BF961 NâChannel Dual Gate MOS-Fieldeffect Tetrode, Depletion ...

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BF961 NâChannel Dual Gate MOS-Fieldeffect Tetrode, Depletion ...

BF961 NâChannel Dual Gate MOS-Fieldeffect Tetrode, Depletion ...

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This datasheet has been download from:<br />

www.datasheetcatalog.com<br />

Datasheets for electronics components.

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

Page 1 and 2: N-Channel Dual Gate MOS-Fieldeffect
Page 3 and 4: Typical Characteristics (T amb = 25
Page 5 and 6: V DS = 15 V, I D = 5 to 20 mA, V G2
Page 7: BF961 Vishay Semiconductors Ozone D