Graphene-on-SiC - ISOM

More documents

Recommendations

Info

10 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10 GaN epitaxy for power electronics • In-situ SiN capping layer - Optimal surface states passivation - Material robustness - Enhanced device reliability – stability • Wafer Diameter: up to 200 mm • Materials capability: - SiN/AlGaN/GaN HEMTs - SiN/AlN/GaN - (In)(Al)GaN – based heterostructures • Substrates: - Si (111) - SiC For more information, please visit www.epigan.com or contact info@epigan.com EpiGaN nv · Kempische Steenweg 293 · B-3500 Hasselt · Belgium · Phone +32 11 56 66 20 10 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 9 10
Volume 19 Issue 3 2013 @compoundsemi www.compoundsemiconductor.net News Review, News Analysis, Features, Research Review and much more. Free Weekly E News round up , go to www.compoundsemiconductor.net Leaping from lab to fab contents Volume 19 Issue 3 2013 ConneCtIng the CoMPoUnD SeMIConDUCtor CoMMUnIty features 26 30 42 46 52 59 graphene-on-SiC heads from lab to fab To fulfil the tremendous potential of graphene, high-quality material must be shipped in significant volumes. One supplier looking to do just that is Graphensic, which has developed graphene-on SiC products for making structures for metrology, high-speed transistors and biosensors. Strategies for photovoltaic performance There are many options for improving the performance of III-V solar cells, including inserting quantum wells and dots to extend spectral coverage and adding nanoparticles and diffraction gratings to boost light trapping. Boosting gan-on-silicon blocking voltages A misconception is holding back the development and deployment of GaN devices that are built on silicon substrates. This platform is widely blamed for compromising blocking voltages, but it doesn’t: It is possible to make diodes and HEMTs on silicon that have breakdown voltages of well over 2 kV. Addressing the big issues at CS International The impact of Qualcomm’s CMOS amplifier on the GaAs RF market, the steps that must be taken to make LED light bulbs affordable, and the most likely path that will be taken to enable the introduction of power electronics in the grid were all discussed by leading market analysts at CS International. gan Fets inch closer to volume production Like many companies around the world, RF Micro Devices and Transphorm are moving from the development of GaN FETs to their production. How far have these firms progressed? research review Crystalline GaN grows on an amorphous platform Upping the efficiency of ultraviolet LEDs Eliminating the buffer between InGaN and silicon 26 30 Enhancing PV absorption AMEC sets sights on GaN lighting Hybrid silicon to replace InP chips Slashing the cost of LED lighting Effi ciency hike for ultraviolet LEDs <strong>Graphene</strong>-on-SiC NEWS: 06 Plessey releases first 6-inch GaN-on-silicon LED products 07 Avago to acquire InP innovator CyOptics 08 First Solar’s CdTe sets total area efficiency record 10 Nitride semiconductors set a new benchmark for UV LED output power 11 Sol Voltaics GaAs nanowires boost solar performance by 25 percent 12 Aledia grows 3D GaN LEDs on 8 inch silicon 46 NEWS ANALYSIS: 16 AMEC sets sights on GaN lighting 18 Hybrid silicon prepares to displace InP photonic chips 20 Lower cost LED lighting 22 The Qualcomm 4G radio chip: Hit or hype? 23 UV LEDs: Will substrates slow growth? 24 SiC infiltrates inverter markets Magazine & Front Cover: Designed by Mitch Gaynor 52 April/May 2013 www.compoundsemiconductor.net 5
Page 1 and 2: Volume 19 Issue 3 2013 @compoundsem
Page 3: editorialview by Dr Richard Stevens
Page 7 and 8: NEWS REVIEW Avago to acquire InP in
Page 9 and 10: 100 mm SiC WAFER 150 mm SiC WAFER C
