IRLZ24N data sheet - International Rectifier

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Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications
G
PD - 91357C
IRLZ24N
HEXFET ® Power MOSFET
D
S
V DSS = 55V
R DS(on) = 006Ω
I D = 18A
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts The low thermal resistance
TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry
Absolute Maximum Ratings
Parameter Max Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 18
I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 13 A
I DM Pulsed Drain Current 72
P D @T C = 25°C Power Dissipation 45 W
Linear Derating Factor 030 W/°C
V GS Gate-to-Source Voltage ±16 V
E AS Single Pulse Avalanche Energy ‚ 68 mJ
I AR Avalanche Current 11 A
E AR Repetitive Avalanche Energy 45 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 50 V/ns
T J Operating Junction and -55 to + 175
T STG Storage Temperature Range °C
Soldering Temperature, for 10 seconds
300 (16mm from case)
Mounting torque, 6-32 or M3 screw
10 lbf•in (11N•m)
Thermal Resistance
Parameter Min Typ Max Units
R θJC Junction-to-Case –––– –––– 33
R θCS Case-to-Sink, Flat, Greased Surface –––– 050 –––– °C/W
R θJA Junction-to-Ambient –––– –––– 62
07/12/02

IRLZ24N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, I D = 250µA
∆V (BR)DSS/∆T J Breakdown Voltage Temp Coefficient ––– 0061 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0060 V GS = 10V, I D = 11A „
R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0075 Ω V GS = 50V, I D = 11A „
––– ––– 0105 V GS = 40V, I D = 90A „
V GS(th) Gate Threshold Voltage 10 ––– 20 V V DS = V GS , I D = 250µA
g fs Forward Transconductance 83 ––– ––– S V DS = 25V, I D = 11A
I DSS Drain-to-Source Leakage Current
––– ––– 25 V DS = 55V, V GS = 0V
µA
––– ––– 250 V DS = 44V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V
Q g Total Gate Charge ––– ––– 15 I D = 11A
Q gs Gate-to-Source Charge ––– ––– 37 nC V DS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 85 V GS = 50V, See Fig 6 and 13 „
t d(on) Turn-On Delay Time ––– 71 ––– V DD = 28V
t r Rise Time ––– 74 ––– I D = 11A
ns
t d(off) Turn-Off Delay Time ––– 20 ––– R G = 12Ω, V GS = 50V
t f Fall Time ––– 29 ––– R D = 24Ω, See Fig 10 „
Between lead,
L D Internal Drain Inductance ––– 45 –––
6mm (025in)
nH
from package
L S Internal Source Inductance ––– 75 –––
and center of die contact
C iss Input Capacitance ––– 480 ––– V GS = 0V
C oss Output Capacitance ––– 130 ––– pF V DS = 25V
C rss Reverse Transfer Capacitance ––– 61 ––– ƒ = 10MHz, See Fig 5
G
D
S
Source-Drain Ratings and Characteristics
Parameter Min Typ Max Units Conditions
I S Continuous Source Current MOSFET symbol
––– ––– 18
(Body Diode)
showing the
A
G
I SM Pulsed Source Current integral reverse
––– ––– 72
(Body Diode)
p-n junction diode
V SD Diode Forward Voltage ––– ––– 13 V T J = 25°C, I S = 11A, V GS = 0V „
t rr Reverse Recovery Time ––– 60 90 ns T J = 25°C, I F = 11A
Q rr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs „
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
D
S
Notes:
Repetitive rating; pulse width limited by
max junction temperature ( See fig 11 )
‚ V DD = 25V, starting T J = 25°C, L = 790µH
R G = 25Ω, I AS = 11A (See Figure 12)
ƒ I SD ≤ 11A, di/dt ≤ 290A/µs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%

