CATALOGUE 2010 - ITME

INSTYTUT TECHNOLOGII MATERIAŁÓW ELEKTRONICZNYCH 

INSTITUTE OF ELECTRONIC MATERIALS TECHNOLOGY 

133 Wólczyńska str., 01-919 Warsaw, POLAND 

CATALOGUE 2010 

Shortform 

 

We offer cooperation and we can provide 

custom-prepared materials. 

For more information about the ITME, 

please contact us at: 

Tel. + 48 22 835 30 41 

Fax : + 48 22 864 54 96 

E-mail: itme@itme.edu.pl 

Homepage: www.itme.edu.pl 

* WARSZAWA

CONTENTS 

INTRODUCTION 

I. SEMICONDUCTOR MATERIALS 

- Silicon Wafers – as Cut, Lapped, Etched, Polished 

- High-Resistivity, Thick Silicon Epitaxial Layers for Photodetectores and Detectors of Nuclear 

Radiation 

- Silicon Epitaxial Wafers 

- A III B V Compounds for Microwave and Optoelectronic Devices 

- Multicomponent Epitaxial Submicron and Nanometer Scale MOVPE Heterostructures of III-V 

Semiconductors 

- SiC Wafers Polityp 4H and 6H 

II. MATERIALS FOR OPTO-PIEZO- AND SUPERCONDUCTOR ELECTRONICS 

- Materials for Solid State Laser 

- Substrates for HTSc Layers 

- SAW Quartz Substrates 

- Synthetic Quartz Crystals 

- Substrates materials for GaN 

III. CERAMIC AND CERAMIC TO METAL COMPONENTS 

Ceramics and Seals Technology: 

- Pure Alumina Ceramics 

- Yttria Ceramics, Zirconia Ceramics 

- Ceramic-Metal Feed-Through, Composite Ceramics Al 2 O 3 – ZrO 2 

- Alumina Cooper Direct Bonding Substrates 

- Ceramics Blade Adjustment Tools 

- Transparent Ceramics 

IV. GLASS PRODUCTS 

- Glass Laboratory 

- Glass Fiber Optic Products for Sensor Systems 

- Glass Filters for Dentist Polymerization Lamps 

- Fiber Optic Light Guide Rods 

- Light Guide Applicators for Surgical Photon Coagulator 

- Active Fluoride Glasses 

- High Non-Linear Refractive Index Glass 

- Multicapillary Glass Plates 

- All-solid PCF 

V. THICK-FILM MATERIALS 

- Thick-Film Technology 

- Thick-Film Compositions 

VI. ELECTRONIC DEVICES, COMPONENTS AND MASKS 

- Ultraviolet Detectors Built on GaN/AlGaN 

- X-rays and α - particles detectors on GaAs 

- Laser Diode 810 nm 1.5W 

- Laser Diode 810 nm 3W 

- InGaAs/InP RCE Photodiodes for 1.5 μm; 1.94μm; 2.06 μm band 

- Mask shop at ITME 

- Diffractive Optical Elements (DOEs) 

- Double-Sided Diffractive Optical Elements 

- Diffractive Beam Concentrator for Laser Diode Bars 

- Kinoform Sampling Filter 

- SAW Filters and Components for Sensors 

- Fixed-Point Sealed Cells of metals as temperature standards 

VII. SERVICE 

- Laboratory of Characterisation of High Purity Materials

Institute of Electronic Materials Technology 


Tel.: (+48 22) 835 30 41, tel.:(+48 22) 834 90 03, Fax: (+48 22) 864 54 96 

http://www.itme.edu.pl e-mail: itme@itme.edu.pl 

INTRODUCTION 

The Institute of Electronic Materials Technology (ITME) develops highly advanced 

technologies for the production of materials with perfect crystallography and specific 

properties to suit the requirements of modern day and future electronics. ITME has been the 

leading centre for electronic materials for 30 years, and now is subordinate to the Ministry of 

Economy 

ITME produces crystals of semi-conductors, and optical, piezoelectric and superconductive 

materials. It also manufactures super-pure metals, active glass and optical fibres, new 

ceramic and composite materials, and other materials which have unique properties and wide 

range of applications. 

The research and development work is integrated with experimental production of electronic 

products and components. These top-quality and international-standard products are widely 

used both at home and worldwide. 

ITME cooperates with numerous domestic and foreign research centres, participates in 

national and international research programs and provides access to its modern laboratories 

for schools and universities for educational purposes. 

ITME continues the idea and work of the outstanding Polish scientist, Professor Jan 

Czochralski who originated the method of material mono-crystallization which is now widely 

used throughout the world. 

SINGLE CRYSTALS GROWN in ITME by CZOCHRALSKI METHOD: 

Si 

A III B V : 

(GaAs, InP, GaP, InAs, GaP) 

Oxides: YAG, YAP, LiNbO 3 , LiTaO 3 , Li 2 BB4O 7 , 

Sapphire (Al 2 O 3 ) , NdGaO 3 , LSAT, ABCO 4 

(A=Ca, Sr; B=Nd, La; C=Al, Ga), 

Ca 4 GdO(BO 3 ) 3 

Materials for Electronics − single crystals of perfect crystallographic structures 

and specific properties required in advanced electronics 

For: 

‣ semiconductor devices, 

‣ opto-, piezo-, microelectronics, 

‣ high temperature superconductor (HTSc) layers



Tel.: centr. (+48 22) 835 30 41÷ 49, Tel: (+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 

http://www.itme.edu.pl 

e-mail: itme@itme.edu.pl 

SILICON WAFERS - AS CUT, LAPPED, ETCHED, POLISHED 

Silicon wafers are cut from silicon single crystal using internal diameter diamond discs. Silicon wafers are lapped of 

both sides with abrasive mixture. After cutting or lapping the wafers are washed in ultrasonic washers or undergo 

active washing. The wafers’ edges are mechanically rounded. Silicon wafers are etched in acid mixture or alkaline. 

Wafers surface is alkaline or acid etched according to the customer’s request. Active sides of the wafers (for single 

side polishes wafers) or both sides (for two sides polished wafers) are chemo-mechanically polished. The below 

mentioned parameters are dealing with our standard production. On the customer’s request we are ready to 

discuss orders for wafers with some other parameters, for instance: 

Low radial resistivity variation (RRV) combined with the uniform distribution of dopants in the 

crystal (this parameter depends on shape of phase boundary and the phenomena in the 

boundary layer during monocrystallization process). 

Perfect crystallographic structure of material (free from swirls, with dislocations density lower 

than recommended by SEMI standard — 500/cm 2 ). 

Low oxygen concentration (O 2






HIGH - RESISTIVITY, THICK SILICON EPITAXIAL 

LAYERS for PHOTODETECTORS AND DETECTORS 

OF NUCLEAR RADIATION 

Detectors built on an epitaxial layer of the high-resistivity silicon which is deposited 

on the silicon substrate of low resistivity are characterized by: 

‣ well determined thickness of depletion region; 

‣ low voltage of full depletion; 

‣ low leakage current; 

‣ long minority carrier life-time. 

Areas of application: 

experimental physics, dosimetry of high energy particles; 

multiplicity filters of charged-particle; 

p-i-n photodetectors for ultraviolet light, visible light, and 

infrared radiation; 

avalanche photodiodes. 

Technical parameters of silicon epitaxial wafers: 

Substrates: * Diameter: 76.2 ± 0.2 mm; 100 ± 0.5 mm; 

* Orientation: with 2 ÷ 4 ± 0.5 deg off towards ; 

* Conductivity type: p and n. 

Epitaxial layers: 

* single layer; 

* multilayer epitaxial structures; 

* epilayer with the designed profile of resistivity; 

EPITAXIAL LAYER THICKNESS: 

‣ from 1 μm to 200 μm; 

‣ radial thickness variation < 6 %; 

EPITAXIAL LAYER RESISTIVITY: 

‣ 

from 0,1Ωcm to 5000 Ωcm; 

The following methods are used for the characterization of layers: 

‣ thickness measurement by infra-red spectrometry (FTIR) ; 

♦ (map of the thickness distribution on the wafer on request) 

‣ resistivity measurement by the spreading resistance technique 

and the C-V measurements; 

♦ characterization of deep traps by C-DLTS on request. 

For more information please contact: 

Tel.: (+48 22) 835 30 41 ext. 188; Fax: (+48 22) 834 90 03 

Fax: (+48 22 ) 864 54 96 

Contact person: Jerzy Sarnecki M.Sc. 

e-mail:sarnecki@itme.edu.pl






SILICON EPITAXIAL WAFERS 

Standard epitaxial layers 

Silicon epitaxial layers are deposited on silicon monocrystaline substrates by means of CVD 

process. SiCl 4 or SiHCl 3 are used as a silicon source and phosphorus (for n- type) or boron 

(for p-type) as dopants. 

Technical data: 

Substrates specification: 

Cz - grown monocrystaline Si; 

orientation: or off 2.5 ÷ 4 deg. towards . 

standard dimensions: 

substrate resistivity: 

Diameter [mm] Thickness [µm ] 

76 380 

100 525 

125 625 

Conductivity 

type 

Epitaxial layers parameters: 

Dopant 


Tel.: (+48 22) 835 30 41 ext. 188; Fax: (+48 22) 834 90 03 

Fax: (+48 22 ) 864 54 96 


e-mail:sarnecki@itme.edu.pl 

Resistivity range 

[Ωcm] 

n Sb 0.008 ÷0.02 

n As 0.001 ÷ 0.005 

p B 0.005 ÷ 0.02 

Thickness range 

[µm] 

Tolerance 

% 

2 – 10 ± 4 

10 – 50 ± 5 

50 – 100 ± 8 

Resistivity range 

[Ωcm] 

Tolerance 

% 

0.5 – 5 ± 10 

5 – 50 ± 15 

50 – 200 ± 20 

Besides standard, single layers, multilayers epitaxial structures are available.






SILICON EPITAXIAL WAFERS 

FOR NUCLEAR RADIATION DETECTORS 

AND PHOTODETECTORS 

Hihg resistivity epitaxial layer deposited on a low resistivity substrate 

Epitaxial layer thicknes: 20 to 200 µm 

Epitaxial layer resistivity: 50 to 5000 Ωcm 

RESISTIVITY PROFILES 

N-type epitaxial layers 


Tel.: (+48 22) 835 30 41 ext. 188; Fax: (+48 22) 834 90 03 

Fax: (+48 22 ) 864 54 96 


e-mail:sarnecki@itme.edu.pl



Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22) 864 54 96 


AIIIBV compounds for semiconductor devices 

A III B V compounds for semiconductor devices 

The Institute of Electronic Materials Technology has an experience for over 30 years 

in the technology of A III B V compounds. In this field we carry research and a small 

scale production. 

We have developed synthesis, monocrystalization, mechanical processing and 

characterization of: GaAs, InAs, GaP, InP, GaSb, InSb. 

OUR PRODUCT RANGE 

GaAs 

grown by Czochralski (LEC) method (low and high-pressure) 

diameter 2", 3" and 4", orientation [100] or [111] 

• n-type : Te, Sn or Si (n=10 17 ÷10 19 cm -3 ) 

• p-type : Zn (n=10 17 ÷10 19 cm -3 ) 

• SI : undoped (µ>6x10 3 cm 2 /Vs, ρ>10 7 Ωcm) 

• SI : Cr (ρ>10 7 Ωcm) 

• 3" GaAs wafers (semiconducting or SI) with EPD < 10 4 cm -2 are also available. 

