Graphene-on-SiC - ISOM

CS INDUSTRY AWARDS WINNERS
SUBSTRATES & MATERIALS AWARD
Winner: Cree Inc.
For: 150-mm 4HN Silicon Carbide Epitaxial Wafers
Richard Stevenson, Editor,
congratulates
Chris Horton, Director,
Global Sales & Marketing
Cree InC., a supplier of SiC and Gan materials,
successfully developed and introduced 150-mm
4H n-type silicon carbide, (SiC) epitaxial wafers
in 2012. These high quality, low micropipe 150-
mm substrates and epitaxial wafers demonstrate
Cree’s latest advancement in SiC technology.
Cree continues to lead the SiC materials
marketplace in driving to larger diameters, as they
were first to market in 75mm, 100-mm and now
150-mm wafers. This latest development of 150-
mm wafers drives down manufacturing and device
costs while also enabling designers to exploit the
inherent advantages of SiC with larger, higher
power devices.
The superior performance of SiC (10x the
breakdown field of Si, 3x the thermal conductivity
of Si, and 3x the bandgap of Si) enables faster
switching, higher current density, higher temperature
operation and higher efficiency devices. Typical
applications include Schottky barrier diodes utilized
for power factor correction, motor drive applications,
as well as exciting recent developments in SiC
MOSFeTS, providing the highest energy efficiency
and fastest switching speeds versus any comparable
silicon power switch.
Cree’s long standing commitment and investment
in SiC technology offers customers a complete
turnkey solution for high quality 150-mm
substrates and epitaxial wafers, all delivered to
customer specification with a stable, reliable and
secure supply chain. SiC is a high-performance
semiconductor material used in the production
of a broad range of lighting, power and
communication components including LeD, power
switching devices and rF power transistors for
wireless communications.
What challenge does this address?
While the current industry standard SiC wafers
have progressed from 75-mm to 100-mm
diameter, most Silicon power semiconductor
manufacturing operates on 150-mm or 200-mm
fabrication lines, representing additional costs and
investment. Additionally, as the industry demands
smaller, lower cost and higher efficiency devices,
the move to 150-mm wafers increases device
yields and lowers total device cost.
How does it solve the problem?
This latest development of large diameter, high
quality and highly uniform epitaxial wafers
increases applications and lowers device costs,
enabling significant new milestones in device
cost, power density and efficiency. Ultimately,
this move to large diameter, high quality material
will drive wide-spread adoption of SiC within the
power electronics market.
© 2013 Angel Business Communications.
Permission required.
Richard Stevenson, Editor of
Compound Semiconductor comments:
“The wide bandgap power electronics market is
tipped to rocket throughout this decade. Large
diameter, high-quality substrates produced by
Cree will help to drive this expansion.”
40 www.compoundsemiconductor.net April/May 2013