IRLZ24N data sheet - International Rectifier

IRLZ24N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min Typ Max Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V V GS = 0V, I D = 250µA
∆V (BR)DSS/∆T J Breakdown Voltage Temp Coefficient ––– 0061 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0060 V GS = 10V, I D = 11A „
R DS(on) Static Drain-to-Source On-Resistance ––– ––– 0075 Ω V GS = 50V, I D = 11A „
––– ––– 0105 V GS = 40V, I D = 90A „
V GS(th) Gate Threshold Voltage 10 ––– 20 V V DS = V GS , I D = 250µA
g fs Forward Transconductance 83 ––– ––– S V DS = 25V, I D = 11A
I DSS Drain-to-Source Leakage Current
––– ––– 25 V DS = 55V, V GS = 0V
µA
––– ––– 250 V DS = 44V, V GS = 0V, T J = 150°C
I GSS
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 16V
nA
Gate-to-Source Reverse Leakage ––– ––– -100 V GS = -16V
Q g Total Gate Charge ––– ––– 15 I D = 11A
Q gs Gate-to-Source Charge ––– ––– 37 nC V DS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 85 V GS = 50V, See Fig 6 and 13 „
t d(on) Turn-On Delay Time ––– 71 ––– V DD = 28V
t r Rise Time ––– 74 ––– I D = 11A
ns
t d(off) Turn-Off Delay Time ––– 20 ––– R G = 12Ω, V GS = 50V
t f Fall Time ––– 29 ––– R D = 24Ω, See Fig 10 „
Between lead,
L D Internal Drain Inductance ––– 45 –––
6mm (025in)
nH
from package
L S Internal Source Inductance ––– 75 –––
and center of die contact
C iss Input Capacitance ––– 480 ––– V GS = 0V
C oss Output Capacitance ––– 130 ––– pF V DS = 25V
C rss Reverse Transfer Capacitance ––– 61 ––– ƒ = 10MHz, See Fig 5
G
D
S
Source-Drain Ratings and Characteristics
Parameter Min Typ Max Units Conditions
I S Continuous Source Current MOSFET symbol
––– ––– 18
(Body Diode)
showing the
A
G
I SM Pulsed Source Current integral reverse
––– ––– 72
(Body Diode)
p-n junction diode
V SD Diode Forward Voltage ––– ––– 13 V T J = 25°C, I S = 11A, V GS = 0V „
t rr Reverse Recovery Time ––– 60 90 ns T J = 25°C, I F = 11A
Q rr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs „
t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
D
S
Notes:
Repetitive rating; pulse width limited by
max junction temperature ( See fig 11 )
‚ V DD = 25V, starting T J = 25°C, L = 790µH
R G = 25Ω, I AS = 11A (See Figure 12)
ƒ I SD ≤ 11A, di/dt ≤ 290A/µs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%