Glass sealed envelope. (GSD)<br />
2) High speed.<br />
3) High reliability.<br />
Construction<br />
Silicon epitaxial planar<br />
Absolute maximum ratings (Ta = 25°C)<br />
Type<br />
VRM<br />
(V)<br />
VR<br />
(V)<br />
IFM<br />
(mA)<br />
IO<br />
(mA)<br />
1N4148 / 1N4150 / 1N4448 / 1N914B<br />
IF<br />
(mA)<br />
External dimensions (Units : mm)<br />
C<br />
CATHODE BAND (BLACK)<br />
Type No.<br />
29±1 3.8±0.2<br />
29±1<br />
ROHM : GSD<br />
EIAJ : −<br />
JEDEC : DO-35<br />
1N4148 100 75 450 150 200 2 500 200 −65~+200 −65~+200<br />
1N4150 50 50 600 200 250 4 500 200 −65~+200 −65~+200<br />
1N4448<br />
(1N914B)<br />
IFSM<br />
1µs<br />
(A)<br />
P<br />
(mW)<br />
A<br />
φ 0.5±0.1<br />
100 75 450 150 200 2 500 200 −65~+200 −65~+200<br />
Electrical characteristics (Ta = 25°C)<br />
Type<br />
@ @<br />
0.1mA 0.25mA<br />
@<br />
1mA<br />
@<br />
2mA<br />
VF (V)<br />
@ @ @ @ @ @ @ @<br />
5mA 10mA 20mA 30mA 50mA 100mA 200mA 250mA<br />
1N4148<br />
0.54<br />
1.0<br />
0.66<br />
0.76 0.82 0.87<br />
1N4150<br />
0.62<br />
0.74<br />
0.86 0.92 1.0<br />
1N4448<br />
0.62<br />
(IN914B)<br />
0.72<br />
1.0<br />
The upper figure is the minimum VF and the lower figure is the maximum VF value.<br />
Tj<br />
(°C)<br />
Topr<br />
(°C)<br />
φ 1.8±0.2<br />
Tstg<br />
(°C)<br />
BV (V) Min. IR (µA) Max. Cr (pF) trr (ns)<br />
@<br />
5µA<br />
@<br />
100µA<br />
@25°C<br />
VR (V)<br />
@150°C VR=0<br />
VR (V) f=1MHz<br />
VR=6V<br />
IF=10mA<br />
RL=100Ω<br />
75 100<br />
0.025<br />
5.0<br />
20<br />
75<br />
50.0 20 4 4<br />
− 50 0.1 50 100.0 50 2.5 4<br />
0.025 20<br />
− 100 50.0 20 4 4<br />
5.0 75
Diodes<br />
Electrical characteristic curves (Ta = 25°C)<br />
FORWARD CURRENT : IF (mA)<br />
REVERSE RECOVERY TIME : trr (ns)<br />
100<br />
50<br />
20<br />
10<br />
5<br />
2<br />
1<br />
0.5<br />
Ta=125°C<br />
Ta=75°C<br />
Ta=25°C<br />
Ta=−25°C<br />
0.2<br />
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br />
3<br />
2<br />
1<br />
0<br />
0<br />
FORWARD VOLTAGE : VF (V)<br />
Fig. 1 Forward characteristics<br />
10 20 30<br />
FORWARD CURRENT : IF (mA)<br />
Fig. 4 Reverse recovery time<br />
characteristics<br />
PULSE GENERATOR<br />
OUTPUT 50Ω<br />
INPUT<br />
OUTPUT<br />
IR<br />
0.01µF<br />
100ns<br />
trr<br />
VR=6V<br />
Irr=1/10IR<br />
D.U.T.<br />
REVERSE CURRENT : IR (nA)<br />
SURGE CURRENT : Isurge (A)<br />
3000<br />
1000<br />
300<br />
100<br />
30<br />
10<br />
100<br />
50<br />
20<br />
10<br />
5<br />
2<br />
3<br />
1N4148 / 1N4150 / 1N4448 / 1N914B<br />
100°C<br />
70°C<br />
50°C<br />
Ta=25°C<br />
0 20 40 60 80 100 120<br />
REVERSE VOLTAGE : VR (V)<br />
Fig. 2 Reverse characteristics<br />
PULSE<br />
Single pulse<br />
1<br />
0.1 1 10 100 1000 10000<br />
PULSE WIDTH : Tw (ms)<br />
Fig. 5 Surge current characteristics<br />
SAMPLING<br />
OSCILLOSCOPE<br />
Fig. 6 Reverse recovery time (trr) measurement circuit<br />
5Ω<br />
0.1IR<br />
50Ω<br />
0<br />
CAPACITANCE BETWEEN TERMINALS : CT (pF)<br />
3.0<br />
2.5<br />
2.0<br />
1.5<br />
1.0<br />
0.5<br />
0<br />
0<br />
f=1MHz<br />
5 10 15 20 25 30<br />
REVERSE VOLTAGE : VR (V)<br />
Fig. 3 Capacitance between<br />
terminals characteristics
This datasheet has been download from:<br />
www.datasheetcatalog.com<br />
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