MJL21193 - Silicon Power Transistors - HEStore.hu

MJL21193, MJL21194
TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
3.0
1.4
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
T J = 25°C
I C /I B = 10
V CE(sat)
1.2
T J = 25°C
I C /I B = 10
V BE(sat) 0.4
1.0
0.8
0.6
0.2
0
1.0
10
100 0.1
I C , COLLECTOR CURRENT (AMPS)
SATURATION VOLTAGE (VOLTS)
V BE(sat)
V CE(sat)
1.0
10
I C , COLLECTOR CURRENT (AMPS)
100
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJL21193
NPN MJL21194
V BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
0.1
T J = 25°C
V CE = 20 V (SOLID)
V CE = 5 V (DASHED)
1.0
10
I C , COLLECTOR CURRENT (AMPS)
100
V BE(on)
, BASE-EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
0.1
T J = 25°C
V CE = 20 V (SOLID)
V CE = 5 V (DASHED)
1.0
10
I C , COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
I C
, COLLECTOR CURRENT (AMPS)
10
1.0
1 SEC
0.1
1.0 10 100 1000
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I C − V CE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure 13 is based on T J(pk) = 150°C; T C is variable
depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second breakdown.
Figure 13. Active Region Safe Operating Area
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