BF961 N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion ...

BF961
Vishay Semiconductors
C oss – Output Capacitance ( pF )
96 12165
3.0
2.5
2.0
1.5
1.0
0.5
V G2S =4V
f=1MHz
0
0 2 4 6 8 10 12 14 16 18 20 22
V DS – Drain Source Voltage ( V )
Figure 7. Output Capacitance vs. Drain Source Voltage
Im ( y 11 ) ( mS )
96 12166
18
16
14
12
10
8
6
4
2
600MHz
300MHz
200MHz
100MHz
400MHz
f=700MHz
500MHz
0
0 1 2 3 4 5 6 7 8 9 10
Re (y 11 ) ( mS )
V DS =15V
V G2S =4V
I D =5...20mA
f=50...700MHz
Figure 8. Short Circuit Input Admittance
Im ( y 21 ) ( mS )
96 12167
10
5
0
V DS =15V
V G2S =4V
f=50...700MHz
–5
I D =5mA
100MHz
10mA
–10 20mA
200MHz
300MHz
–15
400MHz
–20
500MHz
–25
600MHz
700MHz
–30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Re (y 21 ) ( mS )
f=50MHz
Figure 9. Short Circuit Forward Transfer Admittance
Im ( y 22 ) ( mS )
96 12168
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
I D =5mA
300MHz
200MHz
100MHz
400MHz
500MHz
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Re (y 22 ) ( mS )
f=700MHz
600MHz
I D =20mA
V DS =15V
V G2S =4V
I D =5...20mA
f=50...700MHz
Figure 10. Short Circuit Output Admittance
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Document Number 85002
Rev. 3, 20-Jan-99