InAs 

grown by Czochralski (LEC) method 

diameter 2" orientation [100] or [111] 

• n-type : undoped (n≤ 10 17 cm -3 ; µ>2x10 4 cm 2 /Vs) 

• n-type : S (n=1x10 17 ÷ 5x10 19 cm -3 ; µ>3x10 3 cm 2 /Vs) 

• p-type : Zn (p=1x10 17 ÷ 5x10 19 cm -3 ; µ>80cm 2 /Vs) 


Tel.: (+48 22) 834 91 86; (+48 22) 835 30 41 ext. 170, 430 

Fax: (+48 22 ) 864 54 96; 

Contact person: Andrzej Hruban, Ph.D. 

e-mail: hruban_a@itme.edu.pl



Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22) 864 54 96 


AIIIBV compounds for semiconductor devices 

GaP 


diameter 2", 3" orientation [100] [111] or [110] 

• n-type : undoped (n≤ 3x10 16 cm -3 ; µ>140cm 2 /Vs) 

• n-type : S (n=2x10 17 ÷ 5x10 18 cm -3 , µ>90cm 2 /Vs) 

• p-type : Zn (p=5x10 17 ÷ 5x10 18 cm -3 ) 

• p-type : Cd (p=2x10 16 ÷ 3x10 17 cm -3 ) 

• SI : Cr (ρ>10 7 Ωcm) 

InP 



• n-type : undoped (n=5x10 17 ÷1x10 16 cm -3 ) 

• n-type : S, Sn (n=2x10 17 ÷1x10 19 cm -3 ) 

• p-type : Zn (p=5x10 17 ÷1x10 19 cm -3 ) 

• SI : Fe (ρ>10 7 Ωcm, µ>2x10 3 cm 2 /Vs) 

GaSb 

grown by Czochralski method 


• p-type : undoped (p≤ 2x10 17 cm -3 ; µ>600cm 2 /Vs) 

• p-type : Si (p>3x10 17 ÷ 1x10 19 cm -3 , µ>250cm 2 /Vs) 

• n-type : Te (n=1x10 17 ÷ 1x10 18 cm -3 ; µ>2500cm 2 /Vs) 

We offer materials in the form of: 

• single crystal ingots with stable diameter 2" ÷ 4" and required orientation , or 

, 

• substrate wafers of single crystals, oriented, one- or double-side polished, 

• single crystal seeds and other pieces with orientation and shape upon request, 

• high purity (6N, 7N) polycrystalline materials, 

• high purity (6N) metals: In, Te, Zn, Cu, Al, Bi and Sb, 

• boron trioxide (B 2 O 3 ) for LEC method. 

Our high purity and high quality materials meet the world standards. Basing on our materials many 

electronic devices such as: IC, FETs, MESFETs, DEL, laser diodes and other optical elements 

(mirrors and lenses) are made. 


Tel.: (+48 22) 834 91 86; (+48 22) 835 30 41 ext. 170, 430 

Fax: (+48 22 ) 864 54 96; 








MULTICOMPONENT EPITAXIAL SUBMICRON AND 

NANOMETER SCALE MOVPE HETEROSTRUKTURES 

OF III–V SEMICONDUCTORS 

The growth of various structures was developed applying binary, ternary and 

quaternary compounds related to GaAs, InP and GaN: GaAs, Al x Ga 1-x As, InP, In x Ga 1-x As, 

In x Ga 1-x As y P 1-y , In x Ga 1-x P, In x (Ga y Al 1-y ) z P, GaN/Al 2 O 3 , AlGaN/Al 2 O 3 Very high parameters of 

simple monolayers and sophisticated structures like low background, high mobility, ideal 

uniformity and repeatability, atomic scale growth rate, etc. have been achieved. Deposited 

layers as Super-Lattice structures, Quantum Wells (QWs), Strained Layers (SL) were applied 

in electron device fabrication, i.e. 2-DEG transistors, lasers and others. Epitaxial technology 

is also scaled up towards replacing traditional As and P gaseous sources with less toxic 

organics. 

Areas of application: 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

experimental physics; 

microelectronic devices (2-DEG transistors: 

GaAs/AlGaAs and InP/InGaAs/InAlAs); 

optoelectronic devices (laser, photodiodes, etc.). 

Epitaxial layers: 

single layer; 

multilayers epitaxial structures; 

epilayer with the designed profile of chemical composition; 

multi-quantum wells and superlattice structures; 

strained layers. 

EPITAXIAL LAYER THICKNESS: 

* from 1ML to 15μm; 

* radial thickness variation on the wafer: in the range of 1ML. 

The following methods are used for the characterization of layers: 

‣ X-ray; 

‣ Photoluminescence; 

‣ Hall method; 

‣ C-V profile; 

‣ Atomic Force Microscopy. (AFM) 


Tel.: (+48 22) 835 30 41 ext. 136,165 

Fax: (+48 22 ) 864 54 96; Fax.: (+48 22) 834 90 03 

Contact person: Włodzimierz Strupiński, Ph.D. 

e-mail: strupi_w@itme.edu.pl






SiC Wafers Polityp 4H 

4H-SiC 

4H-SiC 2” wafer 1” wafer 15x15 mm,10x10 mm, 5x5 mm 

Diameter (50.8 ± 0.25) mm (25.4 ± 0.25) mm 15x15, 10x10, 5x5 ± 0.25 mm 

Thickness (µm) 500±25 µm 500±25 µm 500-2000±25 µm 

Carrier Type n-type n-type n-type 

Dopant Nitrogen or Boron Nitrogen or Boron Nitrogen or Boron 

Resistivity (RT) 0.01 - 0.1 Ωcm 0.01 - 0.1 Ωcm 0.01- 0.1 Ωcm 

Micropipe Density ≤ 100 cm -2 ≤ 50 cm -2 ≤ 30 cm -2 

Dislocations Density ≤ 8x10 4 cm -2 ≤ 5x10 4 cm -2 ≤ 5x10 4 cm -2 

Edge exclusion 3 mm ----------- ---------- 

Usable area ≥ 80 % ≥ 90 % ≥ 95 % 

Wafer Orientation 

On axis ± 0.5° ± 0.5° ± 0.5° 

Off axis 2°, 4° or 8°± 0.5° 2°, 4° or 8°± 0.5° 2°, 4° or 8°± 0.5° 

Orientation flat orientation parallel {1 –1 0 0} ±5° parallel {1 –1 0 0} ±5° ---------- 

Orientation flat length (15.88±1.65) mm (7.5 ±1.0) mm ---------- 

Identification flat 

Si-face: 90° cw. from Si-face: 90° cw. from ---------- 

orientation 

orientation flat ±5° orientation flat ±5° 

Identification flat length (8.0 ±1.65) mm (4.0 ±0.75) mm ---------- 

Surface treatment 

Single or double face Single or double face Single or double face polished 

polished 

polished 

Surface Roughness < 0.3 nm ( Epi-ready); 






SiC Wafers Polityp 6H 

6H-SiC 

6H-SiC 2” wafer 1” wafer 15x15 mm,10x10 mm, 5x5 mm 

Diameter (50.8 ± 0.25) mm (25.4 ± 0.25) mm 15x15, 10x10, 5x5 ± 0.25 mm 

Thickness 500±25 µm 500±25 µm 500-2000±25 µm 

Carrier Type n-type or p-type n-type or p-type n-type or p-type 

Dopant Nitrogen or Boron Nitrogen or Boron Nitrogen or Boron 

Resistivity (RT) 0.01 - 0.1 Ωcm 0.01 - 0.1 Ωcm 0.01 - 0.1 Ωm 

Micropipe Density ≤ 80 cm -2 ≤ 50 cm -2 ≤ 30 cm -2 

Dislocations Density ≤ 8x10 4 cm -2 ≤ 5x10 4 cm -2 ≤ 5x10 4 cm -2 

Edge exclusion 3 mm ----------- ---------- 

Usable area ≥ 90 % ≥ 90 % ≥ 95 % 

Wafer Orientation 

On axis ± 0.5° ± 0.5° ± 0.5° 

Off axis 2°, 4° or 8°± 0.5° 2°, 4° or 8°± 0.5° 2°, 4° or 8°± 0.5° 

Orientation flat orientation parallel {1 –1 0 0} ±5° parallel {1 –1 0 0} ±5° ---------- 

Orientation flat length (15.88±1.65) mm (7.5 ±1.0) mm ---------- 

Identification flat 

Si-face: 90° cw. from Si-face: 90° cw. from ---------- 

orientation 

orientation flat ±5° orientation flat ±5° 

Identification flat length (8.0 ±1.65) mm (4.0 ±0.75) mm ---------- 

Surface treatment 

Single or double face Single or double face Single or double face polished 

polished 

polished 

Surface Roughness < 0.3 nm ( Epi-ready); 






MATERIALS FOR SOLID STATE LASER 

Yttrium aluminium garnet (Y 3 Al 5 O 12 ) single crystals doped with rare earths elements and/or 

chromium, neodymim doped yttrium orthovanadate (YVO 4 ) and calcium gadolinium oxyborate 

(Ca 4 GdO(BO 3 ) 3 ) for different laser applications and second harmonic generation (SHG). 

Crystal 

Lasing 

wavelength 

YVO 4 : Nd YAG: Co +2 

Ho, Tm, Cr: 

Y 3 Al 5 O 12 

(*) Er: Y 3 Al 5 O 12 Cr: Y 3 Al 5 O 12 Nd(1-2 at%): YVO 4 Ca 4 GdO(BO 3 ) 3 

2,13 μm 2,94 μm (**) 

1,064 μm 1,342 

μm 

Active ion Ho 0,36 at.% Er 3+ Cr 4+ 

10 17 ÷10 18 /cm 3 Nd 3+ 

Crystallographic 

[100] 

[111] [111] [111] 

orientation 

[001] 

SHG 

0,532 μm 

[010] 

Crystal structure Cuibc garnet Cuibc garnet Cuibc garnet Tetragonal Monoclinic 

Refractive index 1,80 1,80 

(λ=1,06) 

1,815 

(λ=1,06) 

n o =1,9573 

n e =2,1652 

Hardness (Mohs) 8,5 8,5 8,5 ~5 ~6,5 

Max. dimensions 

Diameter 20mm 

Length 80mm 

Diameter 20mm 

Length 80mm 

Diameter 20mm 

Length 80mm 

5x5x1÷10 mm 

Diameter 20mm 

Length 80mm 

(*) Er (1,5 at.%): YAG for 1,5μm are also grown. 

(**) For high power solid state passive Q-switch 


Tel.: (+48 22) 834 99 49 or (+48 22) 835 30 41 ext. 464; 

Fax: (+48 22) 864 54 96, Tel.: (+48 22) 834 90 03 

Contact person: Tadeusz Łukasiewicz, Prof. Dr Sc. 

e-mail : lukasi_t@itme.edu.pl






SUBSTRATES FOR HTSc LAYERS 

Single crystals of SrLaAlO 4 , SrLaGaO 4 , CaNdAlO 4 and NdGaO 3 are 

the attractive compounds used as substrates for the high temperature 

superconductor thin films. High quality YBaCuO, BiSrCaCuO, 

Bi(Pb)CaCuO and TlBaCaCuO thin films have been successfully grown on 

these substrates by different techniques. 

NEODYMIUM 

GALLATE 

STRONTIUM 

LANTHANUM 

ALUMINATE 

STRONTIUM 

LANTHANUM 

GALLATE 

CALCIUM 

NEODYMIUM 

ALUMINATE 

NdGaO 3 

SrLaAlO 4 

SrLaGaO 4 

CaNdAlO 4 

Crystal growth 

method 

Czochralski Czochralski Czochralski Czochralski 

Crystal structure orthorhombic tetragonal tetragonal tetragonal 

Lattice constant 

a = 0.5426 nm 

a = 0.3754 nm 

a = 0.3843 nm 

a = 0.369 nm 

b = 0.5496 nm 

c = 1.263 nm 

c = 1.268 nm 

c = 2.215 nm 

c = 0.7707 nm 

Max. wafer 

diameter 

2 inch < 1 inch < 1 inch < 1 inch 

Orientation [100]; [110]; [001] [100]; [110]; [001] [100]; [110]; [001] [100]; [110]; [001] 

Standard sizes max. Φ2 inch 10 mm x 10 mm 

15 mm x 15 mm 

10 mm x 10 mm 

15 mm x 15 mm 

10 mm x 10 mm 

15 mm x 15 mm 

Standard thickness 0,5 mm ÷ 1 mm 0,5 mm ÷ 1 mm 0,5 mm ÷ 1 mm 0,5 mm ÷1 mm 

Surface quality 

one- or both side 

epipolished 


epipolished 


epipolished 


epipolished 

Density 7,56 g/cm 3 5,924 g/cm 3 6,389 g/cm 3 5,527 g/cm 3 

Melting point 1750 o C 1650 o C 1520 o C 1860 o C 


Tel.: (+48 22) 834 99 49 or (+48 22) 835 30 41 ext. 464; 

Fax: (+48 22) 864 54 96, 

Contact person: Tadeusz Łukasiewicz, Prof. Dr Sc. 

e-mail : lukasi_t@itme.edu.pl






SAW QUARTZ SUBSTRATES 

Since 1993 the Institute of Electronic Materials Technology has joined outstanding 

family of quartz substrate producers developing seed-free 3-inch diameter SAW wafers. This 

document describes technical specification of standard single side polished AT-ST oriented 

Φ3" and Φ100mm α-Si0 2 substrates which are used for SAW resonators up to 1GHz 

frequency. For special applications ITME manufactures 3" wafers having non-standard cuts 

like 55T oriented seed free wafers and double rotated SC wafers with seed. In order to get 

microcomposition homogeneity, our substrates are produced from special oriented crystals, 

i.e. crystals that have the same or very similar orientation as prepared wafers. This feature can 

be very beneficial when substrates are used for sensors, because they are relatively large 

elements. We are open for cooperation if different shapes, dimensions and finish of plates are 

requested. 

