BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
BJT Internal Capacitances and High Frequency Model - BITS Pilani
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<strong>BJT</strong> <strong>Internal</strong> <strong>Capacitances</strong><br />
The Collector-Base Junction capacitance:<br />
In active mode collector base junction is reverse biased <strong>and</strong> its<br />
depletion capacitance<br />
CBJ Built in voltage<br />
(0.75V)<br />
C<br />
1<br />
C<br />
V<br />
V<br />
0<br />
CB<br />
0c<br />
m<br />
Value of C µ at zero<br />
voltage<br />
Grading coefficient of<br />
EBJ (0.2 to 0.5)<br />
<strong>BITS</strong> <strong>Pilani</strong>, Dubai Campus
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