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The Basics of Probe Measurements on Wafers and Other Substrates

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High Frequency Design<br />

PROBE MEASUREMENTS<br />

From May 2011 High Frequency Electr<strong>on</strong>ics<br />

Copyright © 2011 Summit Technical Media, LLC<br />

<str<strong>on</strong>g>The</str<strong>on</strong>g> <str<strong>on</strong>g>Basics</str<strong>on</strong>g> <str<strong>on</strong>g>of</str<strong>on</strong>g> <str<strong>on</strong>g>Probe</str<strong>on</strong>g><br />

<str<strong>on</strong>g>Measurements</str<strong>on</strong>g> <strong>on</strong> <strong>Wafers</strong><br />

<strong>and</strong> <strong>Other</strong> <strong>Substrates</strong><br />

By Gary Breed<br />

Editorial Director<br />

Microwave measurements<br />

<str<strong>on</strong>g>of</str<strong>on</strong>g>ten<br />

Here is an introducti<strong>on</strong> to<br />

the applicati<strong>on</strong>s <strong>and</strong> technical<br />

issues for microwave probe (Fig. 1) be used to<br />

require that a<br />

probe measurements <str<strong>on</strong>g>of</str<strong>on</strong>g> c<strong>on</strong>tact the circuit c<strong>on</strong>ductors<br />

<strong>on</strong> the substrate<br />

various circuit types<br />

up<strong>on</strong> which the circuit is<br />

c<strong>on</strong>structed: typically a semic<strong>on</strong>ductor wafer,<br />

ceramic substrate or microwave laminate<br />

material. This tutorial reviews some <str<strong>on</strong>g>of</str<strong>on</strong>g> the<br />

applicati<strong>on</strong>s for these measurements, <strong>and</strong> presents<br />

the key issues affecting measurement<br />

accuracy <strong>and</strong> repeatability.<br />

Figure 1 · <str<strong>on</strong>g>Probe</str<strong>on</strong>g>s for microwave device<br />

measurements, mounted in adjustable<br />

probe holders [1].<br />

Comm<strong>on</strong> <str<strong>on</strong>g>Probe</str<strong>on</strong>g> <str<strong>on</strong>g>Measurements</str<strong>on</strong>g><br />

On-wafer testing—Producti<strong>on</strong> testing <str<strong>on</strong>g>of</str<strong>on</strong>g><br />

semic<strong>on</strong>ductor die is <str<strong>on</strong>g>of</str<strong>on</strong>g>ten performed after dicing<br />

<strong>and</strong> packaging, but a sample must be tested<br />

for two main reas<strong>on</strong>s: verificati<strong>on</strong> that fabricati<strong>on</strong><br />

was completed satisfactorily, <strong>and</strong> for<br />

characterizati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> the bare die before packaging.<br />

Device characterizati<strong>on</strong> at the die level is<br />

essential, since packaging necessarily affects<br />

performance. Knowing the device performance<br />

before packaging allows the test engineer to<br />

determine how various packaging opti<strong>on</strong>s<br />

affect device performance.<br />

Developmental <strong>on</strong>-wafer circuits—It is comm<strong>on</strong><br />

practice to use secti<strong>on</strong>s <str<strong>on</strong>g>of</str<strong>on</strong>g> producti<strong>on</strong><br />

wafers for fabricati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> test die for devices in<br />

development. <str<strong>on</strong>g>The</str<strong>on</strong>g> ability to do <strong>on</strong>-wafer testing<br />

eliminates the need for packaging the devices,<br />

or mounting them to some other test fixture.<br />

Characterizati<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> passive comp<strong>on</strong>ents—<br />

Individual circuit elements are combined for<br />

any practical RF/microwave/high speed functi<strong>on</strong>.<br />

With the present str<strong>on</strong>g reliance <strong>on</strong> modeling<br />

<strong>and</strong> simulati<strong>on</strong> prior to actual fabricati<strong>on</strong><br />

<strong>and</strong> prototyping, accurate characterizati<strong>on</strong><br />

<str<strong>on</strong>g>of</str<strong>on</strong>g> capacitors, inductors, resistors <strong>and</strong><br />

transmissi<strong>on</strong> lines are needed to develop the<br />

necessary mathematical models for inclusi<strong>on</strong><br />

in the s<str<strong>on</strong>g>of</str<strong>on</strong>g>tware tools. <str<strong>on</strong>g>The</str<strong>on</strong>g> comp<strong>on</strong>ents may be<br />

segments <str<strong>on</strong>g>of</str<strong>on</strong>g> a m<strong>on</strong>olithic circuit or separate<br />

discrete devices.<br />

Package characterizati<strong>on</strong>—Not can individual<br />

devices be characterized, but packages<br />

can be tested to determine their specific performance-modifying<br />

effects. Figure 2 shows<br />

two types <str<strong>on</strong>g>of</str<strong>on</strong>g> packages that might be used with<br />

single transistors or multi-functi<strong>on</strong> ICs.<br />

N<strong>on</strong>-m<strong>on</strong>olithic integrated circuits—<br />

Whether integrated <strong>on</strong> ceramic, microwave<br />

laminate, or other substrate, microwave circuits<br />

require testing. Today, very small-size<br />

assemblies are comm<strong>on</strong>, with miniature discrete<br />

comp<strong>on</strong>ents <strong>and</strong> thick film fabricati<strong>on</strong><br />