Type of parameter Units Tolerance Value Value 

MACROSCOPIC PARAMETERS 

Diameter 

Thickness 

thickness variation of plate 

bow 

disorientation of ST-AT cuts 

(-X) reference flat width 

(-X) reference flat disorientation 

SURFACE MICROSCOPIC PARAMETERS 

(active face) 

face roughness (R a ) 

scratch length 

total length of scratches 

dig diameter 

number of digs 

depth or length of edge chip within 1.5 mm 

peripheral zone 

MATERIAL PROPERTIES 

bar type close to 

hardness 

twins 

α- coefficient 

inclusion diameter 

inclusion density 

mm 

mm 

mm 

mm 

arc min. 

mm 

arc min. 

nm 

mm 

mm 

mm 

count 

mm 

± 0.1 

± 0.05 

0.002 

0.002 

2 

± 2 

2 

nominal 

± 1 

± 1 

± 0.01 

1 

± 0.1 

α-units 0.01 

mm 0.01 

cm 3 average 

76.2 = 3" 

0.5 

< 0.020 

< 0.040 

< 20 

< 25 

< 15 

< 5 

< 5 

< 10 

< 0.2 






SYNTHETIC QUARTZ CRYSTALS 

Institute of Electronic Materials Technology has the pleasure to offer Synthetic Quartz 

Single Crystals manufactured by hydrothermal crystallization method. This material is used 

for fabrication of piezoelectric units and optical elements. Quality according to IEC 758. 

1. All bars are RH, free of twins and cracks. 

2. Inclusion density. 

Inclusion size 10 ÷ 30 μm 30 ÷ 70 μm 70 ÷100 μm > 100 μm 

maximum number of inclusions allowed per cm 3 

Class Ia 3 2 1 1 

Class I 6 4 2 2 

3. Grades: Grade 4 Q min 1.2 x 10 6 

Grade 3 Q min 1.8 x 10 6 

Grade 2 Q min 2.4 x 10 6 

4. In current production we grow the following type of bars. 

Type 

Orientation 

Bar dimensions 

Seed dimensions 

Z X Y Z s X s 

BBo − 60 Y ± 30' 60÷70 110÷120 190÷230 2±0.5 75±0.5 

BBo − 90 Y ± 30' 95÷100 115÷125 200÷230 2±0.5 60±0.5 

Z o − 90 Y ± 30' 90÷105 133÷143 200÷230 2±0.5 80±0.5 

Z o − 35 Y ± 30' 32÷37 46÷51 200÷230 2±0.5 32±0.5 

R − 33/80 ST ± 30' R 29÷35 100÷105 Y' 125÷150 Z'2±0.5 80±0.5 

R − 33/80 ST ± 30' R 29÷35 120÷130 Y' 135÷150 Z'2±0.5 104±0.5 

5. Starting with above types, we also offer a large variety quartz elements (plates, wafers, 

prisms) which can be predimensioned suitable to your needs. They can have different 

oriented faces, which can be lapped and polished. 


Tel.: (+48 22) 834 99 49; (+48 22) 835 30 41 ext. 480 

Fax: (+48 22) 864 54 96, 

Contact person: Władysław Hofman, M.Sc.






SUBSTRATE MATERIALS for GaN 

MIXED PEROVSKITE − (La, Sr) (Al, Ta) O 3 − LSAT 

‣ Crystal system: regular (mixed 

perovskite) 

‣ Lattice constant: a = 7.735 Å 

‣ Lattice mismatch: Δ < 1% 

NEODYMIUM GALLATE − NdGaO 3 

‣ Crystal system: 

‣ Space group: 

orthorombic 

Pbnm 

‣ Lattice constants: a = 5.4276 Å 

b = 5.4979Å 

c = 7.7078Å 

‣ Lattice mismatch : Δ ~ 0,7% (101) 

SAPPHIRE − Al 2 O 3 

‣ Crystal system: trigonal 

‣ Space group: 

R 3cH 

‣ Lattice constants: a = b = 4.7589 Å 

c = 12.991 Å 

‣ Lattice mismatch: Δ ∼14% 


Tel.: (+48 22) 834 99 49 or (+48 22) 835 30 41 ext. 464; 

Fax: (+48) 864 54 96 

Contact person: Tadeusz Łukasiewicz, Prof. 

e-mail: lukasi_t@itme.edu.pl


Wólczyńska 133 str., 01-919 Warsaw, POLAND 




CERAMICS AND SEALS TECHNOLOGY 

MATERIAL CHARACTERISTICS: 

PURE ALUMINA CERAMICS 

Pure alumina ceramics due to their high insulation resistance at elevated temperatures, high 

dielectric strength, low dielectric loss tangent at high frequencies is one of the best dielectric 

materials available for use in applications requiring electrical insulation. 

The mechanical strength of pure alumina ceramics may be extremely high if properly controlled by 

the size and homogenity of the constituent crystallites. It is recommended to use ceramics in 

compression because compressive strength is nearly 10 times that of the flexural strength. This 

may be achieved through design or by the establishment of operating conditions. 

Thermal and chemical propertes of pure alumina ceramics are always of great interest. Thermal 

conductivity is nearly equivalent to stainless steel. Pure alumina ceramics is inert to oxidation, not 

corroded by chemical agents and not subjected to radiation damage. 

APPLICATIONS: 

Pure alumina ceramics can be applied to: 

mechanical seal faces, 

nozzles for abrasives spraying corrosive reagents, 

high pressure liquid media, 

laboratory apparatus components, 

metallized parts of high vacuum and high-voltage feed-through, 

and many other applications. 

NOTE: Dimensions of ceramic parts on customer's request. 

PARAMETER 

Value 

Multiplicator 

Al-95 Al-97 Al-99 

Unit 

Al 2 O 3 content 95 97.5 99.5 % 

Apparent density 3.7 3.7 3.8 g/cm 3 

Modulus of rupture 240 280 240 MPa 

Dielectric strength 10 10 kV/mm 

Dielectric constant for "S" 

band and 293K 9 9.5 10 +0.4 

Volume resistivity at 293K 10 12 10 12 Ωcm 

Linear expansion coeff. 

 

 

293÷373K 

293÷873K 

5.6÷6.0 

6.5÷7.5 

5.0÷7.0 

7.0÷8.0 

5.0÷7.0 

7.0÷8.5 

10 -6 

10 -6 1/K 

1/K 

Thermal shock resistance 160 160 K 

For more information please contact: Fax: (+48 22) 864 54 96; Fax: (+48 22) 834 90 03 

Contact person: 

Zdzisław Librant, Ph.D. Tel.: (+48 22) 835 30 41 ext. 150, 479, 143, e-mail: libran_z@itme.edu.pl 

Henryk Tomaszewski, Ph.D. Tel.: (+48 22) 835 30 41 ext. 472, e-mail: tomasz_h@itme.edu.pl 

Wiesława Olesińska, Ph.D. Tel.: (+48 22) 835 30 41 ext. 479,







YTTRIA CERAMICS 


Pure yttria melts at 2703 K; its theoretical density is 5.01 g/cm 3 . Yttria ceramics (purity of 

4N) having properties close to those of theoretical was developed in the Institute of Electronic 

Materials Technology . 

APPLICATION: 

High melting temperature and chemical resistance to agressive media give rise to 

application of yttria ceramics as structural materials at high temperatures and corrosive 

environment. Ceramic crucibles used in crystallization processes of superconducting 

compounds are good examples of such aplication. High purity yttria crucibles are also used in 

the process of YBaCuO monocrystallization as a source of yttria. 

Following shapes and dimensions of yttria crucibles are offered: 

1. cylindrical: 

a) internal diameter: 4.0 mm, hight: 3 mm, 

b) internal diameter: 8.0 mm, hight: 50 mm, 

c) internal diameter: 15.0 mm, hight: 70 mm, 

2. conical: 

a) internal diameter: 55/28 mm, hight: 50 mm. 

The walls of crucibles are approximately of 1 mm thick. 

Another dimensions and wall thicknesses are also available according to the order of 

customers. 

ZIRCONIA CERAMICS 


Yttria stabilized zirconia subjected to special thermal treatment is transformed into 

tetragonal form stable at room temperature. This type of ceramics (called TZP -Tetragonal 

Zirconia Polycrystal) has superior resistance for fracture. Other mechanical properties such as 

strength, modulus of rupture, grinding resistance are also very good. TZP ceramics is 

antimagnetic, antistatic, chemically inert (with the exception of hydrofluoric acid). 

BASIC PROPERTIES: 

Zirconia contents: 94 % 

Density: 6,1 g/cm 3 

Bending strength: 

400 MPa 

Grindability: 

0,01 mm 

Fracture toghness (K Ic ): 10 MN m -3/2 













CERAMIC-METAL FEED-THROUGH 

Ceramic parts are made of pure alumina containing over 97% Al 2 O 3 . Metallic parts are made of FeNi42, kovar, 

copper and aluminium. AgCu28, AgCu21Ni alloys, silver and copper are applied as a braze depending on 

operating or assembling conditions. Permanent assembling with apparatus or devices is carried cut by soldering 

or welding. Metallic flanges may be also designed to enable the multiple assembling and disassembling with 

apparatus or devices. 

APPLICATIONS: 

Ceramic-metal feed-through are widely used in terminals of various type of vacuum or high-voltage equipment 

i.e. nuclear technique apparatus, ion accelerators, pressurised containers and others. 

TECHNICAL DATA: 

Insulation resistance: 

min. 10 10 Ω 

Working voltage: 

min. 3 kV 

Leakage (helium detection): 1,33x10 -8 Pam 3 s -1 

Thermal resistance (depending 

on the kind of braze and atmosphere): 770÷1120 K 

Continous working temperature: max. 570 K 

Thermal shock resistance: 

in gas environment 

208÷473 K 

in liquid environment 

273÷373 K 

Pressure strength: 

max. 10 MPa 

special performance 

max.100 MPa 

NOTE: Dimensions of metallic and ceramic parts on customer's request. 


COMPOSITE CERAMICS Al 2 O 3 -ZrO 2 

(Abrasive resistance) 

Alumina - zirconia composite ceramics was developed for applications where very high strength and excellent 

abrasive resistance in required e.g. for cutting tools, nozzeles for abrasives spraying and others. 

APPLICATIONS: 

1. Ceramic cutting tools are produced in the form of multiblade inserts, 4.76 and 7.94 mm thick 

respectively. They are designed for the moderately accurate and finishing turning of both carbon 

steel and cast iron having a hardness value up to 260 HB. The production of ceramic multiblade 

inserts is performed with the cooperation of the Institute of Metal Cutting. 

2. Ceramic nozzles for abrasives spraying. 

TECHNICAL DATA: 

Alumina content: 90 % 

Bulk density: 4.1 g/cm 3 


400 MPa 

Young's modulus: 

380 GPa 

Fracture toughness K k : 8.0 MPa m 1/2 

NOTE: Dimensions, shapes and surface finishing subject to customer specification on request. 












Alumina-copper direct bonding substrates 

CHARACTERISTICS: 

Alumina-copper direct bonding substrates are compound materials consisting of alumina 

plates and copper foil (0,1 ÷ 0,3). 

Alumina-copper direct bonding substrates - " CDBsubstrates " posses an extraordinary good 

thermal conductivity, which makes them suitable for use as a base for all power electronics 

applications. 

A high strength of copper-alumina joints is formed as a result of hyper-eutectic bond. 

Thermal expansion coefficient of CDB substrates is very similar to that of alumina since the 

alumina plates effectively control the expansion of Cu-Al 2 O 3 -Cu compounds. Thus direct 

bonding of silicon chips to CDB substrates is possible without the use of molybdenum disks. 

TECHNICAL DATE: 

Alumina 96,0 or 99,6% Al 2 O 3 , 

Standard thickness of alumina plates 0,63 mm, 

Thickness of copper foil 0,1 ÷ 0,3 mm, oxygen free (OFHC - Cu), 

Copper tear strength - "peel test" 25 ÷ 100 MPa (dependant on application), 

Maximum working temperature 1.123K (850 o C), 

Thermal expansion coefficient of CDB substrates ca 7,3 x 10 -6 K -1 , 

Thermal conductivity of alumina 24 ÷ 28 W x m -1 x K -1 , 

Thermal conductivity of copper 385 W x m -1 x K -1 , 

Dielectric constant of alumina 9 ÷ 10, 

Volume resistivity of CBD substrates at 473 K (200 o C) 10 12 Ohm x cm 

Absolutely non toxic. 

