BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
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<strong>BJT</strong> <strong>Internal</strong> <strong>Capacitances</strong><br />
We can write<br />
Q<br />
F<br />
n<br />
is<br />
2<br />
W<br />
FiC<br />
Where<br />
F<br />
2Dn<br />
called as Forward base<br />
transient<br />
time<br />
Which is the average time a charge carrier (electron) spends in<br />
crossing the base (10ps to 100ps)<br />
۞For the small signals we can define the small signal diffusion<br />
capacitance C de ,<br />
C<br />
de<br />
dQ<br />
dv<br />
n<br />
BE<br />
F<br />
di<br />
dv<br />
C<br />
BE<br />
F<br />
g<br />
m<br />
F<br />
I<br />
V<br />
C<br />
T<br />
<strong>BITS</strong> <strong>Pilani</strong>, Dubai Campus
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