78 High Frequency Electr<strong>on</strong>ics


High Frequency Design<br />

PROBE MEASUREMENTS<br />

techniques. <str<strong>on</strong>g>The</str<strong>on</strong>g>se circuits are <str<strong>on</strong>g>of</str<strong>on</strong>g>ten<br />

tested using probing techniques<br />

rather than the c<strong>on</strong>nectorized fixtures<br />

that were used in the past.<br />

Any <str<strong>on</strong>g>of</str<strong>on</strong>g> the above measurements<br />

may be use for either R&D or quantity<br />

producti<strong>on</strong>.<br />

Key Issues for <str<strong>on</strong>g>Probe</str<strong>on</strong>g><br />

<str<strong>on</strong>g>Measurements</str<strong>on</strong>g><br />

1. <str<strong>on</strong>g>Probe</str<strong>on</strong>g> performance<br />

Whether the chosen probe is coaxial<br />

or coplanar in structure, the following<br />

issues must be c<strong>on</strong>sidered.<br />

C<strong>on</strong>tact pressure—<str<strong>on</strong>g>The</str<strong>on</strong>g> probe<br />

must have sufficient force to make<br />

reliable electrical c<strong>on</strong>tact, but must<br />

not deform either the probe structure<br />

or the DUT c<strong>on</strong>tact point. Commercial<br />

probes are built with these factor<br />

in mind, <strong>and</strong> the manufacturers provide<br />

data <strong>on</strong> setup <strong>and</strong> maintenance.<br />

Repeatability—<str<strong>on</strong>g>The</str<strong>on</strong>g> probe characteristics<br />

should remain c<strong>on</strong>stant over<br />

a significant number <str<strong>on</strong>g>of</str<strong>on</strong>g> placements<br />

<strong>and</strong> measurements.<br />

RF performance—<str<strong>on</strong>g>The</str<strong>on</strong>g> probe must<br />

have known RF characteristics, with<br />

c<strong>on</strong>stant impedance (minimal disc<strong>on</strong>tinuities)<br />

from the probe tip to the<br />

instrumentati<strong>on</strong> c<strong>on</strong>nector.<br />

Calibrati<strong>on</strong> procedures—This is<br />

the most-referenced issue with probe<br />

measurements. Like all microwave<br />

measurements, instrument interc<strong>on</strong>necti<strong>on</strong>s<br />

can have a large effect.<br />

St<strong>and</strong>ard TRL (Terminati<strong>on</strong>, Reflecti<strong>on</strong><br />

<strong>and</strong> thru-Line) calibrati<strong>on</strong> methods<br />

are more difficult to make at the<br />

probe tip than with c<strong>on</strong>nectors. <str<strong>on</strong>g>The</str<strong>on</strong>g><br />

choice <str<strong>on</strong>g>of</str<strong>on</strong>g> terminati<strong>on</strong>, short circuit<br />

<strong>and</strong> line secti<strong>on</strong> must match the<br />

intended use <str<strong>on</strong>g>of</str<strong>on</strong>g> the probe. See<br />

References [3, 4] to begin your indepth<br />

study <str<strong>on</strong>g>of</str<strong>on</strong>g> probe calibrati<strong>on</strong>.<br />

2. Fixture performance<br />

Reference plane de-embedding—<br />

With the DUT mounted <strong>on</strong> a carrier<br />

substrate or clamped fixture, the calibrati<strong>on</strong><br />

<str<strong>on</strong>g>of</str<strong>on</strong>g> the probe must be extended<br />

to the actual DUT c<strong>on</strong>necti<strong>on</strong>. This<br />

may be d<strong>on</strong>e with TRL calibrati<strong>on</strong>,<br />

but matching DUT c<strong>on</strong>necti<strong>on</strong> points<br />

Figure 2 · Two types <str<strong>on</strong>g>of</str<strong>on</strong>g> packages that can be characterized using<br />

microwave probe testing [1].<br />

may be difficult. Calibrati<strong>on</strong> may be<br />

simplest using probes to measure the<br />

characteristics <str<strong>on</strong>g>of</str<strong>on</strong>g> the segment from<br />

