BF961 N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ...

N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
BF961
Vishay Semiconductors
Applications
Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.
Features
Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
3
4
G 2
D
2
G 1
94 9307 96 12647
1
BF961 Marking: BF961
Plastic case (TO 50)
1=Drain, 2=Source, 3=Gate 1, 4=Gate 2
12623
S
Absolute Maximum Ratings
T amb = 25 C, unless otherwise specified
Parameter Test Conditions Type Symbol Value Unit
Drain - source voltage V DS 20 V
Drain current I D 30 mA
Gate 1/Gate 2 - source peak current ±I G1/G2SM 10 mA
Total power dissipation T amb ≤ 60 C P tot 200 mW
Channel temperature T Ch 150 C
Storage temperature range T stg –55 to +150 C
Maximum Thermal Resistance
T amb = 25 C, unless otherwise specified
Parameter Test Conditions Symbol Value Unit
Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm 3
plated with 35m Cu
R thChA 450 K/W
Document Number 85002
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Rev. 3, 20-Jan-99 1 (7)

BF961
Vishay Semiconductors
Electrical DC Characteristics
T amb = 25 C, unless otherwise specified
Parameter Test Conditions Type Symbol Min Typ Max Unit
Drain - source I D = 10 A, –V G1S = –V G2S = 4 V V (BR)DS 20 V
breakdown voltage
Gate 1 - source ±I G1S = 10 mA, V G2S = V DS = 0 ±V (BR)G1SS 8 14 V
breakdown voltage
Gate 2 - source ±I G2S = 10 mA, V G1S = V DS = 0 ±V (BR)G2SS 8 14 V
breakdown voltage
Gate 1 - source ±V G1S = 5 V, V G2S = V DS = 0 ±I G1SS 100 nA
leakage current
Gate 2 - source ±V G2S = 5 V, V G1S = V DS = 0 ±I G2SS 100 nA
leakage current
Drain current V DS = 15 V, V G1S = 0, V G2S = 4 V BF961 I DSS 4 20 mA
BF961A I DSS 4 10.5 mA
BF961B I DSS 9.5 20 mA
Gate 1 - source V DS = 15 V, V G2S = 4 V, I D = 20 A –V G1S(OFF) 3.5 V
cut-off voltage
Gate 2 - source
cut-off voltage
V DS = 15 V, V G1S = 0, I D = 20 A –V G2S(OFF) 3.5 V
Electrical AC Characteristics
V DS = 15 V, I D = 10 mA, V G2S = 4 V, f = 1 MHz , T amb = 25 C, unless otherwise specified
Parameter Test Conditions Symbol Min Typ Max Unit
Forward transadmittance ⏐y 21s ⏐ 12 15 mS
Gate 1 input capacitance C issg1 3.7 pF
Gate 2 input capacitance V G1S = 0, V G2S = 4 V C issg2 1.6 pF
Feedback capacitance C rss 25 fF
Output capacitance C oss 1.6 pF
Power gain G S = 2 mS, G L = 0.5 mS, f = 200 MHz G ps 20 dB
AGC range V G2S = 4 to –2 V, f = 200 MHz G ps 50 dB
Noise figure G S = 2 mS, G L = 0.5 mS, f = 200 MHz F 1.8 2.5 dB
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Document Number 85002
Rev. 3, 20-Jan-99