IRLZ24N
I D , Drain-to-Source Current (A)
100
10
1
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
0.1
T J = 25°C
A
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
100
10
1
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
20µs PULSE WIDTH
0.1
T J = 175°C
A
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 1 Typical Output Characteristics
Fig 2 Typical Output Characteristics
I D , Drain-to-Source Current (A)
100
10
1
T = 25°C J
T = 175°C
J
V DS= 15V
20µs PULSE WIDTH
0.1
A
2 3 4 5 6 7 8 9 10
V GS , Gate-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
I D = 18A
V GS = 10V
0.0
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 3 Typical Transfer Characteristics
Fig 4 Normalized On-Resistance
Vs Temperature

IRLZ24N
C, Capacitance (pF)
800
600
400
200
V GS = 0V, f = 1MHz
C iss = C gs + C gd , C ds SHORTED
C rss = Cgd
C oss = C ds + Cgd
C iss
C oss
C rss
0
V GS , Gate-to-Source Voltage (V)
15
12
9
6
3
I D = 11A
V DS = 44V
V DS = 28V
0
A
1 10 100
V DS , Drain-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE 13
0 4 8 12 16 20
Q , Total Gate Charge (nC)
G
A
Fig 5 Typical Capacitance Vs
Drain-to-Source Voltage
Fig 6 Typical Gate Charge Vs
Gate-to-Source Voltage
I SD , Reverse Drain Current (A)
100
10
T = 175°C J
T = 25°C J
V GS = 0V
1
A
0.4 0.8 1.2 1.6 2.0
V SD , Source-to-Drain Voltage (V)
I D , Drain Current (A)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10
100µs
T C = 25°C
1ms
T J = 175°C
Single Pulse
10ms
1
A
1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 7 Typical Source-Drain Diode
Forward Voltage
Fig 8 Maximum Safe Operating Area

IRLZ24N
20
V DS
R D
I D , Drain Current (Amps)
16
12
8
4
0
A
25 50 75 100 125 150 175
T C, Case Temperature (°C)
10
Fig 9 Maximum Drain Current Vs
Case Temperature
Fig 10a Switching Time Test Circuit
V DS
90%
R G
V GS
50V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
DUT
10%
V GS
t d(on) t r t d(off) t f
Fig 10b Switching Time Waveforms
+
- V DD
Thermal Response (Z thJC )
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
2. Peak T J = P DMx Z thJC + T
C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
1 2
P
DM
t
1
t 2
A
Fig 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRLZ24N
L
V DS
D.U.T.
R G +
V
- DD
50 V
I AS
t p 0.01Ω
Fig 12a Unclamped Inductive Test Circuit
V (BR)DSS
t p
E AS , Single Pulse Avalanche Energy (mJ)
140
120
100
80
60
40
20
I D
TOP 4.5A
7.8A
BOTTOM 11A
V DD = 25V
0
A
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
V DS
V DD
Fig 12c Maximum Avalanche Energy
Vs Drain Current
I AS
Fig 12b Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q G
12V
.2µF
.3µF
50 V
Q GS
Q GD
D.U.T.
+
V
- DS
V GS
V G
3mA
Charge
I G I D
Current Sampling Resistors
Fig 13a Basic Gate Charge Waveform
Fig 13b Gate Charge Test Circuit

IRLZ24N
Peak Diode Recovery dv/dt Test Circuit
DUT
+
ƒ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
R G
• dv/dt controlled by R G
• Driver same type as DUT
• I SD controlled by Duty Factor "D"
• DUT - Device Under Test
+
-
V DD
Driver Gate Drive
Period
P.W.
D =
P.W.
Period
V GS =10V
*
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
V DD
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
I SD
* V GS = 5V for Logic Level Devices
Fig 14 For N-Channel HEXFETS

IRLZ24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
3.78 (.149)
3.54 (.139)
- A -
4.69 (.185)
4.20 (.165)
- B -
1.32 (.052)
1.22 (.048)
15.24 (.600)
14.84 (.584)
4
6.47 (.255)
6.10 (.240)
1 2 3
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
NOTES:
3X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
0.55 (.022)
3X
0.46 (.018)
2.92 (.115)
2.64 (.104)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
IRF1010
9246
9B 1M
A
PART NUMBER
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/02

Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/