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simulation of a superheterodyne receiver using pspice - School of ...

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The BJT used in the IF amplifier is the same as that used in RF amplifier and will use<br />

the same formulae for its dc conditions.<br />

β<br />

DC<br />

(i.e. dc current gain <strong>of</strong> the transistor) <strong>using</strong> current values from Pspice:<br />

β<br />

DC<br />

=<br />

I<br />

I<br />

C<br />

B<br />

3.23mA<br />

= = 20.1<br />

160.42uA<br />

This is a much smaller value than the corresponding value in the RF amplifier, but it<br />

is still an acceptable value.<br />

α<br />

DC<br />

=<br />

I<br />

I<br />

C<br />

E<br />

3.23mA<br />

= = 0.995<br />

3.247mA<br />

This is the same as the RF amplifier.<br />

V<br />

V<br />

I<br />

B<br />

E<br />

E<br />

R2<br />

50k<br />

= VDD<br />

= 20V<br />

R1<br />

+ R2<br />

80k<br />

+ 50k<br />

= V −V<br />

= (7.7 − 0.7) V = 7V<br />

B<br />

V<br />

=<br />

R<br />

E<br />

E<br />

BE<br />

7V<br />

= = 3.5mA<br />

2kΩ<br />

= 7.7V<br />

Pspice gives values for the base and emitter voltages as 7.167V and 6.494V<br />

respectively and emitter current as 3.247mA.<br />

The internal resistance <strong>of</strong> the transistor:<br />

25mV<br />

r ' e = = 7. 14Ω<br />

I E<br />

The load resistance:<br />

−6<br />

L 210X10<br />

R = =<br />

= kΩ<br />

L −<br />

CR 582X10<br />

X 20<br />

18<br />

12<br />

S<br />

L1<br />

VO<br />

RL<br />

Voltage gain: A = = =<br />

C1Rs<br />

V<br />

= 2521<br />

V r'<br />

e r'<br />

e<br />

IN<br />

The voltage gain expressed in dBs: 20log(2521) = 68dB.<br />

Power gain = current gain X voltage gain = 20.1 X 2521 = 50672.<br />

Input Impedance <strong>of</strong> the transistor:<br />

VB<br />

7.167V<br />

RIN = = = 420kΩ<br />

I 17.08uA<br />

B<br />

R<br />

Total<br />

IN IN<br />

7<br />

= R1<br />

R2<br />

R = 80k<br />

50k<br />

420k<br />

= 28. kΩ<br />

Ref. [6] Appendix B<br />

26

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