the probe c<strong>on</strong>tact to the DUT placement<br />

point.<br />

Parasitics—Any fixture must<br />

have the best possible impedance<br />

match, low inductance <strong>and</strong> low stray<br />

capacitance. A fixture should be<br />

designed for low radiati<strong>on</strong> loss as<br />

well, especially at the higher<br />

microwave frequencies.<br />

Device mounting—<str<strong>on</strong>g>The</str<strong>on</strong>g> method<br />

placing the DUT into the fixture by<br />

clamping or soldering should not<br />

modify the electrical characteristics.<br />

<strong>Other</strong>wise, the measurements cannot<br />

be trusted. This is a minor issue with<br />

a well-designed commercial fixture,<br />

but must be addressed thoughtfully<br />

with in-house fabricated fixtures <strong>and</strong><br />

adapters.<br />

3. System factors<br />

<str<strong>on</strong>g>Probe</str<strong>on</strong>g> mounting—<str<strong>on</strong>g>Probe</str<strong>on</strong>g>s must be<br />

securely fixed in positi<strong>on</strong>. <str<strong>on</strong>g>The</str<strong>on</strong>g> probe<br />

stati<strong>on</strong> or probe card must also have<br />

flexible mounting opti<strong>on</strong>s, to accommodate<br />

the range <str<strong>on</strong>g>of</str<strong>on</strong>g> devices to be<br />

tested.<br />

C<strong>on</strong>necti<strong>on</strong> to instruments—High<br />

quality c<strong>on</strong>nectors <strong>and</strong> support for<br />

interc<strong>on</strong>necting cables, with minimum<br />

bending, are essential for any<br />

probe measurement system. This is<br />

good practice for all microwave measurements,<br />

not just with probes.<br />

DUT mounting—As noted above,<br />

the DUT must be reliably mounted.<br />

In automated producti<strong>on</strong> test systems,<br />

accurate positi<strong>on</strong>ing is essential<br />

since there are multiple c<strong>on</strong>necti<strong>on</strong>s<br />

that must be maintained during<br />

the series <str<strong>on</strong>g>of</str<strong>on</strong>g> tests.<br />

Summary<br />

<str<strong>on</strong>g>Probe</str<strong>on</strong>g> testing <str<strong>on</strong>g>of</str<strong>on</strong>g> microwave<br />

devices <strong>and</strong> circuits is a big part <str<strong>on</strong>g>of</str<strong>on</strong>g><br />

both development <strong>and</strong> producti<strong>on</strong>. In<br />

development, it is the means for<br />

obtaining good models for simulati<strong>on</strong>,<br />

<strong>and</strong> for verifying performance <str<strong>on</strong>g>of</str<strong>on</strong>g> prototypes<br />

<strong>and</strong> pre-producti<strong>on</strong> samples.<br />

In producti<strong>on</strong>, accurate probe measurements<br />

are needed to verify process<br />

yield <strong>and</strong> c<strong>on</strong>sistent performance<br />

from <strong>on</strong>e batch to the next.<br />

Accuracy, reliability <strong>and</strong> repeatability<br />

require knowledge <strong>and</strong> attenti<strong>on</strong><br />

to the performance factors described<br />

in this note.<br />

References<br />

1. “Precise, Repeatable RF <str<strong>on</strong>g>Measurements</str<strong>on</strong>g>:<br />

Applying CPW <str<strong>on</strong>g>Probe</str<strong>on</strong>g>s to<br />

Everyday Test Problems,” available<br />

at www.jmicrotechnology.com<br />

2. E. Strid, R. Gleas<strong>on</strong>, K. J<strong>on</strong>es,<br />

“40 GHz On-Wafer <str<strong>on</strong>g>Measurements</str<strong>on</strong>g><br />

with the HP 8510 Network Analyzer<br />

<strong>and</strong> Cascade Microtech Wafer<br />

<str<strong>on</strong>g>Probe</str<strong>on</strong>g>s,” www.hparchive.com/seminar_notes/a-133.pdf<br />

3. D. F. Williams <strong>and</strong> R. B. Marks,<br />

“Calibrating On-Wafer <str<strong>on</strong>g>Probe</str<strong>on</strong>g>s to the<br />

<str<strong>on</strong>g>Probe</str<strong>on</strong>g> Tips,” at www.nist.gov<br />

4. Extensive references <strong>on</strong> probe<br />

calibrati<strong>on</strong> <strong>and</strong> measurements are<br />

available at: www.nist.gov/pml/electromagnetics/rf_electr<strong>on</strong>ics/<br />

80 High Frequency Electr<strong>on</strong>ics

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