APPLICATIONS: 

 

 

 

 

 

 

Power Semiconductor Modules, 

High Power Circuits, 

Trasnsistors, 

Rectifier Bridges, 

Thyristors, 

Automobile Electronics. 












CERAMICS BLADE ADJUSTMENT TOOLS 

A good example of application of TZP ceramics is antistatic tip of screwdriver as adjustment 

tool for electronics. Ceramic blade tools are intended for the precision adjustment of variable 

capacitors, inductors and resistors in applications where there are stringent requirements for 

minimum dielectric and eddy current loses resulting from contact with the non-static insulating 

tip. 

There are particulary suited for surface mount components. The ceramic tips are durable and 

display excelent resistance to: solder adhesion, mechanical wear, cracking, thermal cycling 

and acid corrosion (with the exception of hydrofluoric acid). The ceramic blade adjustment 

tools which are manufactured by the Institute of 

Electronic Materials Technology (ITME), are avaible 

in six versions: 

flat blade 0.9 x 0.4 mm, 




cross point, 

truncated cross point. 

COMPOSITE CERAMICS Al 2 O 3 -ZrO 2 

(Thermal shock resistance) 


Alumina - zirconia composite ceramics was developed for applications where high resistance 

for cyclic thermal shock is required e.g. for assembling of glass and metal parts in technology 

of TV picture tubes (pinchucks). 

APPLICATIONS: 

Parts of apparatus or devices exposed to severe heat fluxes and rapid temperature changes. 

TECHNICAL DATE: 

Alumina content: 85 % 

Thermal shock resistancei.e. parametr R, ΔT: 1000 K 

Bulk density: 4.2 g/cm 3 


110 MPa 

Young's modulus: 

240 GPa 

Facture toghness K Ic : 2.9 MPa m 1/2 

NOTE: Dimensions, shapes and surface finishing subject to customer specification on request. 








Tel.: centr. (+48 22) 835 30 41÷ 49, Tel/Fax: (+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 



TRANSPARENT CERAMICS 

Yttrium aluminate garnet (Y 3 Al 5 O 12 ,YAG) doped with Nd is one of the major laser materials. Single 

crystals of YAG are normally synthesized by the Czochralski method. However, this method is 

expensive, and it is difficult to produce large size YAG single crystals. In recent years, a lot of efforts 

have been made for synthesizing transparent polycrystalline YAG ceramics. Transparent polycrystalline 

YAG ceramics have the advantages of low price, ease of manufacture and mass-production, the 

possibility of making large sized crystals, and the possibility of the incorporation of Q-switching and 

Raman shifting within the source. 

The main advantage of polycrystalline yttria (Y 2 O 3 ) and magnesium aluminate spinel (MgAl 2 O 4 ) 

ceramics compared with single crystals lies in the fabrication process, because densification of particulate 

solids by sintering takes place at temperatures well below melting temperature. However, in order to 

achieve a high degree of transparency full elimination of internal porosity is necessary. 


Zdzisław Librant Ph.D. 

e-mail: zdzislaw.librant@itme.edu.pl


ul. Wólczyńska 133, 01-919 Warszawa 




GLASS LABORATORY 

Research and development activity of our laboratory mainly includes the elaborating of synthesis and 

melting methods of different types glasses for optics, electronics and optoelectronics. We are specialized 

now in following areas of the fiber optic manufacturing: 

‣ designing and melting of the different kinds of optical and technical glasses, 

‣ casting of glass blocks and tubes (e.g. tubes made of EMA type „black glass”), 

‣ mechanical shaping of glass through cutting, surrounding, grinding and polishing methods, 

‣ thick wall glass tubes manufacturing and the next changing of their cross-section, shape, wall thickness, 

diameter etc., 

‣ pulling of different kinds and shapes optical rods, multicore fiber optic rods, optical fibers, 

‣ manufacturing of fiber optic light and image guide structures (e.g. tips for dentist lamps, tapers, fiber 

optic face plates, specialized light guide bundles, including quartz fiber). 

The main types of glasses manufactured in our Laboratory are given in table below. 

On the further pages we present some of our glass products. 

No. Glass type Basic properties Forms of supply Possible applications 

1. Low dispersion, 

low- or non-silicate 

tantalum-niobiumlanthanum 

LaSF 

type 

2. Low dispersion 

zirconium-silicate 

3. Low refractive 

index alkaline 

boro-silicate BK 

type 

-Refractive index n d = 1,78÷1,85. 

-Thermal expansion coefficient α for the 

temperature range 20÷300 o C: 

65÷70 or 90÷95*10 -7 K -1 . 

-Transmission: no less than 80% (λ=0,45÷2,3μm., 

d=10mm). 

-Short wavelength absorption edge (0% 

transmission): λ=300÷350nm. 

-Refractive index n d = 1,58÷1,62. 

-Average dispersion n F -n C = 0,01202±0,00005. 

-Thermal expansion coefficient for the range 

20÷300 o C: 86÷92*10 -7 K -1 . 

-Transmission: higher than 90% in VIS and NIR 

range for thickness 10mm. 

-Short wavelength absorption edge 280÷300nm. 

-High chemical resistance, in particular against 

alkaline. 

-Refractive index: n d =1,46÷1,53. 

-Average dispersion n F -n C = 0,0075÷0,0085. 

-Thermal expansion coefficient α= 64÷68*10 -7 K -1 

or 86÷90 *10 -7 K -1 for coefficient for the range 

20÷300 o C. 

-Transmission: no less than 92÷95% in VIS i NIR 

range up to 2,0μm for thickness 10mm. 

-Short wavelength absorption edge: 

λ=250÷280nm. 

-Blocks: max. 

500x200x60mm. 

-Rods: max. 50mm in 

diameter, max.500mm length. 

-Gobs (hot formed pieces): 

cross section round or 

angular. 

-Blocks: max. 

500x200x60mm. 

-Rods round and rectangular 

shape, grinded and polished: 

max. diameter 50mm, max. 

length 500mm. 

-Blocks: max. 

500x200x60mm. 

-Slabs and gobs. 

-High wallthickness tubes for 

further thermal treatment 

(shaping, profiling, resizing, 

callibration, wall thinning and 

s.o.): 

-inner diameter − 16÷20mm, 

-outer diameter − 30÷40mm, 

-length − 350÷400 mm. 

-Optical components in 

conventional optics (plates, 

prismes, lenses). 

-Rods of core glasses for fiber 

optics (fiber optic face plates 

for passive electronic image 

intensifiers; fiber optic tapers). 

-Conventional optics. 

-Rods for fiber optic technology 

(optical fibers, light and image 

guide multifiber integrated rods 

for dental lamps, laser devices, 

endoscopes). 

-Cladding glass for fiber optics 

manufacturing (fibers, 

multicore rods). 

-Conventional optics. 

4. High VIS 

absorption black 

EMA type 

-Very hig absorption (Extra Maral Absorption) in 

visible range of wavelength. 

-Thermal expansion coefficient 

α= 60÷65*10 -7 K -1 or 82÷88 *10 -7 K -1 for 

20÷300 o C. 

-Small slabs and gobs. 

-Tubes: inner diameter − 

16÷35mm, 

outer diameter − 20÷45mm, 

length − 350÷1000 mm. 

-VIS absorbing and NIR 

transmitting optical filters. 

-Absorbing glass in fiber optics 

manufacturing (face plates, 

tapers, endoscopes).






5. Solarization 

resistant borosilicate 

6. Soda-lime, 

alkaline-silikate, 

boro-silicate, 

borate colored by 

transition (heavy) 

metal and/or rare 

earths metal oxides 

7. Phosphate and 

lead-phosphate 

doped by transition 

metal and/or rare 

earths metal oxides 

-Refractive index: n d =1,5475±0,0005. 

-Abbe value ν d =51,3±0,3. 

-Average dispersion n F -n C = 0,0088÷0,0003. 

-Thermal expansion coefficient: 

α=74,6±0,3*10 -7 K -1 for 20÷300 o C. 

-High resistance against UV and γ irradiation. 

-Colored glasses characterized by wide or 

selective absorption bands spectral 

characteristics. 

-Main dopants: Co, Ni, Cu, Fe, Cr, Mn, Ti, V, Nd, 

Er, Pr 

Glasses doped by Co, Ni, Cu, Fe, Cr, Mn, Ti, V, 

Nd, Er, Pr, Yb. 

-Blocks: max. 500x200x60mm. 

-Slabs: max. 240x180x50mm. 

-Plates: max. 500x 60x2÷20mm. 

-Rods: max. 500x50mm. 

-Slabs, gobs, plates different 

sizes and shapes. 

-Filters: max. 100x100x1÷5mm, 

max. diameter 100mm. 

-Slabs, gobs, plates small 

diamensions. 

-Rods: diameter 3÷15mm, length 

up to 150mm. 

-Filters: max. 50x50xx2÷5mm, 

max. diameter 50mm. 

-Special (military) applications 

in optical devices (lenses, 

prismes, plates). 

-Filters for VIS and NIR 

regions of radiation. 

-Filters for VIS and NIR laser 

rods (e.g. Yb-Er-Crphosphate 

glass for „eye safe” 

1,53÷1,55μm lasers) 

8. High VIS and IR 

transmission 

fluoride ZBLAN 

type 

9. Fluoride ZBLAN 

type doped by rare 

earths metal ions 

-Glasses synthesized on the base of very pure and 

O 2- , OH - free fluorides: ZrF 4 , BaF 2 , LaF 3 , AlF 3 , 

NaF. 

-High transmitance in VIS and NIR regions (up to 

6μm.). 

-Main dopants: Nd, Er, Pr. 

-Spectral characteristics: see Fig.5. 

-Laser properties: 1,06; 1,35; 1,54μm. 

-Rods: diameter 10mm, 

length up to 10mm. 

-Window plates: diametetr up to 

10mm. 

-Rods: max. diameter 10mm, 

max. length 100mm 

-Windows for NIR range of 

radiation. 

-Laser rods. 

-Optical active fibers - laser 

fibers. 

-Fiber intensifiers. 

10. Heavy Metal 

Oxide (HMO) 

synthesized in 

oxide system PbO- 

Bi 2 O 3 -Ga 2 O 3 

-Transmision in the range: 

a) 0,6÷2,7μm − 65÷75%, 

b) 2,7÷4,0μm − > 40%, 

c) 4,0÷6,0μm − 55÷65% for 2mm (see Fig.6). 

-Short wavelength absorption edge − 465±5nm. 

-Long wavelength absorption edge − 8,0±0,1μm. 

-Refractive index − 2,35÷2,50. 

-Thermal expansion coefficient − 115±5*10 -7 K -1 

for 20÷300 o C. 

-Transformation temperature − 340±10 o C. 

-Density − 7,95±0,10g/cm 3 . 

-High Verdet constant − 15,5 ÷32,5*10 4 min/T*m. 

-Non-linear optical properties. 

-Slabs, gobs, plates. 

-Windows plates: grinded and 

polished, max. 

50x50x3÷10mm. 

-Filters in biomedical devices 

for IR stimulation. 

-Input windows for IR sensors 

We offer scientific and technological cooperation. 

We can provide custom-prepared materials too. 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 

Contact person: Ryszard Stępień, Ph.D. 

e-mail:stepie_r@itme.edu.pl






GLASS FIBERS OPTIC PRODUCTS FOR 

SENSOR SYSTEMS 

Glass Laboratory of ITME offers many different glassy fiber products, which can 

be used as active components in sensor systems. Among these are: 

Polymer clad silica (PCS) optical fibers 

Their technical characteristics is as follows: 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

core: high purity silica glass, 

primary coating: polymer (silicon), 

secondary coating: polymer (acryl), 

step index profile, 

core diameter: 200÷1100μm (according to 

customer request), 

fiber diameter: 350÷1500μm, 

maximum length: 2000m. (for 200μm core 

diameter), 

spectral transmission: 250÷2600nm, 

numerical aperture (NA): 0,10÷0,35, 

attenuation: ~15dB/km, 

Light guide multifiber bundles 

Light guide multifiber bundles made of silica 

glass (PCS) or multicomponent silicate 

glasses (PCG): 

‣ 

‣ 

‣ 

‣ 

diameter of individual fibers: 100÷1000μm, 

number of fibers and bundle diameter (on 

request): typical diameter 1÷10mm, 

length: 0,5÷50m, 

spectral transmission: 

250÷2600nm (PCS), 

400÷2500nm (PCG).