Page 11 and 12: NEWS REVIEW Sol Voltaics GaAs nanow
Page 13 and 14: www.lesker.com to Navigate Obstacle
Page 15 and 16: CS CONFERENCE REVIEW April/May 2013
Page 17 and 18: NEWS ANALYSIS AmEC is sticking with
Page 19 and 20: NEWS ANALYSIS and make these high-p
Page 21 and 22: Reprints are a valuable sales tool
Page 23 and 24: UV LEDs: Will substrates slow growt
Page 25 and 26: Optimize the Thermal Performance of
Page 27 and 28: TECHNOLOGY GRAPHENE Development and
Page 29 and 30: “Now offering Germanium Reclaim
Page 31 and 32: TECHNOLOGY SOLAR CELLS Figure 1: Th
Page 33 and 34: TECHNOLOGY SOLAR CELLS absorption (
Page 35 and 36: and the winners are... Substrates &
Page 37 and 38: CS INDUSTRY AWARDS WINNERS DEVICE D
Page 39 and 40: CS INDUSTRY AWARDS WINNERS CS MANUF
Page 41 and 42: CS INDUSTRY AWARDS WINNERS R&D AWAR
Page 43 and 44: TECHNOLOGY GaN POWER ELECTRONICS br
Page 45 and 46: TECHNOLOGY GaN POWER ELECTRONICS de
Page 47 and 48: INDUSTRY MARKETS It is possible tha
Page 49 and 50: INDUSTRY MARKETS re-routing when li
Page 51 and 52: EQUIPMENT • MATERIALS PACKAGING
Page 53 and 54: INDUSTRY GaN FETs There are now mor
Page 56:
INDUSTRY GaN FETs $17.7 billion in
Page 59 and 60:
RESEARCH REVIEW Crystalline GaN gro
Page 61 and 62:
Eliminating the buffer between InGa
Page 63 and 64:
To promote your Products and Servic
Page 65 and 66:
Contents ♦ news digest News Diges
Page 67 and 68:
LEDs ♦ news digest Cree leads LED
Page 69 and 70:
LEDs ♦ news digest for the third
Page 71 and 72:
LEDs ♦ news digest The U-M emitte
Page 73 and 74:
LEDs ♦ news digest technology lea
Page 75 and 76:
LEDs ♦ news digest two emission c
Page 77 and 78:
LEDs ♦ news digest Green LEDs (Cr
Page 79 and 80:
LEDs ♦ news digest As a consequen
Page 81 and 82:
LEDs ♦ news digest And Osram says
Page 83 and 84:
LEDs ♦ news digest also improve t
Page 85 and 86:
LEDs ♦ news digest Trademark Offi
Page 87 and 88:
LEDs ♦ news digest Gaskleen purif
Page 89 and 90:
LEDs ♦ news digest The Samsung LM
Page 91 and 92:
Telecoms ♦ news digest Right now,
Page 93 and 94:
Telecoms ♦ news digest ESD (Elect
Page 95 and 96:
Telecoms ♦ news digest The Xenics
Page 97 and 98:
Telecoms ♦ news digest market InP
Page 99 and 100:
Telecoms ♦ news digest First mass
Page 101 and 102:
Telecoms ♦ news digest New SiGe a
Page 103 and 104:
Telecoms ♦ news digest be complia
Page 105 and 106:
Telecoms ♦ news digest unique hig
Page 107 and 108:
Telecoms ♦ news digest The GEN200
Page 109 and 110:
Lasers ♦ news digest Nitronex app
Page 111 and 112:
Lasers ♦ news digest high-power l
Page 113 and 114:
Lasers ♦ news digest could use th
Page 115 and 116:
Solar ♦ news digest 3S Photonics
Page 117 and 118:
Solar ♦ news digest which fill up
Page 119 and 120:
Solar ♦ news digest Packaged SiC
Page 121 and 122:
Solar ♦ news digest The U-M emitt
Page 123 and 124:
Solar ♦ news digest First Solar t
Page 125 and 126:
Solar ♦ news digest technology.
Page 127 and 128:
Solar ♦ news digest technology lo
Page 129 and 130:
Solar ♦ news digest However, it w
Page 131 and 132:
Solar ♦ news digest Manz’s CIGS
Page 133 and 134:
Solar ♦ news digest consumption d
Page 135 and 136:
Power Electronics ♦ news digest t
Page 137 and 138:
Power Electronics ♦ news digest a
Page 139 and 140:
Power Electronics ♦ news digest e
Page 141 and 142:
Power Electronics ♦ news digest G
Page 143 and 144:
Equipment and Materials ♦ news di
Page 145 and 146:
Page 147 and 148:
Page 149 and 150:
Page 151 and 152:
Page 153 and 154:
Page 155 and 156:
Page 157 and 158:
Novel Devices ♦ news digest in th
Page 159 and 160:
Novel Devices ♦ news digest One i
Page 161:
Novel Devices ♦ news digest Optic
show all

Graphene-on-SiC - ISOM

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?