Typical Characteristics (T amb = 25 C unless otherwise specified)
BF961
Vishay Semiconductors
P tot – Total Power Dissipation ( mW )
96 12159
I D – Drain Current ( mA )
96 12160
Y 21S – Forward Transadmittance ( mS )
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
22
20
18
16
14
12
10
T amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
V G1S = 0.6V
0.4V
0.2V
8
–0.2V
6
–0.4V
4
–0.6V
2
–0.8V
0
0 2 4 6 8 10 12 14 16 18 20 22 24
V DS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
96 12161
24
22
20
18
16
14
12
10
8
6
4
2
0
V DS =15V
I DS =10mA
–2 –1 0 1 2 3 4 5 6
V G2S – Gate 2 Source Voltage ( V )
0
V G1S =0.5V
0V
–0.5V
Figure 3. Forward Transadmittance vs.
Gate 2 Source Voltage
Y 21S – Forward Transadmittance ( mS )
96 12162
C issg1 – Gate 1 Input Capacitance ( pF )
96 12163
C issg2 – Gate 2 Input Capacitance ( pF )
96 12164
22
20
18
16
14
12
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V DS =15V
f=1MHz V G2S =5V
8
4V
6
4
0V
3V
2
2V
1V
0
–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V G1S – Gate 1 Source Voltage ( V )
Figure 4. Forward Transadmittance vs.
Gate 1 Source Voltage
V DS =15V
V G2S =4V
f=1MHz
0
–2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V G1S – Gate 1 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
V DS =15V
V G1S =0
f=1MHz
0
–2 –1 0 1 2 3 4 5 6 7
V G2S – Gate 2 Source Voltage ( V )
Figure 6. Gate 2 Input Capacitance vs.
Gate 2 Source Voltage
Document Number 85002
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Rev. 3, 20-Jan-99 3 (7)

BF961
Vishay Semiconductors
C oss – Output Capacitance ( pF )
96 12165
3.0
2.5
2.0
1.5
1.0
0.5
V G2S =4V
f=1MHz
0
0 2 4 6 8 10 12 14 16 18 20 22
V DS – Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
Im ( y 11 ) ( mS )
96 12166
18
16
14
12
10
8
6
4
2
600MHz
300MHz
200MHz
100MHz
400MHz
f=700MHz
500MHz
0
0 1 2 3 4 5 6 7 8 9 10
Re (y 11 ) ( mS )
V DS =15V
V G2S =4V
I D =5...20mA
f=50...700MHz
Figure 8. Short Circuit Input Admittance
Im ( y 21 ) ( mS )
96 12167
10
5
0
V DS =15V
V G2S =4V
f=50...700MHz
–5
I D =5mA
100MHz
10mA
–10 20mA
200MHz
300MHz
–15
400MHz
–20
500MHz
–25
600MHz
700MHz
–30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Re (y 21 ) ( mS )
f=50MHz
Figure 9. Short Circuit Forward Transfer Admittance
Im ( y 22 ) ( mS )
96 12168
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I D =5mA
300MHz
200MHz
100MHz
400MHz
500MHz
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Re (y 22 ) ( mS )
f=700MHz
600MHz
I D =20mA
V DS =15V
V G2S =4V
I D =5...20mA
f=50...700MHz
Figure 10. Short Circuit Output Admittance
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Document Number 85002
Rev. 3, 20-Jan-99

V DS = 15 V, I D = 5 to 20 mA, V G2S = 4 V , Z 0 = 50
BF961
Vishay Semiconductors
j0.5
j
j2
j0.2
j5
S 11
–j0.2
S 12
120°
90°
60°
150°
300
30°
0
0.2 0.5 1 ÁÁÁÁ
ÁÁ
ÁÁÁ
ÁÁÁ
2 ÁÁ
ÁÁ
5
100
ÁÁ
50
180°
700MHz
600
0.04 0.08
0°
ÁÁÁ
700 MHz
500
ÁÁ
300
–j5
–150°
–30°
–j0.5
–j2
12 920
–j
Figure 11. Input reflection coefficient
–120° –60°
12 921
–90°
Figure 13. Reverse transmission coefficient
90°
120° 60°
j0.5
j
j2
200
400
30°
j0.2
j5
180°
–150°
50
S 21
0°
700MHz
0.8 1.6
I D = 20mA
10mA
5mA –30°
–30°
S 22
12 923
0
–j0.2
0.2 0.5 1 2 5 ÁÁ ÁÁ ÁÁ ÁÁÁ ÁÁÁ
700 MHz
100
300
500
–j5
–120° –60°
12 922
–90°
Figure 12. Forward transmission coefficient
–j0.5
–j2
–j
Figure 14. Output reflection coefficient
Document Number 85002
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Rev. 3, 20-Jan-99 5 (7)

BF961
Vishay Semiconductors
Dimensions in mm
96 12242
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6 (7)
Document Number 85002
Rev. 3, 20-Jan-99

BF961
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85002
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Rev. 3, 20-Jan-99 7 (7)

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