Integrated fiber optic light- and imageguide structures 

Tabele 1. Rigid light and image guides 

Outer 

diameter 

[mm] 

1,5 

1,7 

2,5 

3,0 

6,0 

Pixel diameter 

min. [μm] 

15 

20 

20 

25 

50 

Length 

max. [mm] 

Numerical 

Aperture (NA) 

Active 

area 

[%] 

1000 0,5÷0,6 50÷80 

Tabele 2. Semi-flexible image guides 

Outer diameter 

with jacket [mm] 

Image guide Pixel diameter 

diameter [mm] [μm] 

Bending 

radius [mm] 

Length 

max. [mm] 

NA 

Active 

area [%] 

1,25 1,0 10÷20 200 1500 0,5÷0,6 50÷80 

Special purpose mosaic optical fibers 

Special purpose mosaic optical fibers manufactured by our new developed fiber 

assembling technology from high purity multicomponent glasses. 

We propose the following types of this fibers: multicore; with shaped noncircular 

cores; with segmented cores; attenuation and/or modulating possibilities, active 

amplifying, with nonhomogeneous cores and claddings; with air holes (capillaries) 

frozen into the fiber structure, made of highly specialized glasses, etc. 

This fibers are the optimum candidates for system design to meet devices and 

sensors needs of optoelectronic systems working in any kind of hostile 

environments. 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 








GLASS FILTERS FOR DENTIST 

POLYMERIZATION LAMPS 

MATERIAL: 

Heat absorbing multicomponent phosphate glass 


Light transmission T=80÷85% for the range 400÷500nm and 2mm of thickness 

(see Figure); light corrective layers deposited on one side and heat reflecting 

layers on the other; minimized heat transmission; high thermal shock resistant 

(tempered glass) 

DELIVERY FORM: 

Round disks 16,5, 15 or 12mm in diameter; thickness 2mm; other dimensions on 

customer′s request 

APPLICATIONS: 

For light correction and heat absorption in dentist polymerization lamps 

Filter′s spectral characteristics 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 









‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

‣ 

FIBER OPTIC LIGHT GUIDE RODS 

MATERIAL: 

Lead and cadmium free multicomponent silicate glasses 

white light transmission T=80÷85% for length 80mm; 

numerical aperture NA=0,55; 

glass optical protective layer on the side surface of the rod made of black Extra 

Mural Absorption (EMA) glass; 

diameter Φ=3÷10mm; 

length L=30÷200mm; 

bending radius α=0; 15; 30; 45; 60; 90; 180 grad; 

rod tip tapering 2÷3x on the length 20÷30mm; 

quick-change holder: material, shape and dimensions – according to the 

requirement customer; 

ability to repeated sterilization without optical and mechanical properties 

degradation 

DELIVERY FORM -RODS: 

‣ with/without bending or tapering; 

‣ with/without holder; 

‣ with polishing endfaces 

APPLICATIONS: 

‣ as light guide applicators in different type 

dentistry polymerization lamps and laser 

devices for biostimulation (λ=400÷2300nm); 

‣ as light concentrators 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 




133 Wólczyńska str, 01-919 Warsaw, Poland 




LIGHT GUIDE APPLICATORS FOR SURGICAL 

PHOTON COAGULATOR 

Photon coagulators enable so called „coagulation welding” of surgery cuts as well as accelerates healing 

of wounds, reduces the output of noxious healing products, reduces probability of cancer metastasis. 

1. Electronic power supply unit with special 

timer; pulse duration 1 up to 9 seconds or 

continuous work 

2. Coagulator light head with tungsten-halogen 

bulb with a gold-plated reflector (OSRAM 

XENOPHOT HLX 150W); maximum spectral 

power density at about 1100nm 

3. Light guide rod/applicator: glass rod in a 

metal housing, 70÷350mm long and 5÷15mm 

in diameter, depending on a specific 

application. Min. light power measured at the 

output end of applicator′s rod (250mm long 

and 10mm in diameter): 28W. 

4. Foot switch 

Outer Length Applicator′s 

diameter 

type 

[mm] 

[mm] 

φ 8 φ 10 350 straight 14 

Light guide 

active area 

[mm] 

φ 8 φ10 250 

φ 10 φ 13 250 

φ 15 φ 18 250 

Light power 

transmission 

min. [W] 

straight 15 

bent 30 0 13 

bent 60 0 11 

straight 28 

bent 30 0 25 

bent 60 0 20 

straight 45 

bent 30 0 40 

bent 60 0 32 

APPLICATIONS: therapeutical treatment and surgery, for instance to close blood vessels and to staunch 

blood from surgery cuts, in gynecology, proctology, dermatology, soft-surgery, dentistry, laryngology. 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 

Contact person: Ryszard Stępień, Ph.D. e-mail:stepie_r@itme.edu.pl;






ACTIVE FLUORIDE GLASSES (1/2) 

Luminescence intensity [a.u.] 

1,2 

1 

0,8 

0,6 

0,4 

0,2 

0 

0,3 0,6 0,9 1 1,2 2 5 

Dopant concentration [mol%] 

Nd 

Er 

Life time [us] 

800 

700 

600 

500 

400 

300 

200 

100 

0 

0.3 0.6 0.9 1 1.2 2 5 

NdF3 concentration [mol%] 

Life time [ms] 

14 

12 

10 

8 

6 

4 

2 

0 

0.3 0.6 0.9 1 1.2 2 

ErF3 concentration [mol%] 

APPLICATIONS 

• in telecommunication, optoelectronics, 

medicine, and environment protection 

• fiber lasers, upconversion laser systems, 

amplifiers operating mainly at 1064 nm and 

1550 nm 

• in telecommunication to obtain amplification 

of radiation for wavelengths of 0.8 μm 

1.06 μm, 1.3 μm, and 1.54 μm 

(telecommunication windows of minimal 

attenuation for silica being the most 

frequently used as fibre transmitting medium) 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 








ACTIVE FLUORIDE GLASSES (2/2) 

No 

Dopant 

concentration 

[mol %] 

Luminescence 

intensity 

[a.u.] 

Luminescence 

life time 

1 2 3 4 

ZBLAN+NdF 3 

1. 0,3 400 493 μs 

2. 0,6 650 483 

3. 0,9 830 479 

4. 1,0 920 482 

5. 1,2 1000 460 

6. 2,0 830 387 

7. 5,0 340 181 

ZBLAN+ErF 3 

1. 0,3 350 6,54ms 

2. 0,6 560 6,85 

3. 0,9 720 7,07 

4. 0,9 750 7,00 

5. 1,0 780 6,90 

6. 1,2 850 7,13 

7. 2,0 1000 7,20 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 








HIGH NON-LINEAR REFRACTIVE INDEX GLASS 

APPLICATIONS 

For the manufacturing of: *photonic microstructures PCF (Photonic Crystal Fiber) type with nonlinear properties; 

*nonlinear photonic fi bers with supercontinuum generation possibility 

MATERIALS 

PBG-08 lead-bismuth-silicate glass, synthesized in SiO 2 -Ga 2 O 3 -Bi 2 O 3 -PbO-CdO oxide system, with high resistance 

against recrystallization during repeated thermal treatment 

PROPERTIES 

- spectral transmission (as show in figures below) 

PBG-08 glass, d=2mm 

PBG-08 glass, d=2mm 

TRANSMISSION T [%] 

90 

80 

70 

60 

50 

40 

30 

20 

10 

TRANSMISSION 

0,9 

0,8 

0,7 

0,6 

0,5 

0,4 

0,3 

0,2 

0,1 

0 

2,5 3 3,5 4 4,5 5 5,5 

WAVELENGTH λ [µm] 

0 

200 700 1200 1700 2200 2700 3200 

WAVELENGTH λ [nm] 

- transmission T in the range 0,6÷2,75µm 75÷85% 

- transmission T in the range 2,75÷4,4µm 65÷75% for 2mm of thickness (see figures) 

- refractive index n d 1,94±0,005 

- nonlinear component of refractive index n 2 >4,1·10 -19 m 2 /W 

- low threshold of absorption LTA 390±10nm 

- upper threshold of absorption UTA 5,3±0,1µm 

- linear thermal expansion coefficient α 81,5±1*10 -7 K -1 (for 20÷300 o C) 

- low temperature of annealing t d 435±10 o C 

- transformation temperature T g 470±10 o C 

- upper temperature of annealing t g 480±10 o C 

- dilatometer softening temperature DST 500±10 o C 

- density ρ 5,80±0,1g/cm 3 

- micro hardness HV 4,6±0,3Gpa 

- water resistance WR 5,2±0,1mg/100cm 2 (H 2 O 100 o C, 6h) 

DELIVERY FORM 

Glass blocks with dimensions max 300x60x30mm; rods max. 300x28x28mm; round rods with Φ max =28mm; tubes 

L=300mm, Φ outer =40mm, Φ inner =26mm; small rods, tubes and capillaries with dimensions on customer request 

DELIVERY TERM 

2÷3 weeks from order date 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 








MULTICAPILLARY GLASS PLATES 

APPLICATIONS 

• gas and liquid filtration, 

• flow control, laminar flow, 

• construction of velves with ultraslow flow, 

• liquids nebulization, 

• focusing / collimating components, 

• particle channeling components, 

• biotechnology micro pore components, 

Scheme of micro capillary structure 

MATERIALS 

Borosilicate glass Multicomponent Glassem 

TECHNICAL PARAMETERS 

Outside diameter 

Thickness 

Holes diameter 

5-18mm 

1-5mm 

4-20µm 

Quantity of holes up to 5000 

Shape of working zone hexagon, square, rectangular (max 4:1) 

Thermal resistance 400°C 

SHAPE OF PRODUCT 

1. Glass rods with multicapillary structure 

2. Multicapillary plates cut to ordered thickness 

DELIVERY TERM 

4-6 weeks from order date 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 

Contact person: Dariusz Pysz, M.Sc. 

e-mail:dariusz.pysz@itme.edu.pl






All-solid PCF 

A photonic crystal fiber can be developed with two thermally matched glasses where one glass 

forms the background, and the others create a lattice of inclusions (Fig.1). Optical properties of 

all-solid holey fibers (SOHO) are sensitive to the photonic cladding configuration, as typical 

PCFs with air holes, and strongly depend on dispersion properties of used materials. When a 

high index contrast between the glasses is assured photonic crystal fiber can effectively guide 

light with photonic band gap (PBG) mechanism. 

Fig.1 Guidance mechanisms in solid-all PCFs: if micro rods have lower refractive index than matrix 

glass – guidance with effective total internal reflection mechanism (TIR) and also photonic band gap 

guidance mechanism is possible (PBG); if micro rods have higher refractive index than matrix glass – 

only photonic band gap guidance mechanism is possible (PBG). 

Two examples of fibres fabricated in ITME are presented in Fig.2 and Fig.3. 

Fig.2 All-solid PCF with low index core - fiber diameter ~130μm, lattice pitch Λ=1.06μm, 

microrods diameter d≈0.67μm, filling factor d/Λ ≈ 0.63, core diameter d core ≈3.4μm. 

Fig.3 All-solid PCF with low index core - fiber diameter ~100μm, lattice pitch Λ=0.81μm, 

microrods diameter d≈0.58μm, filling factor d/Λ≈0.71, core diameter d core ≈2.1μm 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 








All-solid PCF 

1200 

120 

1000 

100 

800 

80 

600 

60 

400 

40 

200 

20 

0 

0 

-200 

350 400 450 500 550 600 650 700 

-20 

350 400 450 500 550 600 650 700 

Fig.4 Spectral characteristic of light source and measured transmission through core of 

sample of all-solid PCF with diameter ~130μm in bend gap 

Another example of fabricated fiber: 

SOHO3/J 1 (1) SOHO3/ J 1 (3) SOHO3/ J 1 (5) 

Fig.5 End faces of several samples of fabricated all-solid fiber (SOHO3/J1) - visible 

geometrical stability of microstructure along the fiber on length 100m 


Tel.: (+48 22) 835 30 41 ext.456; Fax/Tel.: (+48 22) 834 90 03, 

Fax: (+48 22) 864 54 96, 





Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 


THICK – FILM TECHNOLOGY 

THICK – FILM COMPOSITIONS 

Institute of Electronic Materials Technology (ITME) is the main polish 

producer of thick-film materials applied in thick film technology for more than 

twenty years. 

Thick-Film Materials Division offers the wide range of: 

‣ conductive, resistive, crossovers pasts, 

‣ overglazes and other compositions for producers of microcircuits, 

‣ polymers and thick film materials, 

which could be applied not only in electronics. 

