Graphene-on-SiC - ISOM
Graphene-on-SiC - ISOM
Graphene-on-SiC - ISOM
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NEWS ANALYSIS<br />
Hybrid silic<strong>on</strong> prepares<br />
to displace InP<br />
phot<strong>on</strong>ic chips<br />
Will hybrid silic<strong>on</strong> be the platform of choice<br />
for complex phot<strong>on</strong>ic integrated circuits?<br />
Compound Semic<strong>on</strong>ductor talks to<br />
Martijn Heck from the University of<br />
California, Santa Barbara, to find out more.<br />
in 2006, rEsEarChErs at thE<br />
UniVErsitY oF CaliFornia, santa<br />
Barbara, and intel unveiled the world’s<br />
first electrically pumped hybrid silic<strong>on</strong><br />
laser. taking advantage of the lightemitting<br />
properties of iii-V semic<strong>on</strong>ductors<br />
as well as mature Cmos processes to<br />
fabricate lasers <strong>on</strong> a silic<strong>on</strong> wafer, the<br />
device unlocked the door to cheap, massproduced<br />
silic<strong>on</strong> optical devices.<br />
Fast forward seven years and many<br />
believe the stage is now well and truly set<br />
for a hybrid silic<strong>on</strong> phot<strong>on</strong>ic revoluti<strong>on</strong>.<br />
myriad hybrid devices − from laser<br />
sources and optical amplifiers to highspeed<br />
modulators, waveguides and<br />
polarisati<strong>on</strong> comp<strong>on</strong>ents − have been<br />
developed, forming the building blocks<br />
of phot<strong>on</strong>ic integrated circuits (PiCs).<br />
UCsB has developed tapered mode<br />
c<strong>on</strong>verters to integrate hybrid silic<strong>on</strong><br />
comp<strong>on</strong>ents with passive silic<strong>on</strong>-<strong>on</strong>insulator<br />
substrates and used quantum<br />
well intermixing and die-b<strong>on</strong>ding to<br />
18 www.compoundsemic<strong>on</strong>ductor.net April/May 2013