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doi:10.1595/147106711X570398<br />

•<strong>Platinum</strong> <strong>Metals</strong> Rev., 2011, 55, (2)•<br />

<strong>Platinum</strong> Apparatus for Producing Glass<br />

Nippon Electric Glass Co Ltd, Japanese Appl. 2010-228,942<br />

Glass manufacturing apparatus which reduces the<br />

formation of bubbles in optical or display glass is<br />

claimed. A dry coating containing a glass powder and<br />

a ceramic powder is formed on the outer surface of a<br />

Pt container. The coated Pt container is then surrounded<br />

by a refractory layer containing >97 wt%<br />

Al 2 O 3 and SiO 2 and fired.<br />

MEDICAL AND DENTAL<br />

Ruthenium Compounds for Treating Cancer<br />

Univ. Strasbourg, World Appl. 2011/001,109<br />

Ru compounds for treating proliferative diseases, in<br />

particular cancer, are claimed, together with pharmaceutical<br />

compositions containing the same. Preferred<br />

compounds include 1 and 2.<br />

ELECTRICAL AND ELECTRONICS<br />

World Appl. 2011/001,109<br />

Gas Discharge Lamp with Iridium Electrode<br />

Koninklijke Philips Electronics NV, US Appl. 2010/0,301,746<br />

A gas discharge lamp includes a gas discharge vessel<br />

filled with S, Se, Te or a compound thereof and an<br />

electrode assembly in which the electron-emissive<br />

material is 80–100 wt% Ir optionally alloyed with Ru,<br />

Os, Rh, Pd or Pt. The Ir-based electrode has a high<br />

melting point and resists chemical reaction with the<br />

gas filling, providing a long-lived, efficient, compact<br />

and high intensity white light source for applications<br />

such as general and professional illumination.<br />

O<br />

O<br />

N<br />

N<br />

Ru<br />

N<br />

N<br />

N<br />

+<br />

–<br />

PF 6<br />

1<br />

+<br />

Integrated Rhodium Contacts<br />

IBM Corp, US Patent 7,843,067 (2010)<br />

A microelectronic structure contains an interconnect<br />

barrier layer of Ta, Ti, W, Mo or their nitrides, between<br />

a Rh contact structure and a Cu interconnect structure.<br />

Interdiffusion between Rh and Cu is prevented<br />

and low resistance in microelectronic devices can be<br />

achieved.<br />

N<br />

N<br />

Ru<br />

N<br />

N<br />

N<br />

–<br />

PF 6<br />

2<br />

148 © 2011 Johnson Matthey

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