Table on page 2 shows the main offer of thick film materials produced by ITME. 

Also new versions of thick-film compositions, due to individual customers 

requirements could be offered. Small amounts of experimental material samples 

and conduction of application experiments concerning thick film technology due to 

customer’s request could be offered, as well. 

More information is available from ITME 

Thick-Film Materials Division 

Tel.: (+48 22) 835 30 41 ext. 457 

Fax: (+48 22) 864 54 96; Fax: (+48 22) 834 90 03 

Contact person: Małgorzata Jakubowska, Ph.D. 

e-mail: maljakub@itme.edu.pl



Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22) 864 54 96 e-mail: itme@itme.edu.pl 

Table 1. Thick-Film materials produced by ITME 

Symbol of the paste Examples of application 

Firing/Curing 

temperature Parameters 

Resistive pastes series R-320 resistors and potentiometers 850 o C 

R/ - 30÷10 6 Ω/ 

TCR – 250 ppm/ o C 

Resistive pastes series R-340 resistors and potentiometers 850 o C 

R/ - 10÷10 6 Ω/ 

TCR – 100 ppm/ o C 

Palladium-silver conductive paste conductive layers, 

850 o C 

R/ - 20÷35 mΩ/ 

P-202 

resistors terminations 

solder SnPb - 220-270 o C 

Platinum-silver conductive paste 

conductive layers, 

850 o C 

R/ - 3÷5 mΩ/ 

P-401 

resistors terminations 

solderable, bondable 

Silver conductive paste P-120 conductive layers 650÷850 o C R/ - 3÷5 mΩ/ 

Gold conductive paste P-303 

conductive layers, 

850 o C 

R/ - 5÷10 mΩ/ 

bondable pads 

bondable 

Platinum conductive paste P-321 heating elements in sensors 850÷1050 o C 

R/ - 40÷100 mΩ/ 

TCR - 3600÷4000 ppm/ o C 

Dielectric paste D-421 crossovers 850 o C compatible with P-303 and P-202 

Protective paste D-202 protection of resistors 540÷560 o C compatible with R-320 and R-340 

Nickel conductive paste P-727 conductive layers, displays, sensors 570÷700 o C R/ - 20÷30 mΩ/ 

Silver polymer paste L-121 conductive layers on organic substrates 100÷150 o C R/ - 25÷50 mΩ/ 

Graphite polymer paste L-950 protection of silver layers 100÷150 o C protection from sulphur compounds 

More information is available from ITME, Thick-Film Materials Division: 

Tel.: (+48 22) 835 30 41 ext. 457; Fax: (+48 22) 864 54 96; Fax: (+48 22) 834 90 03 

Contact person: Małgorzata Jakubowska, Ph.D.; e-mail: maljakub@itme.edu.pl



Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 


Ultraviolet detectors built on GaN/AlGaN (1 of 2) 

UV photo-detector is built on gallium nitride (GaN). Absorption edge for this semiconductor, corresponds to the 

wavelength of 365 nm. Detector exhibits high sensitivity only in the UV range without applying expensive optical 

filters. Sensitivity is 3 orders of magnitude lower for the visible light. 

GaN detector can be applied in many fields due to its unique properties. 

Applications: 

Characteristics: 

‣ flammability tests – combustion process analysis 

‣ the sky radiation analysis 

‣ “ozone hole” detection 

‣ environmental contaminations monitoring 

‣ missile launch detection 

‣ gun fire detection 

‣ antiaircraft missile guidance systems 

‣ UV sources tests for sterilization monitoring. 

‣ research applications 

Type: 

Spectrum range 1) Responsivity 2) 

Contrast 3) Dark current 4) 

[nm] 

[A/W] 

[nA] 

Diode p-i-n UVA 320-365 0,15(λ 0 =350nm) >10 3 10 3 1.5x10 12 cm Hz 1/2 W -1 

Package TS-60 

(plastic type with a window made of sapphire) 


Tel.: (+48 22) 834 97 14, (+48 22); 835 30 41 ext. 403 

Fax: (+48 22 ) 864 54 96; Fax/: (+48 22) 834 90 03, 

Contact person: Lech Dobrzański, Ph.D. 

e-mail:dobrza_l@itme.edu.pl



Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 


Ultraviolet detectors built on GaN/AlGaN (2 of 2) 

UV photo-detector is built on gallium nitride (GaN). Absorption edge for this semiconductor, corresponds to the 

wavelength of 365 nm. Detector exhibits high sensitivity only in the UV range without applying expensive optical 

filters. Sensitivity is 3 orders of magnitude lower for the visible light. 

GaN detector can be applied in many fields due to its unique properties. 

Applications: 


‣ flammability tests – combustion process analysis 

‣ the sky radiation analysis 

‣ “ozone hole” detection 

‣ environmental contaminations monitoring 

‣ missile launch detection 

‣ gun fire detection 

‣ antiaircraft missile guidance systems 

‣ UV sources tests for sterilization monitoring. 

‣ research applications 

Typ: 

Spectrum range 1) Responsivity 2) 

Contrast 3) Dark current 4) 

[nm] 

[A/W] 

[nA] 

Dioda Schottky UVB 200-320 0,1(λ 0 =285nm) >10 3 10 2 10 3 2x10 11 cm Hz 1/2 W -1 

Package T34 

(metal cup with a quartz window) 


Tel.: (+48 22) 834 97 14, (+48 22); 835 30 41 ext. 403 

Fax: (+48 22 ) 864 54 96; Fax/: (+48 22) 834 90 03, 

Contact person: Lech Dobrzański, Ph.D.



Tel.: centr. (+48 22) 835 30 41÷ 49, Fax: (+48 22 ) 864 54 96 



Technology 

X-rays and α - particles detectors on GaAs 

We build volume type of devices whitch are fully depleted Schottky diode chips. Diode 

material is semiinsulating GaAs with terminals made of Au/Ge/Ni/Au and Cr/Au metallization. 

Design and operation 

Diode is not planar. Terminals are on the oposite side of chip which is 100 μm thick. Chip 

size is 1,32 x 1,32 mm. At ~ 500V bias, chip is fully depleted. 

Pulse height spectrum taken in vacuum at room 

temperature for triple source 239 Pu, 241 Am, 244 Cm of 

α-particles with energies 5,155 MeV, 5,486 MeV and 

5,805 MeV. Detector irradiated from the back contact. 

X-rays room temperature measurment. Low energy 

peak corresponds to 16,2 keV average energy, which 

was obtained by superposition of 241 Am X-rays with 

energies 18,8 keV and 13,9 keV. High energy peak 

corresponds to 241 Am γ - rays of energy 59,5 keV. 

Performance 

Dark current 

Charge collection efficiency 

Energy resolution (α - particles) 

Energy resolution (γ 59,5 keV ) 

I R (U R = 500 V) ≈ 10 nA 

CCE ( 241 Am 5,86 MeV) = 94% ; U R = 500V 

< 1,8 % at FWHM 

10,3 % at FWHM 


Tel.: (+48 22) 834 99 46; (+48 22) 835 30 41 ext. 111, 112, 412, 

Fax: (+48 22 ) 864 54 96; Fax/Tel.: (+48 22) 834 90 03 


e-mail: dobrza_l@itme.edu.pl






LASER DIODE 810 nm 1.5W 


DBSCH SQW gain guiding structure 

GaAsP/AlGaAs/GaAs 

Emission wavelength: 800 - 815 nm 

Nominal optical power: 1.5 W CW 

Max. reverse voltage: 2V 

Polarization: TM 

Operating temperature (CW): 5 to 55°C 

Storage temperature: 0 to 75°C 

R 0.5 

0.7 

1 

2 

3 

Ø 9.0 ±0.025 

2.54 

1.27 

Ø 6.2 ±0.1 

Ø 3.0 ±0.1 3.4 3.65.1 

8 ±0.8 

Ø 0.48 

1. laser diode cathode 

2. laser diode anode 

3. ---------------- 

Optical and electrical properties (T=20°C) 

normalized optical power 

optical power P [W] 

1.5 

1.0 

0.5 

0.0 

0.0 0.5 1.0 1.5 

spectral 

characteristics 

I = 1.6 A 

T = 16 o C 

I = 1.6 A 

T = 18 o C 

U 

P 

diode current 

805 806 807 808 809 810 811 

λ [nm] 

normalized intensity 

T case = 18 o C 

[A] 

1.0 

0.8 

0.6 

0.4 

0.2 

3.0 

2.5 

2.0 

1.5 

1.0 

0.5 

0.0 

directional 


P = 1 W 

FWHM 

voltage U [V] 

Θ II 

= 6 o 

0.0 

-30 -20 -10 0 10 20 30 

angle from normal 

Θ ⊥ 

= 16 o 

[deg] 

symbol min. typical max. meas. conditions 

laser emission wavelength [nm] λ 800 815 P 0 = 1.5 W 

threshold current [A] I th 0.35 0.4 0.42 

operating current [A] I op 1.7 P 0 = 1.5 W 

nominal voltage [V] U op 2.1 P 0 = 1.5 W 

slope efficiency [W/A] η 0.9 1.1 

emitting surface [μm × μm] 

1 (⊥) × 100 (II) 

beam divergence || [°] θ || 5 6 7 P 0 = 1.5 W 

beam divergence ⊥ [°] θ ⊥ 15 16 17 P 0 = 1.5 W 


Tel.: (+48 22) 835 30 41 ext.104; Fax (+48 22) 864 54 96, 

Contact person: Andrzej Maląg, Ph.D. 

e-mail:amalag@itme.edu.pl






LASER DIODE 810 nm 3W 


DBSCH SQW gain guiding structure 

GaAsP/AlGaAs/GaAs 

Emission wavelength: 800 - 815 nm 

Nominal optical power: 3 W CW 

Max. reverse voltage: 2V 

Polarization: TM 

Operating temperature (CW): 5 to 55°C 

Storage temperature: 0 to 75°C 

optical power P [W] 

3 

2 

U 

1 

P 

T case = 18 o C 

0 

0 

0 1 2 3 4 

diode current [A] 

3 

2 

1 

voltage U [V] 

1.0 

0.8 

P = 2 W 

I = 1 A 

I = 2 A 

I = 3 A 


0.6 

0.4 

0.2 

FWHM 

Θ ⊥ 

= 16 o 

Θ II 

= 11 o 


T=18 o C 

spectral 


0.0 

-30 -20 -10 0 10 20 30 

Θ (from normal) [deg] 

directional 


802 803 804 805 806 807 808 809 810 

λ [nm] 

Optical and electrical properties (T=20°C) 

symbol min. typical max. meas. conditions 

laser emission wavelength [nm] λ 805 815 P 0 = 2.5 W 

threshold current [A] I th 0.7 0.8 0.9 

nominal current [A] I op 3.5 4 P 0 = 3 W 

nominal voltage [V] U op 2 2.1 P 0 = 3 W 

slope efficiency [W/A] η 0.9 1.1 

emitting surface [μm × μm] 

1 (⊥) × 200 (II) 

beam divergence || [°] θ || 10 11 13 P 0 = 2 W 

beam divergence ⊥ [°] θ ⊥ 15 16 17 P 0 = 2 W 


Tel.: (+48 22) 835 30 41 ext.104; Fax (+48 22) 864 54 96, 

Contact person: Andrzej Maląg, Ph.D. 

e-mail:amalag@itme.edu.pl






InGaAs/InP PIN photodiode for 1.5μm band 

The photodiode has a planar structure made of InGaAs/InP, which 

is encapsulated in a glass windowed TO-18 package. The PIN 

junction is passivated with a silicon nitride film and the 

photosensitive area is coated with a selective antireflection film, 

which narrows spectral response to the 1.5 μm band. 

The devices are intended for use in conjunction with 1.5 μm lasers, 

for example in laser rangefinder systems. 

Absolute maximum ratings 

Parameter Symbol Value Unit 

Reverse voltage V R 20 V 

Reverse current I R 100 μA 

Operating temperature T opr -40 ÷+50 ºC 

Storage temperature T stg -40 ÷+70 ºC 

Electrical and optical characteristics (T =25ºC) 

Value 

Parameter Symbol 

Unit 

Min. Typ. Max. 

