BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
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<strong>High</strong> frequency Hybrid-π<br />
model<br />
Emitter base capacitance<br />
(C de +C je )pfarads<br />
B<br />
Collector base<br />
capacitance<br />
<strong>Model</strong> resistance of<br />
silicon material of<br />
the base region ,<br />
between base B <strong>and</strong><br />
a fictitious internal<br />
or intrinsic, base<br />
terminal B’ (right<br />
under the emitter<br />
region)<br />
<strong>BITS</strong> <strong>Pilani</strong>, Dubai Campus
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