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Topologically Defined Neuronal Networks Controlled by Silicon Chips

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CHAPTER 2. NETWORKS OF DEFINED TOPOGRAPHY<br />

Figure 2.6: Schematic illustration of the patterning procedure.<br />

2.3.1 Patterns of growth-promoting proteins<br />

Tracks of intact extracellular matrix proteins (ECM) surrounded <strong>by</strong> UV-inactivated areas have shown<br />

to reliably guide growing leech neurites [35]. This technique has been adapted to the requirements of<br />

Lymnaea neuronal cell culture <strong>by</strong> A. Prinz [79]. Instead of ECM, substrate-adsorbed material (SAM)<br />

is patterned with UV light. The procedure involves the following steps, which are also illustrated in fig.<br />

2.6:<br />

– deposit a layer of SAM on glass coverslips as described in section 2.2.2<br />

– remove conditioning brains, supernatant and flexiPERM adhesive culture chambers (in vitro Systems<br />

& Services, Osterode, Germany) and dry the coated coverslips in a sterile flow hood<br />

– 20min exposure to the full spectrum of a 200W mercury lamp (Osram HBO 200, intensity of the<br />

366nm-line approximately 170mW/cm 2 ) through a lithographic mask in direct contact with the<br />

proteinacious layer<br />

– remove the mask and rinse with defined medium to wash away denatured protein from exposed<br />

areas<br />

– attach flexiPERM chamber and refill with DM or a 1:1 mixture of DM and supernatant<br />

– place neurons on the patterned substrate and cultivate for two to three days<br />

Masks consist of 1mm-2mm thick silica plates transparent to UV light. They are coated with a thin but<br />

nontransparent layer of aluminum into which the desired patterns are etched [35].<br />

To avoid any contamination, the entire procedure, including UV exposure, is carried out under a sterile<br />

flowhood and the masks are immersed in a solution of 70% ethanol and 30% water for 30min prior to<br />

use.<br />

2.3.2 Topographic structures<br />

The first topographic structures were made from the n-type polyimide photoresist HTR3-200 (Olin<br />

GmbH, Munich, Germany) processed onto glass coverslips and pieces of Si-wafers. Process parameters<br />

and steps are similar to those described in [129]. Although compatible with cell culture and resistant<br />

to all cleaning procedures, including the short application of piranha solution (see 2.2.3), structures<br />

made from polyimide are not satisfactory. Resolution and feature accuracy is poor, especially for deep,<br />

narrow grooves with aspect ratios of 2 or higher (ratio of structure height to width). Also polyimide<br />

layers of 10µm thickness or more detach frequently at the sides of the grooves, leaving a gap between<br />

substrate and resist into which neurites can grow; as shown in fig. 2.7. Due to these limitations, HTR3-<br />

200 is not used any more for making topographic structures directly in contact with cell culture.<br />

Nevertheless, thin polyimide layers with well resolved features are ideally suited as sacrificial masks<br />

for etching the structure directly into the substrate underneath. However, the RIE80 Plasmalab etcher<br />

(Oxford Instruments) available in the departmental cleanroom facility cannot etch silicon anisotropically.<br />

Walls of grooves are not vertical but inclined, reducing the directional information drastically,<br />

with many neurites leaving the guidance structure. Etching topographic structures directly into the substrate<br />

was not followed any further, even though there are ways to process vertical walls into silicon,<br />

16

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