Active area (diameter) Φ 0.3 mm 

Test 

conditions 

Spectral response range Δλ 1.3 to 1.7 μm 10 % of max. value 

Responsivity R 0.8 A/W λ = 1.5 μm, U R = 5 V 

Dark current I R0 2 nA U R = 5 V 

Detectivity D* 1.4·10 12 cm·Hz 1/2 /W λ = 1.5 μm, U R = 5 V 

Capacitance C t 6 pF U R = 5 V 

Rise and fall times 

t r 

2 

t f 2 

ns 

ns 

λ = 1.5 μm, 

U R = 5 V, R L =50Ω 


Tel.: (+48 22) 835 30 41 ext.465; Fax (+48 22) 864 54 96, 

Contact person: Zynek Jadwiga, Ph.D. 

e-mail: jadwiga.zynek@itme.edu.pl






InGaAs/InP RCE photodiodes for 1.94μm and 2.06μm band 

These resonant cavity enhanced (RCE) photodiodes contain inside the 

resonant cavity an InP based PIN junction with a strained InGaAs 

quantum well as the absorbing region. The planar photodiode 

structures are passivated with silicon nitride films and are 

encapsulated in glass windowed TO-18 packages. Due to very low 

dark currents they achieve high detectivity values. 

The photodiodes designed for detection at 1.94 μm are intended for 

use in conjunction with 1.94 μm lasers, for example in moisture 

content meters, the photodiodes designed for detection at 2.06 μm are 

intended for use in conjunction with holmium doped 2.06 μm lasers, 

for example in laser rangefinder systems operating at eye safe 

wavelengths. 

Photodiodes detecting in other bands over the 1.8 ÷ 2.06 μm range are 

also available. 

Electrical and optical characteristics (T =25ºC) 

Parameter Band Symbol 

Value 

Typ. Max. 

Unit 

Active area (diameter) Φ 0.3 mm 

Test 

conditions 

Spectral response range 

Responsivity 

1.94 μm 

Δλ 

1.87 to 1.97 

μm 10 % of max. value 

2.06 μm 

1.99 to 2.1 

1.94 μm 0.3 λ = 1.94 μm, U R = 2 V 

R 

A/W 

2.06 μm 

0.2 

λ = 2.06 μm, U R = 2 V 

Dark current 

1.94 μm 

I R0 

40 200 

2.06 μm 

150 400 

pA 

U R = 2 V 

Detectivity 

1.94 μm 2·10 12 λ = 1.94 μm, U R = 2 V 

D* 

cm·Hz 1/2 /W 

2.06 μm 

8·10 11 λ = 2.06 μm, U R = 2 V 

Capacitance 

Rise and fall times 

1.94 μm 

2.06 μm 

1.94 μm 

2.06 μm 

C t 6 pF U R = 2 V 

t r 

t f 

2 

2 

ns 

λ = 1.94 μm, U R = 2 V, 

R L = 50 Ω 

λ = 2.06 μm, U R = 2 V, 

R L = 50 Ω 


Tel.: (+48 22) 835 30 41 ext.465; Fax (+48 22) 864 54 96, 

Contact person: Zynek Jadwiga, Ph.D. 

e-mail: jadwiga.zynek@itme.edu.pl



Tel.: centr. (+48 22) 835 30 41÷ 49, Tel/ (+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 



Mask shop at ITME 

Since 1991, ITME offers the advanced technology of submicron 

lithography. We use the electron-beam exposure system ZBA-20 (from 

Zeiss Jena) for generation of the mask pattern. ZBA-20 operation is 

founded on the variable-shape beam and the vector-scan principle and this 

concept compared to the gaussian round beam yields higher productivity. 

Due to this advantage we use successfully ZBA-20 in the two fields of 

applications: 

‣ production of master masks and reticles for contact, proximity and 

projection lithography, especially for the large-area structures, like 

detectors of the nuclear radiation or the SAW devices, 

‣ direct exposition of semiconductor wafers, especially for use in the 

sub-micrometer range (for the microwave integrated circuits). 

We have experience in the micro-strip detectors of very large area that are 

needed in high-energy physics. Sometimes we recommend our customers 

the direct writing on the detector substrates to avoid problems during the 

transfer of pattern from mask to the substrate as the large areas of exactly 

contacting surfaces are hard to separate after the exposition. 

Using e-beam technology we provide chromium masks with 

critical dimension (minimum linewidth) of 0,5μm. Pattern with minimum 

feature size of 0,2μm can be fabricated by the method of direct writing. 

The detailed specification of our services is presented in Table 1. 

Table 1. The specification of products and services. 

Fig.1. A sensor of the infrared radiation 

– structure of the surface machined 

silicon bolometer. 

Fig.2. Split gate 0,07μm. lift-off 

metallization Au/Cr 0,1μm. 

CHROMIUM MASKS 

DIRECT WRITING ON WAFERS 

substrate size 4"x4",5"x5",6"x6",7”x7” diameters 2", 2.5", 3", 4", 5", 6" 

chip size 

any size up to 150 mm x 150 mm 

position resolution 0.1 μm 0.1μm 

minimum linewidth 0.5 μm 0.2μm 

overlay accuracy 

data format 

≤ 0.3 μm 

(all levels of one set) 

0.15 μm 

(wafers with alignment marks) 

DASY, CIF, D. MANN 3000, D. MANN 3600, DXF (AutoCAD) 

High resolution, short exposition time and low cost of prototyping 

process make direct writing method the most suitable tool for R&D works. 

This technique in combination with multilayer resist systems and lift-off 

process enables produtien of special kind of structures, like T-shaped 

FET’s gates, diffraction gratings or computer generated holograms. 

Fig.3. Standard rectangular FET’s gate 

0,5μm. lift-off metallization Au/Cr 

0,4μm. 


Tel.: (+48 22) 834 97 14, (+48 22); 835 30 41 ext. 403 

Fax: (+48 22 ) 864 54 96; Fax/: (+48 22) 834 90 03, 


e-mail:dobrza_l@itme.edu.pl 

Fig.4. The 0,2μm. foot-print T-shaped gate 

formed by double-layer resist system.






Diffractive Optical Elements obtained using electron-beam 

writer and reactive ion etching 

Among various kinds of micro-optical elements, diffractive optical elements are 

especially attractive because of their functional flexibility in handling wave-front conversion. 

They are suitable for wide range of research, industrial and comercial applications, because of 

their planar, compact and lightweight nature. 

We offer fabrication of 8-level Diffractive Optical Elements (DOEs) with submicrometer 

feature sizes in the 3-step lithographic process. In each step a variable-shape e-beam 

exposure system is used for writing the pattern that is transferred into substrate by reactive ion 

etching and forms the phase profile. Using this technology different kind of DOEs, including 

rectangular-aperture micro-Fresnel lens arrays and diffraction gratings were realized on quartz, 

GaAs and Si wafers. The diffraction efficiencies of these elements were up to 92%. The lens 

arrays showed uniform focusing characteristics, and each lens exhibited a good quality of the 

focused wave front. 

SEM photographs of the 8-level Fresnel microlenses 

a) b) 

Fragment of the rectangular-aperture Central part of the microlens f / 5.1 (quartz) 

microlens array f / 3 (GaAs) 

Cross section of the microlens f / 3 (GaAs) 

c) 

We succeded in fabrication of holograms using e-beam direct writing technique. Patterns 

of holograms were digitally generated. This aproach enables production of secure marks which 

cannot be replicated using optical methods. 


Tel.: (+48 22) 834 99 46; (+48 22) 835 30 41 ext. 417, 132 

Fax: (+48 22 ) 864 54 96; Fax/Tel.: (+48 22) 834 90 03 

Contact person: Andrzej Kowalik Ph.D. 

e-mail: akowalik@itme.edu.pl






Double-Sided Diffractive Optical Elements 

Diffractive optical elements offer an interesting alternative in comparison with more conventional optical 

elements because they can perform more complex transfer functions and, thanks to their planar, compact 

and lightweight nature, better fulfill requirements of miniaturization and integration with micro-electromechanical 

devices. However, elements of high optical performance, i.e. large angle aperture (or 

numerical aperture NA) and high diffraction efficiency, demand multilevel phase profiles with an 

extremely high spatial frequency. That involves complicated design methods based on a rigorous 

diffraction theory and fabricating technology with sub-wavelength resolution and nanometer accuracy. To 

overcome these difficulties we propose a transmission DOE, which optical function is divided between 

two diffractive surfaces fabricated at the opposite sides of a substrate (2SDOE). The main advantage of 

such a solution lies in the fact that each of the diffractive patterns has smaller spatial frequency and, 

therefore, can be made with more phase levels. In result, a monolithic diffractive system can be achieved 

with a higher diffraction efficiency or larger NA using the microlithographic technology of the same 

minimal feature size. 

General principle 

− optical function divided between 2 diffractive 

profiles placed on both sides of the substrate 

− each profile with variable number of phase 

levels 

Focusing characteristic 

of the eight-phase-level DOEs with 

the same minimal feature size cd 

(microlenses fabricated on quartz 

substrate) 

Standard DOE 2SDOE 

CCD camera image of the focal spot pattern 

A scheme of the double-sided diffractive optical 

element with variable number of the phase steps; 

cd denotes the critical dimension of the element, 

i.e. width of the smallest detail possible to obtain. 

light intensity distribution 


Tel. (+48 22) 835 30 41 ext. 417, Fax: (+48 22 ) 864 54 96; 

Contact person: Andrzej Kowalik Ph.D. 

e-mail: akowalik@itme.edu.pl






DIFFRACTIVE BEAM CONCENTRATOR 

FOR LASER DIODE BARS 

Type of optical element: 

lens array 

array of multilevel rectangular-apertured elliptical diffractive 

microlenses 


laser diode bar 

− compact and lightweight optical element suitable for 

integration with a laser-diode bar, 

− regular (square or rectangular) cross-section of the spot, 

− uniform light distribution due to the collective character of beams 

transformation, 

− efficiency up to 85% (depending on laser-diodes properties). 

10 mm 

Laser-diode bar in a standard 

package equipped with the 

diffractive beam concentrator 

laser diode bar 

lens array 

scheme of laser diode bar beams transformation 

outer fragment of the binary rectangularapertured 

elliptical lens array [32x1] 


Tel.: (+48 22) 835 30 41 ext.417; Fax (+48 22) 864 54 96, 

Contact person: Andrzej Kowalik, Ph.D. 

e-mail:akowalik@itme.edu.pl






Kinoform Sampling Filter 

Kinoform sampling filter is a new optical element which has the same optical properties as those of 

the amplitude sampling filter but can use theoretically all the incident light for multiple image formation. 

Generally the filter corresponds to a square array of high ‘compressed’ lenses, i.e. lenses with effective 

apertures much greater than the period of the array (effect not available in classical arrangements with 

real lenses). Therefore the kinoform filter seems to be an excellent tool for a simple method of fabrication 

of two-dimensional arrays of periodical objects. 

Advantages: 

− compact optical element allowing to generate large arrays of periodical objects (e.g. 100x100), 

− high diffraction efficiency (over 90%), 

− much higher resolution than in case of an equivalent array of classical elements, 

− high uniformity of multiple images, 

− immaterial influence of local defects on the quality of output images due to the complex, diffractiveinterferometric 

formation of images. 

Microscope image (x1000) of the fragment 

of the quartz kinoform sampling filter 

basic data 

aperture 40x40 mm2, 

spatial period d=0.2 mm, 

minimal element 2x2 μm 2 , 

8 phase levels, 

wavelength of light λ=632.8 nm. 

Magnified fragment of the image of periodical objects 

formed by the kinoform sampling filter (λ=632.8 nm) 

optical properties 

optical element equivalent to an array of 200x200 

lenses with the aperture 39.6 mm and the focal length 

62.6 mm 

resolution 2 μm (for a classical lens array 198 μm), 

diffraction efficiency 91%, 

uniformity of multiple images better than 5% 


Tel.: (+48 22) 835 30 41 ext.417; Fax (+48 22) 864 54 96, 

Contact person: Andrzej Kowalik, Ph.D. 

e-mail:akowalik@itme.edu.pl






SAW FILTERS and COMPONENTS 

for SENSORS 

Surface acoustic wave (SAW) filters are manufactured by ITME for TV receivers 

(tables 1 and 2). 

We offer also: - SAW filters for cable TV modulators (table 3), 

- professional SAW filters (table 4), 

- SAW notch filters (table 5), 

- SAW, pseudo SAW (PSAW) and surface transverse wave (STW) 

components for sensors: delay line (table 6), resonators (table 7). 

ITME offers high quality SAW filters and components for sensors in the frequency range 

20÷500 MHz designed according to customers requirements. 

SAW FILTER CHARACTERISTICS : 

‣ center frequency * 

- 20 ÷ 500 MHz, 

‣ fractional badwidth - 1 ÷ 50 %, 

‣ insertion loss 

- ≥ 2 dB, 

‣ relative out-of-band rejection - as much as 60 dB, 

‣ minimum shape factor - 1.05, 

‣ minimum bandpass ripple - ± 0.1 dB, 

‣ phase response * * 

- linear / nonlinear. 

