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International Technology Roadmap for PV - PVMC

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ITR<strong>PV</strong> Results – Processes – <strong>Technology</strong> ( Cell 2)<br />

Cell front side (n-doped emitters ):<br />

- emitter sheet resistance increase is needed<br />

reduced FS J0 to below 100 fA/cm²<br />

enable contacting by new pasts and/or SE<br />

- Reduction of finger width w/o losses in<br />

conductivity down to 40µm<br />

screen printing improves<br />

new techniques <strong>for</strong> fine line print<br />

CoO has to be competitive<br />

- Improved alignment accuracy <strong>for</strong> SE,<br />

double printing and new cell concepts<br />

2nd Annual c-Si <strong>PV</strong>MC Workshop,<br />

10 July 2013, San Francisco, USA<br />

ITR<strong>PV</strong> 4 th Edition – Results 2012<br />

19

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