NOTES : 

* Design of multiple passband filters with various passband shapes is possible. 

** Filters can be designed according to phase or group delay specification. 

WE OFFER THE FOLLOWING SERVICES CONCERNING SAW SENSORS : 

⎣ design and manufacturing of SAW delay lines and resonators on quartz and 

lithium niobate and lithium tantalate substrates of any cut, 

⎣ preparation copper phthalocyanine layers as the chemical interface for sensors. 

OUR CUSTOMERS ARE ASKED TO SPECIFY: 

‣ desired frequency response, 

‣ max. insertion loss, 

‣ source and load impedance, 

‣ package type, 

‣ temperature range of operation, 

‣ max. permitted temperature coefficient of the frequency response, 

‣ expected quantity.

Filter type 

Table 1. SAW filters for TV receivers with differential sound carrier system. 

Picture carrier 

[ MHz ] 

Insertion loss 

[dB] 

Sound carrier 

[ MHz ] 

TV Standard *) 

Replecement to 

(Siemens - Matsushita) 

FT-383 38.0 20 31.5 / 32.5 

D/K-OIRT, 

B/G-CCIR OFWK-1950 

FT-389 38.9 20 32.4 / 33.4 

D/K-OIRT, 


FT-3893 38.9 19 33.4 B/G-CCIR OFWG-1968 

FT-3895 38.9 18,5 32.4 / 33.4 

D/K-OIRT, 


FT-3896 38.9 18,5 32.4 / 33.4 

D/K-OIRT, 


FT-3897 38.9 17 32.4 / 33.4 B/G-CCIR OFWG-1963 

FT-3899 38.9 17 33.4 B/G-CCIR OFWG-1984 

FT-3951 39.5 18 33.5 I-CCIR OFWJ-1951 

FT-3955 39.5 16 33.5 I-CCIR OFWJ-1951 

Table 2. SAW filters for TV receivers with quasiparallel sound carrier system. 

Filter type 

Picture carrier 

[ MHz ] 

Insertion loss 

[dB] 

Sound carrier 

[ MHz ] 

FTQW-384 38.0 20 31.5 / 32.5 

FTQW-3801 38.0 20 31.5 

FTQW-3805 38.0 17 31.5 / 32.5 

FTQW-3806 38.0 17 31.5 / 32.5 

FTQW-3891 38.9 20 32.4 / 33.4 

FTQW-3893 38.9 17 33.4 

FTQF-384 38.0 26 31.5 / 32.5 

FTQF-3801 - 15,5 31.5 / 32.5 

FTQF-3804 - 15,5 31.5 / 32.5 

FTQF-3806 38.0 22 31.5 / 32.5 

FTQF-3891 - 15,5 32.4 / 33.4 

FTQF-3894 - 21 32.4 / 33.4 

FTQF-3895 38.9 26 32.4 / 33.4 

FTQF-3897 38.9 22 

FTQF-3899 38.9 22 

FTQW-384, 

FTQF-384 

FTQW-3801, 

FTQF-384 

FTQW-3801, 

FTQF-3801 

FTQW-3806, 

FTQF-3804 

FTQW-3806, 

FTQF-3806 

FTQW-3891, 

FTQF-3891 

FTQW-3891, 

FTQF-3895 

32.9 / 33.05 / 

33.4 

32.35 / 32.9 / 

33.4 

38.0 - 31.5 / 32.5 

38.0 - 31.5 / 32.5 

38.0 - 31.5 / 32.5 

38.0 - 31.5 / 32.5 

38.0 - 31.5 / 32.5 

38.9 - 32.4 / 33.4 

38.9 - 32.4 / 33.4 

TV Standard *) Replecement to 

(Siemens - Matsushita) 

D/K-OIRT, 


D/K-OIRT, 

B/G-CCIR - 

D/K-OIRT, 


D/K-OIRT, 

B/G-CCIR - 

D/K-OIRT, 

B/G-CCIR OFWG-3956 

B/G-CCIR 

OFWG-3962 

D/K-OIRT, 


D/K-OIRT, 

B/G-CCIR - 

D/K-OIRT, 

B/G-CCIR - 

D/K-OIRT, 


D/K-OIRT, 


B/G-CCIR, 

D/K-OIRT OFWK-3258 

D/K-OIRT, 


B/G-CCIR, 

NICAM OFWG-9251 

D/K-OIRT, 

B/G-CCIR, I 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

D/K-OIRT, 

B/G-CCIR 

OFWK-9260 

OFWK-3254 

OFWK-3264 

OFWK-3351 

OFWK-3351 

OFWK-3264 

OFWK-3350 

OFWK-3258

Type 

FP-3507 

FP-3606 

FTP-3801 

FP-3607 

FP-3608 

FP-4001 

FP-4002 

Table 3. SAW filters for cable TV modulators. 

Center 

frequency 

[MHz] 

35,0 

35,4 

35,0 

36,0 

Insertion 

loss [dB] 

26 

26 

33,5 

34 

32 

13 

20 

1 dB 

bandwidth 

[MHz] 

6,5 

6,0 

33,5 

7,5 

8,0 

0,8 

- 

3 dB 

bandwidth 

[MHz] 

- 

- 

- 

- 

- 

- 

0,45 

40,0 

39,8 

*) B/G: CCIR, Germany, Europe 

D/K: OIRT, eastern standard 

L: France 

I: Great Britain 

Table 4. Professional SAW filters. 

Standard* ) 

D/K 

D/K 

D/K 

L 

I 

B/G 

Package 

TS-58 

TS-58 

PCZ-24 

PCZ-14 

TS-59 

TS-59 

TS-58 

Type 

Center 

frequency 

[MHz] 

Insertion 

loss [dB] 

1 dB 

bandwidth 

[MHz] 

3 dB 

bandwidth 

[MHz] 

Package 

FP-3557 35,7 22 7,5 - TS-59M 

FT-3892 36,5 21 6,5 - TS-59M 

FP-4301 43,2 21 - min. 1,8 TS-59M 

FP-6008 60,0 18 - min. 8,0 DIL-14 

FP-7005 

FP-7010A1 

FP-7010A2 

FP-7010A3 

FP-7014 

FP-7030C 

FP-7030E 

70,0 

26 

20 

20 

20 

26 

30 

33 

5 

10 

10 

12 

14 

- 

- 

- 

- 

- 

- 

- 

30 

30 

PCZ-14 

PCZ-14 

PCZ-14 

DIL -14 

PCZ-14 

PCZ-14 

PCZ-14 

FA-1647 164,465 1,5 - 0,14 DIL-14 

Frequency f p 

[MHz] 

Attenuation at 

frequency f p [dB] 

Table 5. Notch filters 

Bandwith 

[kHz] 

Metal package 

[mm] 

100÷500 ≥ 40dB ≥ 35 60x27x19 

Table 6. SAW, PSAW and STW delay lines 

Type 

Center 

frequency 

[MHz] 

DL165 DL267 DL313 DL506 DL701 DL702 DL741 DL742 DL801 DL802 

~165 ~267 ~313 ~506 ~70 ~70 ~74,5 ~74,5 ~80 ~80 

Table 7. SAW and PSAW resonators 

Type RS164 RS303 RS357 RS423 RS434 RS512 RS701 RS702 

Center 

frequency 

[MHz] 

~164 ~303 ~357 ~423 ~434 ~512,5 ~70,3 ~70,3 


Tel.: (+48 22) 835 30 41; Fax: (+48 22) 834 90 03; Fax: (48 22 ) 864 54 96 


Waldemar Soluch, Prof.DSc. Tel.: (+48 22) 835 30 41 ext. 121 

e-mail: soluch_w@itme.edu.pl


APPLICATION 


Tel.: (+48 22) 835 30 41, Tel.:(+48 22) 834 90 03, Fax: (+48 22 ) 864 54 96 


ITS-90 Fixed–Point Sealed Cells of metals 

as temperature standards 

ITME’s Metal Fixed- Point Sealed Cells frequent use, are designed for realizing ITS – 90 temperature scale. 

Metal freeze – point cells are very close to the theoretical freezing temperature and provide plateaus that 

are both stable and long lasting. 

Fixed-Point Cells are used by national temperature labs, by owners of a reference thermometers to 

comparison – calibrate industrial thermometers and testing devices for temperature measurements. 

SPECIFICATION 

A – Graphite crucible 

B – High-Purity metal 

C – Sealed quartz envelope 

D – Measurement cavity 

Metal 

Nominal Temperature 

Values [ o C] 

Freezing time – “plateau” 

[hour] 

Downgrade of “plateau” 

(15% ÷ 85% freezing 

time range) [mK] 

Cell uncertainty 

[mK] 

Indium (In) 156,5985 4,5 0,12 0,2 

Tin (Sn) 231,928 6,0 0,15 0,2 

Zinc (Zn) 419,527 7,0 0,20 0,2 

Aluminum (Al) 660,323 10,0 0,20 0,5 

Silver (Ag) 961,78 10,0 1,00 1,0 

CHARACTERISTIC 

ITME’s cells are carefully constructed in our state-of the-art lab, using high density, high-purity graphite 

crucibles containing high purity metal samples. The crucible is enclosed within a sealed quartz glass 

envelope that is evacuated and back-filled with high-purity argon gas under pressure 1013,25hPa. 

Metal Fixed – Point Cells datas are attestated by Polish Central Office of Measures in document called a 

calibration certifciate. 


Tel.: (+48 22) 834 91 86; (+48 22) 835 30 41 ext. 170, 430 

Fax: (+48 22 ) 864 54 96; Fax: (+48 22) 834 90 03 








LABORATORY OF CHARACTERISATION 

OF HIGH PURITY MATERIALS 

SCOPE OF OPERATION: 

• Design and elaboration of analytical methods (also wellsuited to 

environmental protection needs) 

• Analysis of chemical composition of inorganic materials, 

• Trace analysis of high purity materials, semiconductor materials, ceramics, optical and technical glasses, 

complex alloys, composits 

• Environmental analysis 

• Improvement well-known and practical application new instrumental techniques 

SCOPE OF ACCREDITATION 

Material: 

* Water and 

Wastewater 

* Air on the work 

place 

Trace elements: 

Cr, Cu, Pb, Zn, Cd, Fe, Na, K, As, Mn, Ni, Mg, (0,1÷1000 ppm) 

AsH 3 , PH 3 , NO x 

The LABORATORY is providing services covering: 

• trace analysis of high purity materials ( metals, oxides, nitrides) 

• analysis of materials for 

optoelectronic:GaN, SiC 

piezoelectronics: LiNbO 3 , LiTaO 3 , LiB 4 O 7 , quartz; GdCa 4 O(BO 3 ) 3, NdCa 4 O(BO 3 ) 3 

laser techniques: YAG: Nd,Er,Ho,Tm,Pr; Yb; Yb 3 Al 5 O 12 : (YbAG):Er; YVO 4 :Ho,Yb,Er,Tm; La 3 La 2 Ga 3 O 12 :Cr; 

Sr 3 Y(BO) 3 (BOYS):Yb; Sr x Ba 1-x Nb 2 O 6 (SBN):Ce 

aluminate scintillators: LuAlO 3 (LuAP):Pr,Cr,Mo 

optics: CaF 2 , BaF 2 , LiF, LiYF 4 : Pr,Ho,Tm,Pr; 

superconductivity materials: SrLaAlO 4 , SrLaGaO 4 , SrLaGa 3 O 7 :Ho; 

different kinds of optical and technical glasses; 

• analysis of ceramics; 

• analysis of rare earth elements 

• analysis water and wastewater; environmental materials; air 

Laboratory carries out analysis using modern instrumental techniques (FAAS, GFAAS, ICP-AES, UV-VIS) 

and classical chemistry 

LABORATORY has CERTYFICATE OF TESTING LABORATORY ACCREDITATION Nr AB 267 issued by 

Polish Centre for Accreditation. Laboratory is in conformance with the standard PN-EN ISO/IEC 17025:2005 

Scope of accreditation: determination of impurities in water and wastewater, AsH 3 , PH 3 , NO x in air at work place 


Tel.: (+48 22) 835 30 41 ext. 140, 481, 

Fax.: (+48 22) 834 90 03, fax.: (48 22 ) 864 54 96 

Contact person: Wanda Sokołowska, 

Ph.D./Eng. / e-mail: sokolo_w@itme.edu.pl

CATALOGUE 2010 - ITME

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?